Controlling thickness to tune performance of high-mobility transparent conducting films deposited from Ga-doped ZnO ceramic target

Structure modification has been found to tune significantly the transparent-conducting performance, especially mobility and conductivity of hydrogenated Ga-doped ZnO (HGZO) films. The strong correlation between film thickness and mobility of the films is revealed. The mobility increases quickly with increasing the thickness from 350 to 900 nm, and then tends to be saturated at further thicknesses. A higher mobility than 50 cm²/Vs can be achieved, which is an extra-high value for polycrystalline ZnO films deposited by using the sputtering technique. The thickness-dependent mobility originates from scatterings on grain boundaries and dislocation-induced defects controlled by thin-film growth. Based on the Volmer-Weber model, an expansion model is built up to describe the thickness-dependent crystal growth of the HGZO films, especially at the thick films. As a result, the 800 nm-thick HGZO film obtains the highest performance with high mobility of 51.5 cm²/Vs, low resistivity of 5.3 × 10^?4 Ωcm, and good transmittance of 83.3 %.     

Synthesis and Application of Novel Nano Fe-BTC/GO Composites as Highly Efficient Photocatalysts in the Dye Degradation

Topics in Catalysis - Nano Fe-BTC/graphene oxide (GO) composites were successfully synthesized by hydrothermal treatment with a microwave-assisted method. Samples were characterized by X-ray...     

Advanced Surface of Fibrous Activated Carbon Immobilized with FeO/TiO2 for Photocatalytic Evolution of Hydrogen under Visible Light

FeO-doped TiO₂ nanoparticle photocatalysts were immobilized onto the surface of fibrous activated carbon (ACF) via a sol-gel process. As an adsorbent and photocatalyst, FeO-TiO₂ on immobilized ACFs (FeO-TiO₂/ACF) greatly improved the photocatalysis rate of hydrogen production as compared with pure TiO₂ and ACF-TiO₂ under UV irradiation and visible light. The addition of ACFs surface significantly reduced the photogenerated pairs of electrons-hole recombination, thereby promoting the photocatalysis action of doped photo-metal oxides of FeO-TiO₂. Co-doping of FeO onto the lattice of the TiO₂ approach can improve the absorption activity of visible light through photo-metal oxide of TiO₂ and further enhance hydrogen production under visible light. The photocatalytic fabrics (FeO-TiO₂/ACF) were effortlessly split out from the experimental solution for re-utilization and exhibited high stability even after five complete regeneration cycles.     

Influence of the preparation conditions on the size and morphology of nanocrystalline lanthanum orthoferrite

Nanocrystalline LaFeO₃ is prepared by the dehydration of coprecipitated lanthanum and iron(III) hydroxides. It is shown that the behavior of the samples during heating and the size distribution of LaFeO₃ nanocrystals can be considerably different depending on the scheme used for coprecipitation of lanthanum and iron hydroxides; independently of the method employed for coprecipitation of the initial compounds, sintering of the samples at 950°C leads to the formation of lanthanum orthoferrite crystals up to 100 nm in size.     

High-temperature electrical conductivity of aluminium nitride

The electrical conductivity of hot-pressed polycrystalline aluminium nitride doped with oxygen and beryllium was measured as a function of temperature from 800 to 1200° C and over a range of nitrogen partial pressure from 10² to 10⁵ Pa. The effect of beryllium dopant, the independence of conductivity from nitrogen partial pressure, and the observed activation energy suggested extrinsic electronic species or aluminium vacancies as charge carriers. Polarization measurements made with one electrode blocking to ionic species indicated that the aluminium nitride with oxygen impurity was an extrinsic electronic conductor.     

Comments on `Hash-based and index-based join algorithms for cubeand ring connected multicomputers' by E.R. Omiecinski and E.T. Lin

The cost distributions of both the parallel hybrid-hash join and the parallel join-index join algorithms proposed in the above-named work (ibid., vol.1, p.329-43, Sept. 1989) are presented in more detail. The result shows that almost the entire relation may need to be retrieved from disk, though the join selectivity is low. A table of semi-join selectives and cube sizes is given to show the condition that the join-index method performs better than the hybrid-hash method, i.e., the really low selectivity for the join-index method. An error in one of the cost formulas is corrected, and a more efficient method on the final join in the join-index method is proposed     

Development of Bi(Pb)-2223/Ag pancake-shaped and solenoidal coils

High temperature superconducting (HTSC) multifilamentary (MT) Bi(Pb)-2223/Ag tapes with reproducible critical current density of between 15000 and 20000 A/cm² at 77 K in self field have been achieved using the standard flat-rolling method as the intermediate deformation between sintering periods. Long lengths of Bi(Pb)-2223/Ag MT tapes up to 43 m prepared by the conventional method of powder-in-tube (PIT) have been successfully produced on a laboratory scale. Several coils have been fabricated from sections of the long length tape, using the co-wound wind-and-react (W&R) procedure for the pancake-shaped and the singly-wound W&R as well as R&W procedure for the solenoidal coils. A novel W&R solenoidal coil (reaching ~973 ampere-turns) wound on an alumina ceramic tube generates a DC field of ~19 mT at 77 K and has been fabricated together with five pancake-shaped coils, each generating an average of ~5 mT at 77 K. These are destined for magnet construction with a possible combined calculated field of ~0.04 T at 77 K (with liquid nitrogen as a coolant)     

DC isolation and RF dissipation loss of coplanar waveguide on GaAs multi conductive Layers bombarded by H/sup +/ and Fe/sup +/ ions

This letter explores the dc isolation and radio frequency (RF) dissipation loss of coplanar waveguide (CPW) lines of H/sup +/ and Fe/sup +/ ion bombarded GaAs multi conductive epitaxial layers. It is demonstrated that although a sheet resistivity as high as 10/sup 8/ /spl Omega/sq has been achieved by ion bombardment, showing excellent dc isolation, the RF dissipation loss of gold metallized CPW lines on the bombarded multi conductive epitaxial layers are higher than that on a semi-insulating GaAs substrate, especially at higher frequencies (0.5 dB/cm higher at 50 GHz). This is probably caused by deep level trappings due to the ion bombardment.