Antireflection-coated blue GaN laser diodes in an external cavity and Doppler-free indium absorption spectroscopy

Commercially available GaN-based laser diodes were antireflection coated in our laboratory and operated in an external cavity in a Littrow configuration. A total tuning range of typically 4 nm and an optical output power of up to 30 mW were observed after optimization of the external cavity. The linewidth was measured with a beterodyne technique, and 0.8 MHz at a sweep time of 50 ms was obtained. The mode-hop-free tuning range was more than 50 GHz. We demonstrated the performance of the laser by detecting the saturated absorption spectrum of atomic indium at 410 nm, allowing observation of well-resolved Lamb dips.     

Measures of mixing in laminar flow

The general domain in which this work resides is that of mixing in creeping flows. Mixing, in this context, refers to the stretch of an interfacial line, or area in a strain field. The advancement of mixing technology is applied to the design of continuous mixers used in polymer processing. The geometric designs included single screw extruders, static motionless mixers, and co- and counter-rotating twin screw extruders. The co-rotating twin screw extruder was chosen to be studied in detail since it enjoys wide applications and, for which, little understanding of the contribution to mixing in the different screw geometries is known. In order to evaluate the rate of mixing for the non-uniform strain history flows, the method for measuring mixing had to be reexamined and broadened. An automated method has been developed which incorporates a digital camera and a computer to analyze the cross-sections of interest. Two measures of mixing—the correlation function and the distribution function—are developed to describe mixing in these regimes. These measures are applied successfully to the mixer geometries revealing subtle differences as to the nature of mixing in each.     

Control of Microstructure and Orientation in Solution-Deposited BaTiO3 and SrTiO3 Thin Films

Columnar and highly oriented (100) BaTiO₃ and SrTiO₃ thin films were prepared by a chelate-type chemical solution deposition (CSD) process by manipulation of film deposition conditions and seeded growth techniques. Randomly oriented columnar films were prepared on platinum-coated Si substrates by a multilayering process in which nucleation of the perovskite phase was restricted to the substrate or underlying layers by control of layer thickness. The columnar films displayed improvements in dielectric constant and dielectric loss compared to the fine-grain equiaxed films that typically result from CSD methods. Highly oriented BaTiO₃ and SrTiO₃ thin films were fabricated on LaAlO₃ by a seeded growth process that appeared to follow a standard "two-step" growth mechanism that has been previously reported. The film transformation process involved the bulk nucleation of BaTiO₃ throughout the film, followed by the consumption of this matrix by an epitaxial overgrowth process originating at the seed layer. Both BaTiO₃ and PbTiO₃ seed layers were effective in promoting the growth of highly oriented (100) BaTiO₃ films. Based on the various processing factors that can influence thin film microstructure, the decomposition pathway involving the formation of BaCO₃ and TiO₂ appeared to dictate thin film microstructural evolution.