ConClass: a framework for real-time distributed knowledge-basedprocessing

We have developed a problem-solving framework, called ConClass, that is capable of classifying continuous real-time problems dynamically and concurrently on a distributed system. ConClass provides an efficient development environment for describing and decomposing a classification problem and synthesizing solutions. In ConClass, decomposed concurrent subproblems specified by the application developer effectively correspond to the actual distributed hardware elements. This scheme is useful for designing and implementing efficient distributed processing, making it easier to anticipate and evaluate system behavior. The ConClass system provides an object replication feature that prevents any particular object from being overloaded. In order to deal with an indeterminate amount of problem data, ConClass dynamically creates object networks that justify hypothesized solutions, and thus achieves a dynamic load distribution. A number of efficient execution mechanisms that manage a variety of asynchronous aspects of distributed processing have been implemented without using schedulers or synchronization schemes that are liable to develop bottlenecks. We have confirmed the efficiency of parallel distributed processing and load balancing of ConClass with an experimental application     

NiCoFe/C cathode electrocatalysts for direct ethanol fuel cells

A direct ethanol fuel cell (DEFC), which is less prone to ethanol crossover, is reported. The cell consists of PtRu/C catalyst as the anode, Nafion^® 117 membrane, and Ni–Co–Fe (NCF) composite catalyst as the cathode. The NCF catalyst was synthesized by mixing Ni, Co, and Fe complexes into a polymer matrix (melamine-formaldehyde resins), followed by heating the mixture at 800 °C under inert atmosphere. TEM and EDX experiments suggest that the NCF catalyst has alloy structures of Ni, Co and Fe. The catalytic activity of the NCF catalyst for the oxygen reduction reaction (ORR) was compared with that of commercially available Pt/C (CAP) catalyst at different ethanol concentrations. The decrease in open circuit voltage (V_oc) of the DEFC equipped with the NCF catalysts was less than that of CAP catalyst at higher ethanol concentrations. The NCF catalyst was less prone to ethanol oxidation at cathode even when ethanol crossover occurred through the Nafion^®117 film, which prevents voltage drop at the cathode. However, the CAP catalyst did oxidize ethanol at the cathode and caused a decrease in voltage at higher ethanol concentrations.     

Thickness dependence of H2 gas sensor in amorphous SnQx films prepared by ion-beam sputtering

Amorphous SnO_x films were deposited by ion-beam sputtering on sintered alumina substrates. Amorphous film sensors were prepared by annealing the films at 300° C for 2 h in air. The thickness dependence of resistivity and hydrogen gas sensitivity were measured at 150° C over the thickness range 1 to 700 nm. A resistivity maximum was observed in ultrathin films. Resistivity increased by three orders of magnitude with increasing film thickness from 0.9 to 7.4 nm and then decreased by five orders of magnitude from 7.4 to 35 nm. Ultrathin film sensors showed sensitivity maxima around a thickness of 10 nm. Sensitivity and resistivity of ultrathin films were significantly influenced by the thermal expansion coefficient and the surface state of the substrate.     

Properties of indium oxide/tin oxide multilayered films prepared by ion-beam sputtering

The preparation and characterization of indium oxide (InO _x )/tin oxide (SnO _y ) multilayered films deposited by ion-beam sputtering are described and compared with indium tin oxide (ITO) films. The structure and the optoelectrical properties of the films are studied in relation to the layered structures and the post-deposition annealing. Low-angle X-ray diffraction analysis showed that most films retained the regular layered structures even after annealing at 500° C for 16 h. As an example, we obtained a resistivity of 6×10^–4 cm and a transparency of about 85% in the visible range at a thickness of 110 nm in a multilayered film of InO _x (2.0 nm)/SnO _y (0.2 nm)×50 pairs when annealed at 300° C for 0.5 h in air. Hall coefficient measurements showed that this film had a mobility of 17 cm² V^–1 sec^–1 and a carrier concentration (electron density) of 5×10²⁰ cm^–3.     

Effects of 4He impurities on 3He nuclear spin-lattice relaxation in hcp solid 3He

Nuclear spin-lattice relaxation properties of hcp solid ³He with ⁴He impurities have been studied. At temperatures below the exchange plateau region, three kinds of relaxation time were observed. To analyze the data, a phenomenological four-bath model was developed, the four baths being the Zeeman bath, the phonon bath, an X-bath, and a Y-bath. The X-bath consists of the exchange bath and a part of the ⁴He-⁴He elastic interaction bath. The Y-bath is the main part of the elastic interaction bath. We measured the concentration dependence of the energy constants of all the baths, as well as the temperature and concentration dependences of the three kinds of relaxation time. The relaxation behavior corresponding to the process between the X-bath and the Y-bath could not be expressed by a single exponential function of time and the relaxation rate was strongly dependent on the concentration. This process may be related to the internal thermal equilibrium process within the elastic interaction bath. The impurity-dependent relaxation time between the X-bath and the phonon bath had a temperature dependence of T ^–n with n = 7.4±0.3.     

Electrochemical analysis of zincate treatments for Al and Al alloy films

Electrochemical behavior of Al and Al alloy films in zincate solution was investigated to elucidate the effect of the zincate pretreatment for electroless NiP deposition, which is used for under bump metallization for LSI interconnects. The immersion potential for AlCu and AlSiCu, immediately reached to constant, which was almost equal potential to zinc reference electrode. The corrosion current for the AlCu and AlSiCu films was larger than that of the Al and AlSi films in the zincate solution. It was also confirmed that the deposited Zn at the surface of AlCu and AlSiCu films possessed smaller grain size and larger amount of nucleation, resulted in the formation of flat NiP films.     

Effect of the addition of silver compounds during the pyrolysis of manganese nitrate on tantalum anodic oxide film

A study of the pyrolysis of an aqueous solution of manganese nitrate in the presence of silver compounds has been carried out. Thermal analysis showed that the MnO₂ formation temperature and the transformation temperature from MnO₂ to Mn₂O₃ shifted towards a lower temperature in the presence of silver acetate. A large particle-size and high crystallinity MnO₂ was formed; this may be a useful method of making an excellent tantalum capacitor with high capacitance.     

A new proposal on field-access bubble drives

This paper describes the results of driving bubbles with various rotating magnetic fields and proposes a triangulardrive method. This method is expected to furnish high power efficiency and simplification of the drive electronic circuit in practical magnetic-bubble memories.