Preparation of a Near-Infrared Ray Absorption Film from N-Phenylthiocarbamoyl Chitosan Derivative

We recently observed that the decanoylation of N-phenylthiocarbamoyl chitosan (2) with a mixture of decanoic anhydride and pyridine at 60 °C for 24 h afforded N,N-(decanoyl)phenythiocarbamoyl-/2-isothiocynato chitosan decanoate (3b) rather than the expected product N,N-(decanoyl)phenylthiocarbamoyl chitosan decanoate (3a). This result suggested that some of the N,N-(decanoyl)phenylthiocarmbamoyl groups had been converted to isothiocyanate groups during the decanoylation process. The subsequent reaction of compound 3b with aniline gave N,N-(decanoyl)phenylthiocarbamoyl/N-phenylthiocarbamoyl chitosan decanoate (4) in high yield. A solution of compound 4 in CHCl₃ was then added to a solution of copper decanoate (5) in the same solvent, and the resulting mixture was cast onto a glass plate to give a cast film. The film was annealed at 200 °C in an oven to give a greenish film, which showed good near-infrared absorption characteristic in the range of 800–2200 nm.     

Synthesis and luminescence of Sr2CeO4 fine particles

Fine particles of a blue emission phosphor Sr₂CeO₄ have been synthesized using a chemical co-precipitation technique, and the textual and luminescent properties were compared with the one synthesized by the conventional solid-state reaction method. Particle size and distribution of the Sr₂CeO₄ fine powder prepared by the co-precipitation process were smaller and narrower than those obtained by the samples prepared from the conventional one. The emission intensity of the fine particles was equal to that of the larger particles prepared from the solid-state reaction, on the contrary to the general tendency that emission intensity decrease with particle size reduction. Although no Ce³⁺ peaks were observed in EPR measurements, X-ray photoelectron spectra of the samples clearly elucidated the existence of Ce³⁺ only on the surface of Sr₂CeO₄.     

High performance of silicided silicon-sidewall source and drain (S4D) structure

A silicided silicon-sidewall source and drain (S⁴D) structure is proposed for sub-0.1-μm devices. The merit of the S⁴D structure is that the series resistance of the source and drain is significantly reduced since the silicide layer is attached very close to the gate electrode and the silicon sidewall can be doped very highly. Thus, very high drain current drive can be expected, Another advantage of this structure is that the source and drain extensions are produced by the solid-phase diffusion of boron from the highly doped silicon-sidewall. Thus, shallow extensions with very high doping can be realized. A 75-nm gate length pMOSFET fabricated with this structure is shown to exhibit excellent electrical characteristics     

1.3 μm InAsyP1-y-InPstrained-layer quantum-well laser diodes grown by metalorganic chemicalvapor deposition

The authors have fabricated 1.3-μm InAsP-InP separate-confinement-heterostructure (SCH) strained-layer double-quantum-well (SL-DQW) laser diodes (LDs) by metalorganic chemical vapor deposition (MOCVD). A low threshold current density of 410 A/cm ² was obtained. The CW threshold current was as low as 1.8 mA at 20°C, and maximum CW operating temperature of 120°C was obtained. These characteristics are almost the same as those of well-designed GaInAsP-InP SL-QW LDs. Further improvement of the characteristics of InAsP-InP LDs is expected by optimizing the device structure     

Comparison of activities in selective catalytic reduction of NOx by C3H8 over Co/MFI, Fe/MFI, and H/MFI zeolite catalysts

The Co/MFI(SiO₂/Al₂O₃ = 30) were prepared by a precipitation method with NaOCl in alkali solutions exhibited high activities to N₂ at 250 °C for the selective catalytic reduction (SCR) of NO_x. These catalysts showed two UV–vis bands at 700 and 400 nm, indicating the presence of octahedral Co(III) as well as tetrahedral Co(II). The high SCR activity over such Co(III, II)/MFI(30) seems to come from Co(III)---O moieties. The Co(II)MFI(30) catalysts prepared from Co(II)Cl₂ exhibited low SCR activities due to the presence of tetrahedral Co(II) ions in MFI. Less CO formation occurred over Co/MFI catalysts. The Fe/MFI(30) catalyst exhibited high activity due to the presence of some Fe---O species in MFI but more amount of CO were produced during SCR. H/MFI(30) catalyst exhibited a good SCR activity. However, more amount of carbonaceous deposits were produced on it. The correlation between acid concentration and SCR activity was discussed over H/MFIs.     

P-MOSFET's with ultra-shallow solid-phase-diffused drain structureproduced by diffusion from BSG gate-sidewall

A p-MOSFET structure with solid-phase diffused drain (SPDD) is proposed for future 0.1-μm and sub-0.1-μm devices. Highly doped ultrashallow p⁺ source and drain junctions have been obtained by solid-phase diffusion from a highly doped borosilicate glass (BSG) sidewall. The resulting shallow, high-concentration drain profile significantly improves short channel effects without increasing parasitic resistance. At the same time, an in situ highly-boron-doped LPCVD polysilicon gate is introduced to prevent the transconductance degradation which arises in ultrasmall p-MOSFETs with lower process temperature as a result of depletion formation in the p⁺-polysilicon gate. Excellent electrical characteristics and good hot-carrier reliability are achieved     

Color registration error reduction method compensating the influence of belt thickness variation in electrophotographic process

This paper proposes a new belt drive control method for reducing a belt velocity-fluctuation that is caused by a belt thickness-variation in the circumferential direction. A belt driving system performs feedback control with a rotary encoder-output mounted on a driven roller. This proposed method correct the reference value of the feedback control for the purpose of the belt velocity regulation. The correction includes two steps. The first step acquires the encoder-output of the driven roller and calculates the rotational angular velocity-fluctuation with one cycle of the belt rotation. The second step converts from the velocity-fluctuation to the correction value of the feedback reference. The correction value cancels a detection error of the driven roller caused by the belt thickness-variation. After these steps, the belt driving system controls the belt velocity as compensating the belt velocity-fluctuation. Experimental result showed the significant fluctuation reduction on a typical tandem-engine printer.     

Environmental effect on room- temperature ductility of isothermally forged tial- base alloys

Isothermally forged TiAl-base alloys (Al-rich, Mn-containing, and Cr-containing TiAl) were heat-treated in various conditions, and equiaxed grain structures consisting of γ and α₂ or Β phases were obtained. The heat-treated alloys were tensile tested in vacuum and air at room temperature, and the environmental effect on tensile elongation was studied. The ductility of the alloys consisting of equiaxed γ grains and a large amount of α₂ grains was not largely affected by laboratory air, and a decrease in the amount of α₂ grains resulted in a large reduction of ductility in air. The Β phase in the Cr-containing alloy improved the ductility in vacuum, but it resulted in a large reduction of ductility in air. Formerly with Kougakuin University, Shinjyuku-ku, Tokyo, Formerly with National Research Institute for Metals, Meguro-ku, Tokyo,     

Oxidation of Fe (II) in sulfuric acid solutions with dissolved molecular oxygen

The oxidation of Fe(II) with dissolved molecular oxygen was studied in sulfuric acid solutions containing 0.2 mol . dm^-3 FeSO₄ at temperatures ranging from 343 to 363 K. In solutions of sulfuric acid above 0.4 mol . dm^-3, the oxidation of Fe (II) was found to proceed through two parallel paths. In one path the reaction rate was proportional to both [Fe²⁺]² and po₂, exhibiting an activation energy of 51.6 . kJ mol^-1. In another path the reaction rate was proportional to [Fe²⁺]², [SO_4-], and po₂ with an activation energy of 144.6 kJ . mol^-1. A reaction mechanism in which the SO_4- ions play an important role was proposed for the oxidation of Fe(II). In dilute solutions of sulfuric acid below 0.4 mol . dm^-3, the rate of the oxidation reaction was found to be proportional to both [Fe(II)]² and Po₂, and was also affected by [H⁺] and [SO_2- ⁴]. The decrease in [H⁺] resulted in the increase of reaction rate. The discussion was further extended to the effect of Fe (III) on the oxidation reaction of Fe (II).