A 10-s doping technology for the application of low-temperaturepolysilicon TFTs to giant microelectronics

A bucket-type high-density (0.25-1.2-mA/cm²) low-energy (500-2000 V) ion source was utilized for high-speed phosphorus doping directly into a thin polysilicon layer without cap SiO₂. Doping gas with He dilution was selected to reduce etching of polysilicon film. Excimer laser (XeCl, 8 mm×8 mm) pulse annealing was introduced to activate effectively the doped impurity. The combination of these techniques provided a practically low sheet resistance for the TFT source, drain, and gate with a short time doping. The low-temperature polysilicon TFT fabricated with a doping time of 10 s had characteristics comparable to those of that fabricated by a longer time doping or conventional ion implantation, showing the practicality of this technology and its promise for giant microelectronics     

Quick Activation of Optimized Zeolites with Microwave Heating and Utilization of Zeolites for Reusable Desiccant

Effectiveness of microwave heating in an activation treatment of zeolites was studied and utilization of zeolites for reusable desiccant was examined. X zeolite was chosen as a target material for its large adsorption capacity. Na-X zeolite easily caused a thermal runaway by microwave radiation of 500 W but Ca contained X zeolite merely reached ca. 573 K under the same conditions. Mixtures of Na-X and Ca-X with suitably mixed ratios did not cause the thermal runaway and their heating temperatures were controlled (>573 K) at will. Under the most suitable conditions, the mixture reached a dehydration degree of 92%. A degradation degree of adsorptive capacity of the mixture for water was examined after three treatments. The average degradation degree was 1.5% per treatment. The heating method is promising as a quick and easy technique to activate zeolite. By applying the method, the zeolites with suitable mixing ratios are usable as a reusable desiccant for home use.     

Relative reactivity of hydrogen donor solvent in coal liquefaction

Hydrogen transfer from donor solvent to coal must involve reactions such as hydrogen donation to free radicals and hydrogenation of aromatic structures. The relative reactivities of five typical hydrogen donor solvents, more reactive than tetralin, were determined using a competing elimination reaction in the liquefaction of a bituminous coal at 400 °C and a brown coal at 350 °C. 9,10-Dihydroanthracene, 9,10-dihydrophenanthrene and 1,2,3,4-tetrahydroquinoline exhibited outstanding hydrogen donating ability. Further, the relative reactivities of five mild hydrogen donor solvents such as acenaphthene and indan were determined by a similar elimination reaction using a bituminous coal at 450 °C.     

MAGNETIC PROPERTY CHANGE IN AN AUSTENITIC STAINLESS STEEL SUBJECTED TO DAMAGE AT ELEVATED TEMPERATURE - MICROSTRUCTURE RESPONSIBLE FOR MAGNETIC PROPERTY

It has been found that magnetic property changes in austenitic stainless steel subjected to creep at high temperature. The change of magnetic property is mainly due to decrease the chromium concentration in the vicinity of grain boundary and transform into martensite in the area. However this result is for short-term creep. It is necessary to evaluate the long-term creep in order to develop non-destructive technique for plants. Moreover it is important to evaluate the fatigue. The change of magnetic property for those damages at high temperatures is investigated. The transformation into martensite is observed for both the long-term creep and fatigue. The magnetic regions are observed in sever deformed area and near crack. Then the formation of magnetic phases is related to the damage. The damage at high temperature can be universally evaluated.     

Microstructure of a Molybdenum Nitride Layer Formed by Nitriding Molybdenum Metal

For pure molybdenum nitrided at 1373 K in NH₃ gas, microstructural observations of a molybdenum nitride layer were conducted through a transmission electron microscope. The molybdenum nitride layer consisted of two molybdenum nitrides: an outer one of γ-Mo₂N and an inner one of β-Mo₂N. A great number of (011)[0     1] type twins were observed in the β-Mo₂N phase, whereas the microstructure of the γ-Mo₂N phase was almost free from lattice defects except for slightly observed {111}〈112〉 type twin.     

Iridium‐Catalyzed Asymmetric Hydrogenation of Tosylamido‐Substituted Pyrazines for Constructing Chiral Tetrahydropyrazines with an Amidine Skelton

Dinuclear triply chloro‐bridged iridium(III) complexes bearing chiral diphosphine ligands catalyze the asymmetric hydrogenation of tosylamido‐substituted pyrazines to give the corresponding chiral tetrahydropyrazines with an amidine skeleton in high yield and with high enantioselectivity. Addition of N,N‐dimethylanilinium bromide enhanced the catalytic activity of the iridium complexes and also increased the enantioselectivity of the products by trapping the hydrogenated amine products with HBr from N,N‐dimethylanilinium bromide. The amidine skeleton of the products could be transformed to give chiral piperazinones and piperazines without loss of enantioselectivity.

     

Enhancement of Defect Production Rates in <Emphasis Type="Italic">n</Emphasis>-Type Silicon by Hydrogen Implantation Near 270 K

Defect production behavior in hydrogen-implanted n-type silicon has been studied by varying the implantation temperature from 88 K to 303 K. Deep-level transient spectroscopy has been used to reveal electron trap spectra for Schottky diodes fabricated at room temperature after implantation. Metastable defects are observed in addition to vacancy- and hydrogen-related defects. It is found that the production rates of these defects are greatly enhanced by hydrogen implantation near 270 K. It is suggested that hydrogen plays an important role in enhancement of defect production rates, since such defect production behavior is not observed in He-implanted samples.