Expression of three UDP-N-acetyl-alpha-D-galactosamine:polypeptide GalNAc N-acetylgalactosaminyltransferases in adenocarcinoma cell lines

The levels of mRNA expression of three UDP-N-acetyl-alpha-D-galactosamine:polypeptide GalNAc N-acetylgalactosaminyltransferases (GalNAc-transferases) were quantified for human adenocarcinoma cell lines from pancreas, colon, stomach, and breast. Two of the GalNAc-transferases, GalNAc-T1 and GalNAc-T2, were expressed constitutively and at low levels in most or all cell lines examined. A third GalNAc-transferase, GalNAc-T3, was differentially expressed. Well-differentiated adenocarcinoma cell lines expressed high levels and moderately differentiated cell lines expressed lower levels of GalNAc-T3. Cell lines classified as poorly differentiated failed to express GalNAc-T3 mRNA at levels that could be detected by Northern blot analysis. Differential expression of the GalNAc-T3 protein was confirmed in these cell lines by Western blotting. We propose that glycosylation in tumor cell lines may be regulated in part by differential expression of GalNAc-transferases, and we suggest that GalNAc-T3 gene expression may be a molecular indicator of differentiated adenocarcinoma.     

Diagnosis of childhood BK virus cystitis by electron microscopy and PCR

A case of BK virus cystitis in a 5 year old boy is reported. This patient, who was not immunocompromised, had had acute cystitis for two weeks. Many intracytoplasmic inclusions were observed in urinary sediment smears stained by the Papanicolaou method. Electron microscopic examination showed virus particles, presumed to be human polyomavirus, in the nuclei of the degenerated urothelial cells. A DNA sequence of the BK virus was detected in 200-300 urothelial cells in Papanicolaou stained smears by the polymerase chain reaction. BK virus is an unusual cause of symptomatic cystitis in a healthy child.     

A wide-bandwidth low-noise InGaAsP-InAlAs superlattice avalanchephotodiode with a flip-chip structure for wavelengths of 1.3 and 1.55μm

The authors reports the fabrication of a flip-chip InGaAsP-InAlAs superlattice avalanche photodiode using gas source molecular beam epitaxy. The incident light reaches the InGaAs photoabsorption layer through the InP substrate and an InGaAsP-InAlAs superlattice multiplication region which are transparent for wavelengths of 1.55 and 1.3 μm. The light reflection by the electrode enables the absorption layer to be as thin as 0.8 μm without significantly reducing the quantum efficiency. A maximum bandwidth of 17 GHz was obtained at a low multiplication factor because the transit time through the absorption layer is reduced     

Repeatedly foldable AMOLED display

In this study, a 5.9‐inch foldable active‐matrix organic light emitting diode (AMOLED) display was developed. A folding test was performed repeatedly. The display survived the folding test (100,000 folds) with a curvature radius of 2 mm. To protect an organic light emitting diode (OLED) against moisture, inorganic passivation layers are provided on the upper and lower sides of the flexible display. Using our transfer technology, high density passivation layers can be obtained. The measured water vapor transmission rate of the layer is 7 × 10^?6 g/m²?day or less, which improves OLED reliability. With these techniques, we have developed a book‐type display, which is repeatedly foldable like a book, and a tri‐fold display including a display area, which is foldable in three.     

Multi agent architecture for dynamic incremental process planning in the flexible manufacturing system

Due to rapid changes of markets and pressures of competitions, industries are adopting their production ways to support diversity of customer’s needs and increase of new product developments. This paper deals with development of an agent-based architecture of dynamic systems for process planning in the manufacturing systems. In consideration of alternative manufacturing processes and machine tools, the process plans and the schedules of the manufacturing resources are generated incrementally and dynamically. A previously proposed negotiation protocol is customized and improved to generate suitable process plans for the target products real-timely and dynamically, based on the alternative manufacturing processes. The alternative manufacturing processes are presented by the process plan networks and the suitable process plans are searched and generated to cope with both the dynamic status and disturbances of the manufacturing systems. We initiatively combine the heuristic search algorithms of the process plan networks with the negotiation protocols, in order to generate suitable process plans.     

Performance Comparison of Circuits for Pole‐Mounted STATCOM Using SiC Devices

The recent years have seen an increasing trend in the cumulative installed capacity of distributed generators. As a result, voltage management may become difficult in existing power distribution systems in the future. A STATCOM (STAtic synchronous COMpensator) is a promising option for solving this problem because it can control reactive power rapidly and continuously. For a distribution system, STATCOM needs to be pole‐mounted to realize its low cost. However, a transformer for a STATCOM is large and heavy, and hence it is difficult to install a STATCOM on a distribution pole. We adopt a transformerless STATCOM to reduce STATCOM size and use SiC devices with low‐loss performance to obtain a more compact and efficient STATCOM. There are a large number of circuits available for a STATCOM, and there has been considerable research on performance comparisons among these circuits. However, these comparisons were drawn under different conditions, including switching frequency and level number for the circuits. In addition, these comparisons do not include the use of SiC devices. We made an equitable comparison for a 100 kVa pole‐mounted STATCOM using SiC devices. We discuss the performance and characteristics of each circuit in terms of efficiency and volume.     

Observation of iron silicide formation by plan-view transmission electron microscopy

The formation and the phase transitions of iron silicide by solid-phase epitaxy have been investigated by means of plan-view transmission electron microscopy, which enables us to observe a clean interface between Fe and Si. Layers of Fe were deposited on Si (100) at room temperature in an ultrahigh vacuum chamber. The sample was annealed in the electron microscope at a temperature between 673 and 1073 K. After annealing at 673 K, FeSi crystallites were formed with various orientations. When the annealing temperature was increased to 973 K, we found that the crystallites suddenly started to coalesce into grains of several hundreds of nanometers in size and polycrystalline beta-FeSi2 was formed. These phase transitions were also confirmed with electron energy-loss spectroscopy.     

Demonstration of 80-km-Long SMF Transmission on Time-Spread Wavelength-Hopping-Type OCDM With Dispersion Compensators

We demonstrate the novel dispersion compensation for time-spread/wavelength-hop (TS-WH) optical code-division multiplexing (OCDM). The single-mode-fiber transmission, up to 80 km long, on TS-WH OCDM was achieved by a combination of the dispersion-compensated decoder and the multichannel-type dispersion-slope compensator.     

Investigation of gas-liquid interface in atmospheric-pressure micro plasma with solution

An atmospheric-pressure glow-discharge micro plasma in contact with liquid paraffin is stably generated by using a capacitively coupled plasma method with a mesh electrode. When characteristics of the plasma are measured in the boundary between the micro plasma (gas-phase) and liquid paraffin (liquid-phase) using optical emission spectroscopy, spectrum peaks of the emission of CH and C₂ which dissociate from paraffin are observed. The result indicates that solution can feed particles to the plasma at gas-liquid interface and this plasma is accordingly expected to promote an attractive plasma process for creating materials consisting of elements in various solutions.