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排序方式: 共有2282条查询结果,搜索用时 31 毫秒
1.
Tsuneaki Matsudaira Masashi Wada Naoki Kawashima Miyuki Takeuchi Daisaku Yokoe Takeharu Kato Masasuke Takata Satoshi Kitaoka 《Journal of the European Ceramic Society》2021,41(5):3150-3160
Mass transfer in polycrystalline Yb2SiO5 wafers with precise composition control was evaluated and analyzed by oxygen permeation experiments at high temperatures using an oxygen tracer. Oxygen permeation proceeded due to mutual grain boundary diffusion of oxide ions and Yb ions without synergistic effects such as acceleration or suppression. The oxygen shielding properties of Yb2SiO5 were compared with those of the other line compounds such as Yb2Si2O7 and Al2O3 based on the determined mass transfer parameters. It was found that the more preferentially an oxide ion diffuses in the grain boundary compared to the interior of the grain, the greater the effect of suppressing the movement of the oxide ion by applying an oxygen potential gradient becomes. 相似文献
2.
The present paper includes experimental and analytical data on the fracture properties of a nickel-iron superalloy, a ferromagnetic austenite, at 4 K in magnetic fields of 0 and 6 T. The tensile, notch tensile and small punch tests are employed. A finite element analysis is also performed to convert the experimentally measured load-displacement data into useful engineering information. To interpret the results we review the available theory of the influence of magnetic field on the stress intensity factor for a crack in ferromagnetic materials. 相似文献
3.
Nayve R. Fujii M. Fukugawa A. Takeuchi T. Murata M. Yamada Y. Koyanagi M. 《Journal of microelectromechanical systems》2004,13(5):814-821
This paper describes the fabrication and characterization of a thermal ink jet (TIJ) printhead suitable for high speed and high-quality printing. The printhead has been fabricated by dicing the bonded wafer, which consists of a bubble generating heater plate and a Si channel plate. The Si channel plate consists of an ink chamber and an ink inlet formed by KOH etching, and a nozzle formed by inductively couple plasma reactive ion etching (ICP RIE). The nozzle formed by RIE has squeezed structures, which contribute to high-energy efficiency of drop ejector and, therefore, successful ejection of small ink drop. The nozzle also has a dome-like structure called channel pit, which contributes to high jetting frequency and high-energy efficiency. These two wafers are directly bonded using electrostatic bonding of full-cured polyimide to Si. The adhesive-less bonding provided an ideal shaped small nozzle orifice. Use of the same material (Si substrate) in heater plate and channel plate enables the fabrication of high precision long printhead because no displacement and delamination occur, which are caused by the difference in thermal expansion coefficient between the plates. With these technologies, we have fabricated a 1" long printhead with 832 nozzles having 800 dots per inch (dpi) resolution and a 4 pl. ink drop volume. 相似文献
4.
A 4*4 directional coupler switch matrix is developed which uses, for the first time, the quantum confined Stark effect of InGaAlAs/InAlAs multiquantum well structures. The rearrangeable nonblocking 4*4 network with six 2*2 switches is shown to be perfectly functional with switching voltages between 5 and 6 V and crosstalk below -17 dB in all the operation states.<> 相似文献
5.
Masami Ikeda Susumu Fukumoto Hiroshi Takao Shinya Ohtsuka Eiichi Haginomori Masayuki Hikita 《Electrical Engineering in Japan》2002,141(4):16-24
This paper describes the dielectric breakdown characteristics of oil and oil‐impregnated paper for very fast transient (VFT) voltages. Blumlein circuits generate VFT voltages of 60 and 300 ns in a pulse width that simulates disconnecting switching surges in gas‐insulated switch gears. We measured the breakdown voltages of needle‐to‐plane, plane‐to‐plane oil gaps and several pieces of paper between plane electrodes for VFT and lightning impulse voltages. The measured data were formulated in V‐t characteristics and Weibull probability distributions. The inclination n of V‐t characteristics of insulating paper is 150, which is less than n = 13.7 of the plane‐to‐plane oil gap in the VFT time range. The shape parameters of Weibull distribution obtained in this study show that the scattering of breakdown voltages of paper is much less than that of oil. © 2002 Wiley Periodicals, Inc. Electr Eng Jpn, 141(4): 16–24, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.10043 相似文献
6.
Xin Sun Qiang Lu Moroz V. Takeuchi H. Gebara G. Wetzel J. Shuji Ikeda Changhwan Shin Tsu-Jae King Liu 《Electron Device Letters, IEEE》2008,29(5):491-493
A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control). 相似文献
7.
Anumberoflanthanideternarycomplexescon tainingheterocyclicamineshavebeenreportedsince1960 [1] .Inrecentyearsmuchattentionhasbeenpaidtoquaternarycomplexesoflanthanidesbecauseofin terestingstructure ,coordinationmode ,competitionre actionandproperty[2~ 9] .ESRcane… 相似文献
8.
Akira Watanabe Yoshimitsu Takeuchi Goji Saeki 《Journal of the American Ceramic Society》1985,68(11):308-C
The length of potassium titanate fibers produced by several conventional methods averages 50 μm, with a maximum of 100 μm. Extremely long fibers (most >1000 μm long) were obtained by calcination in N2 gas flowing at 5.2×10-4 m/s. 相似文献
9.
Iida M. Kuroda N. Otsuka H. Hirose M. Yamasaki Y. Ohta K. Shimakawa K. Nakabayashi T. Yamauchi H. Sano T. Gyohten T. Maruta M. Yamazaki A. Morishita F. Dosaka K. Takeuchi M. Arimoto K. 《Solid-State Circuits, IEEE Journal of》2005,40(11):2296-2304
A 16 Mb embedded DRAM macro in a fully CMOS logic compatible 90 nm process with a low noise core architecture and a high-accuracy post-fabrication tuning scheme has been developed. Based on the proposed techniques, 61% improvement of the sensing accuracy is realized. Even with the smallest 5 fF/cell capacitance, a 322 MHz random-cycle access while 32 ms data retention time which contributes to save the data retention power down to 60 /spl mu/W are achieved. 相似文献
10.
T. Takeuchi T. Sasaki M. Hayashi K. Hamamoto K. Makita K. Taguchi K. Komatsu 《Photonics Technology Letters, IEEE》1996,8(3):361-363
A transceiver PIC consisting of a DFB-LD, a receiver PD and a Y-shaped branch waveguides is realized by in-plane bandgap energy controlled selective MOVPE. Both active and passive core layers are formed in one step selective growth, and complicated fabrication procedure is no longer required. More than 1 mW fiber coupled power and 7 GHz receiver bandwidth are obtained. The modulation and detection operations at 500 Mb/s are successfully demonstrated. 相似文献