Rare-earth free sensitizer in NaLuCrF4:Er upconversion material

Upconversion phosphors are known as a material system that can convert near-infrared light into visible/ultraviolet emissions by sequentially absorbing multiple photons. The studies on upconversion materials often use two rare earth (RE) ions as a sensitizer-activator pair. We investigated the influences on luminescence intensity depending on Cr-doping content (x) of hexagonal NaLu_0.98–xCr_xF₄Er_0.02 (x = 0–0.9) upconversion material by substituting Lu³⁺ ions with Cr³⁺in the absence of Gd³⁺. The change in upconversion luminescence intensity appears with saddle-like shape. We suggest that Cr³⁺ ions play the dual role as a constituent in host lattice and a sensitizer in the upconversion process. Optimal conditions for gaining the strongest upconversion emission correspond to x = 0.3–0.5, where there are effective energy transfers between Cr³⁺ and Er³⁺ ions and CrEr dimers. Apart from these values, the emission intensity decreases rapidly which can be ascribed to the absence of multiple-photon absorption for the case of low Cr³⁺ contents, and to the coupling between Cr³⁺ and/or Er³⁺ ions for the case of high Cr³⁺ contents. Magnetization and electron-spin-resonant measurements were performed to understand the correlation between the optical and magnetic properties.     

Universities through the eyes of bibliographic databases: a retroactive growth comparison of Google Scholar,Scopus and Web of Science

Scientometrics - The purpose of this study is to ascertain the suitability of GS’s url-based method as a valid approximation of universities’ academic output measures, taking into...     

An engineering method for complex structural optimization involving both size and topology design variables

This work presents an engineering method for optimizing structures made of bars, beams, plates, or a combination of those components. Corresponding problems involve both continuous (size) and discrete (topology) variables. Using a branched multipoint approximate function, which involves such mixed variables, a series of sequential approximate problems are constructed to make the primal problem explicit. To solve the approximate problems, genetic algorithm (GA) is utilized to optimize discrete variables, and when calculating individual fitness values in GA, a second-level approximate problem only involving retained continuous variables is built to optimize continuous variables. The solution to the second-level approximate problem can be easily obtained with dual methods. Structural analyses are only needed before improving the branched approximate functions in the iteration cycles. The method aims at optimal design of discrete structures consisting of bars, beams, plates, or other components. Numerical examples are given to illustrate its effectiveness, including frame topology optimization, layout optimization of stiffeners modeled with beams or shells, concurrent layout optimization of beam and shell components, and an application in a microsatellite structure. Optimization results show that the number of structural analyses is dramatically decreased when compared with pure GA while even comparable to pure sizing optimization.     

一种PD雷达动目标模拟与微波测控系统

介绍了一种基于PC／104总线，具有GPIB程控功能，采用无内部微波源体制，通过在雷达载频上调制多普勒频率模型目标速度信息，延迟雷达发射机触发脉冲模拟目标距离信息并具有微波功率精确定标与衰减功能的PD雷达动目标模拟与微波测控系统。     

CSTN-LCD用铬版清洗效果的改善

利用铬版清洗机对CSTN-LCD用铬版进行清洗处理,分析了清洗过程中出现的铬层脱落现象,铬层脱落与轴向喷射压力和水平切力密切相关,通过调整转速和喷射压力探索了安全使用条件:在转速不超过1000r/min,喷射压力低于0.5×105Pa的情况下使用铬版清洗机进行清洗是相对安全的。同时采用预清洗处理的方法满足清洁要求,使换线时间由平均3h缩短到平均1h以内,年产能提高270000片。     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

二氧化锡溅射工艺研究

SnO2 是最早使用也是目前使用最广泛的一种气敏材料 ,使用该材料设计制作的气敏传感器具有许多优点。在简要介绍溅射镀膜的成膜过程和特点的基础上 ,着重介绍了SnO2 膜的制备流程 ,分析了功率和温度变化对成膜质量的影响     

改进型遗传算法在加载天线设计中的运用

遗传算法是一种全新的优化搜索方法，可以用来解决各种复杂的实际问题。针对简单型遗传算法的一些不足之处，介绍了一种改进型的遗传算法，并阐述了其在短波宽带集总加载天线优化设计中的运用。     

医用聚氯乙烯材料的表面光接枝改性

研究了在不排氧氛围下 ,紫外光照射 ,以二苯甲酮 (BP)为光引发剂 ,甲基丙烯酸缩水甘油酯(GMA)在医用聚氯乙烯 (PVC)薄膜表面的气相接枝聚合。探讨了反应条件对接枝结果的影响 ,并用正交法指出了影响因素的显著性。用傅立叶红外 (FT- IR)、水接触角作为接枝改性结果的表征。FT- IR谱图表明 GMA已接枝到 PVC膜表面。水接触角由接枝前的 78°下降到 5 4°