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1.
V. I. Timoshenko Yu. V. Knyshenko Yu. G. Lyashenko 《Journal of Engineering Physics and Thermophysics》1997,70(3):394-398
The effect of turbulizing asperities positioned on one of the walls of a plane channel on the intensity of exchange processes
near a smooth wall with injection of different working media is studied experimentally.
Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 70, No. 3, pp. 404–408, 1997. 相似文献
2.
We studied experimentally the influence of the degree of water emulsification ofM-40 mazut heated to the water boiling point on the self-ignition time with its pulsed high-pressure injection into heated air. It is shown that water addition does not change the chemistry of the reaction and heating the water-fuel emulsion leads to the disappearance of differences in the ignition character of the emulsion and the moisture-free fuel. It is confirmed that the features of selfignition are determined mostly by conditions of mixture formation. Indirect evidence is obtained that the dynamic tensile strength of the fluid strongly influences the primary dispersion of the jet during its outflow from the sprayer nozzle.Institute of Theoretical and Applied Mechanics, Novosibirsk 630090. Translated from Fizika Goreniya i Vzryva, Vol. 31, No. 4, pp. 20–25, July–August, 1995. 相似文献
3.
This paper reports off-lattice Monte Carlo simulations of highly-branched comb homopolymers weakly adsorbed on a flat, featureless surface showing only covolume and dispersion interactions with the adsorbate. A minimal coarse-grained model, described by hard spheres connected by harmonic springs, was employed. The interaction energy of the adsorbed combs and linear chains is first discussed as a function of the molecular mass and of the number of beads in contact with the surface. The molecular size is then investigated as a function of backbone length and branching density at a fixed arm size. The apparent swelling exponents of the adsorbed combs are larger than those of the corresponding linear chains, and much larger than that of the free molecules. This result indicates a surface-induced stiffening of the comb backbone, further studied through the persistence length lpers. It is found that lpers increases upon adsorption over the free-molecule value, more so the larger is the branching density. Finally, the thickness of the adsorbed layer, the surface-induced molecular anisotropy and the molecular aspect ratio are investigated as a function of branching density and molecular mass. 相似文献
4.
S. M. Zharkii A. A. Karabutov I. M. Pelivanov N. B. Podymova V. Yu. Timoshenko 《Semiconductors》2003,37(4):468-472
Propagation of ultrasonic signals induced by nanosecond laser pulses in porous silicon (por-Si) is considered from both the theoretical and the experimental viewpoints. The experimental samples are por-Si layers with 5-to 40-µm thickness and porosity of 50–75%; these layers were formed on a single-crystal silicon substrate by electrochemical etching. It is shown that the suggested ultrasonic laser method allows both the thickness and the porosity of a layer to be determined with the respective accuracies of no worse than 1 µm and 5%. 相似文献
5.
E. Yu. Krutkova V. Yu. Timoshenko L. A. Golovan P. K. Kashkarov E. V. Astrova T. S. Perova B. P. Gorshunov A. A. Volkov 《Semiconductors》2006,40(7):834-838
Transmission of grooved silicon structures with 4-and 7-μm periods is studied by polarization-sensitive IR and submillimeter spectroscopy in a wide spectral range. The experimental results obtained in the range 1–10-μm are explained in terms of geometrical optics taking into account the scattering of radiation. In the far-IR (20–2000 μm) range, the structures exhibit a strong birefringence, which can be described in terms of the effective medium model in the electrostatic approximation. An influence of photoexcitation on the optical transmission and its anisotropy is observed; this effect can be explained in terms of the effective medium model taking into account the interaction of radiation with free carriers. 相似文献
6.
E. A. Konstantinova V. Ya. Gayvoronskiy V. Yu. Timoshenko P. K. Kashkarov 《Semiconductors》2010,44(8):1059-1063
Electron spin resonance spectroscopy is used to study the effects of illumination and changes in temperature on spin centers in nanocrystalline anatase powders synthesized by sol-gel methods with various complexing agents. A correlation between the concentration of oxygen radicals at the surface and the rate of photocatalytic decomposition of organic compounds in the presence of TiO2 is observed. It is shown that the concentration of centers active in the electron spin resonance spectra can be used for monitoring the photocatalytic activity of TiO2. 相似文献
7.
A. V. Pavlikov L. A. Osminkina I. A. Belogorokhov E. A. Konstantinova A. I. Efimova V. Yu. Timoshenko P. K. Kashkarov 《Semiconductors》2005,39(11):1338-1341
Infrared spectroscopy is used to investigate the effect of ammonia adsorption on the concentration of equilibrium charge carriers in porous-silicon layers with various initial types of dopants at different concentrations. It is found that ammonia adsorption results in an increase in the number of free electrons in n-type samples up to a level exceeding 1018 cm?3. In p-type samples, a nonmonotonic dependence of the charge-carrier concentration on ammonia pressure is observed. The obtained results are accounted for by the appearance of adsorption-induced shallow donor states that, along with the initial-dopant and surface-defect states, specify the charge-carrier type and concentration in the silicon nanocrystals of the porous layer after ammonia adsorption. 相似文献
8.
Photovoltaic phenomena in the structures por-Si/p-Si were investigated by the pulsed photovoltage method in the time interval 100 ns-10 ms using irradiation with nanosecond
laser pulses with photon energies 1.4, 2.0, 2.8, and 3.7 eV. The data obtained show that besides the barrier photovoltage,
due to the separation of nonequilibrium charge carriers in the space-charge region of p-Si at the por-Si/p-Si interface, there also exists an efficient mechanism of photovoltage formation due to charging of the surface of the por-Si nanostructure. This mechanism is explained as “optical doping” of a semiconductor and develops in a manner peculiar to
semiconductor nanostructures.
Fiz. Tekh. Poluprovodn. 32, 613–619 (May 1998) 相似文献
9.
V. V. Ushakov V. A. Dravin N. N. Mel’nik V. A. Karavanskii E. A. Konstantinova V. Yu. Timoshenko 《Semiconductors》1997,31(9):966-969
The effect of irradiation by 300-keV Ar+ ions on the properties of electrochemically produced porous silicon is studied at doses of 5×1014–1×1016 cm−2. Raman scattering and photoluminescence data are used to show that the radiation hardness of porous silicon layers is substantially
greater than that of single crystal silicon.
Fiz. Tekh. Poluprovodn. 31, 1126–1129 (September 1997) 相似文献
10.
M. B. Gongalsky E. A. Konstantinova L. A. Osminkina V. Yu. Timoshenko 《Semiconductors》2010,44(1):89-92
Luminescence of gas-phase singlet oxygen optically sensitized by microporous silicon at room temperature is detected for the first time. At the same time, a photoinduced increase in the photoluminescence intensity of defects at the sample surface in oxygen atmosphere is observed. It is shown that mechanical grinding of porous silicon layers yields a decrease in the amount of photogenerated singlet oxygen. 相似文献