High performance of silicided silicon-sidewall source and drain (S4D) structure

A silicided silicon-sidewall source and drain (S⁴D) structure is proposed for sub-0.1-μm devices. The merit of the S⁴D structure is that the series resistance of the source and drain is significantly reduced since the silicide layer is attached very close to the gate electrode and the silicon sidewall can be doped very highly. Thus, very high drain current drive can be expected, Another advantage of this structure is that the source and drain extensions are produced by the solid-phase diffusion of boron from the highly doped silicon-sidewall. Thus, shallow extensions with very high doping can be realized. A 75-nm gate length pMOSFET fabricated with this structure is shown to exhibit excellent electrical characteristics     

P-MOSFET's with ultra-shallow solid-phase-diffused drain structureproduced by diffusion from BSG gate-sidewall

A p-MOSFET structure with solid-phase diffused drain (SPDD) is proposed for future 0.1-μm and sub-0.1-μm devices. Highly doped ultrashallow p⁺ source and drain junctions have been obtained by solid-phase diffusion from a highly doped borosilicate glass (BSG) sidewall. The resulting shallow, high-concentration drain profile significantly improves short channel effects without increasing parasitic resistance. At the same time, an in situ highly-boron-doped LPCVD polysilicon gate is introduced to prevent the transconductance degradation which arises in ultrasmall p-MOSFETs with lower process temperature as a result of depletion formation in the p⁺-polysilicon gate. Excellent electrical characteristics and good hot-carrier reliability are achieved     

Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe₂ thin films have been investigated. The n-type CuInSe₂ films in which the carrier concentration was about 3×10¹⁶ cm⁻³, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×10¹⁶ e cm⁻². As the electron fluence exceeded 10¹⁷ e cm⁻², both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm⁻¹, which is slightly lower than that of III–V compound materials.     

High performance 35 nm gate length CMOS with NO oxynitride gate dielectric and Ni salicide

The 35 nm gate length CMOS devices with oxynitride gate dielectric and Ni salicide have been fabricated to study the feasibility of higher performance operation. Nitrogen concentration in gate oxynitride was optimized to reduce gate current I/sub g/ and to prevent boron penetration in the pFET. The thermal budget in the middle of the line (MOL) process was reduced enough to realize shallower junction depth in the S/D extension regions and to suppress gate poly-Si depletion. Finally, the current drives of 676 /spl mu/A//spl mu/m in nFET and 272 /spl mu/A//spl mu/m in pFET at V/sub dd/=0.85 V (at I/sub off/=100 nA//spl mu/m) were achieved and they are the best values for 35 nm gate length CMOS reported to date.     

Trap Levels in Eu-Doped SrAl2O4 Phosphor Crystals Co-Doped with Rare-Earth Elements

SrAl₂O₄:Eu²⁺ phosphor crystals co-doped with auxiliary activators such as La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or Y have been grown by the floating zone (FZ) technique. Photoluminescence spectrum (PL), time-resolved PL, and thermally stimulated luminescence (TSL) are evaluated to clarify the long-duration phosphorescence mechanism of SrAl₂O₄, Eu, and Ln phosphors. TSL spectra were measured in the temperature range from RT to 600 K to evaluate the depth and densities of the traps generated by the doping of auxiliary activators that are responsible for the long-duration phosphorescence. The peak wavelength of PL does not vary with auxiliary activator elements, while decay curves vary greatly with the auxiliary activators. The trap depth and the densities of the trapped carriers estimated based on the hole trap model also vary with the auxiliary activator elements. The traps generated at around E =0.5 eV by the auxiliary activators, Nd, Dy, and Tm, with sufficient densities are effective for the long-duration phosphorescence.     

Thermal strain of high strength polyethylene fiber in low temperature

High strength polyethylene fiber (Toyobo, Dyneema® fiber: hereinafter abbreviated to DF) has a negative thermal expansion coefficient. Relation between fiber structure and thermal strain of DF used as reinforcement of DF reinforced plastic (DFRP) for cryogenic use was investigated. The crystallinities and orientation angles of several kinds of polyethylene fibers having different modulus from 15 to 134Gpa (herein after abbreviated to DFs) were measured by NMR and X‐ray. We obtained the parameters of the mechanical series‐parallel model composed of crystal and amorphous by crystallinity and modulus. Thermal expansion coefficients of DFs were estimated by mechanical series‐parallel model. All DFs having different modulus showed negative thermal expansion coefficients in the temperature range from 180 to 300K, and absolute values of those markedly increased by increasing tensile modulus of DF. The estimated thermal expansion coefficients showed negative values, and thermal strains showed a similar curve to observed ones mostly. Average thermal expansion coefficients in the temperature range from 180 to 300K estimated by mechanical model agreed with the observed ones. © 2004 Wiley Periodicals, Inc. J Appl Polym Sci 93: 2918–2925, 2004     

New method for selective growth of diamonds by microwave plasma chemical vapour deposition

Selective nucleation and deposition of diamonds were achieved on an SiO₂-patterned Si substrate. The substrate was pre-treated with an electric field in plasma to introduce diamond nuclei. This treatment did not affect the SiO₂ area. Consequently, diamonds grew only on the area where Si was exposed under the conventional conditions of diamond growth. The maximum nucleation density on the area of SiO₂was about 5 × 10⁷ cm⁻². The ratio of the selectivity was 2 × 10² or higher. This process will be useful and very promising for manufacturing diamond electronic devices.     

Measurement of longitudinal distribution of solids holdup in a three-phase fluidized bed by ultrasonic technique

A method of measurement of solids holdup in a three-phase reactor by analyzing the shape and the phase lag or lead of an ultrasonic wave has been proposed. The solids holdup in a solids-dilute three-phase fluidized bed could be measured without being affected by the presence of gas bubbles. The experimental values of solids axial dispersivity measured by the ultrasonic technique are in reasonable agreement with an empirical correlation of previous data obtained by other methods. The possibility of the application of the ultrasonic technique to the measurement of solids holdup in a three-phase fluidized bed has been suggested.