Effects of growth temperature and [PH3]/[In(C2H5)3] on purity of epitaxial InP grown by metalorganic chemical vapour deposition

High-purity undoped InP epitaxial layers (ND ? NA = 5 × 1014 cm?3, ?77?105 cm2/Vs) are grown by low-pressure metalorganic chemical vapour deposition. The carrier concentrations decrease and the electron mobilities increase as the growth temperature decreases from 700°C to 575°C and the mole fraction ratios ([PH3]/[In(C2H5)3]) increase from 29 to 290.     

Impact fatigue properties of epoxy resin filled with SiO2 particles

Impact fatigue tests were carried out on epoxy resin filled with SiO₂ particles. The effects of the percentage of SiO₂ particles and the impact cyclic loading frequency on the impact fatigue strength was investigated. The micromechanism of impact fatigue failure was examined and correlated with the morphology of the fracture surface. The impact stress amplitude, σ_t, can be estimated by the formula, σ₂(N_f · Te)^mt = D_t where (N_f· Te) is the cumulative duration time, and mt and D_t, are parameters describing impact fatigue characteristics. The impact fatigue strength and the static strength are governed by the percent of SiO₂ particles. Crack initiation under monotonie cyclic impact loading was attributed to decision of the epoxy-SiO₂ interface. Unstable crack propagation occurs when the crack passes through the SiO₂ particles.     

Erbium-doped GaAs light-emitting diodes emitting erbium f-shellluminescence at 1.54 μm

GaAs light-emitting diodes emitting at 1.54 μm have been fabricated using Er-doped GaAs grown by metal organic chemical vapour deposition, and the output characteristics are reported for the first time. Characteristic emission from the internal 4f-shell transitions of erbium is observed even at room temperature, and the wavelength shifts by less than the measurement resolution of 1 nm over the temperature range from 180 K to 296 K. These results confirm the possibility of fabricating stable light sources using rare earth doped semiconductors