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1.
The gel-to-glass transition in SiO2 xerogels prepared by inorganic sol-gel synthesis was studied. The evolution of the molecular structure is traced using the infrared and lowfrequency Raman spectroscopy methods. The elastic moduli of the samples as well as the pore wall moduli at various stages of heat treatment are determined from the data on Brillouin scattering. The formation of monolithic glass on the macroscopic level manifests itself within a narrow temperature range by the dramatic increase of Young's modulus to the accepted value for fused silica. This phenomenon coincides with structural transformations on the molecular scale: (i) the definite correlation radius (the long-range order sphere) appears; (ii) local distortions of the silica network relax. The presence of structural defects influences the kinetics of vitreous SiO2 formation during xerogel heat treatment.  相似文献   
2.
A new analytical approach for’ micromechanical modeling of the effective viscoelastic behavior of a’ composite material is presented. Fractionexponential operators are. used to describe the viscoelastic properties of the constituents. To construct the corresponding elastic solution, effective field method is used. Effective viscoelastic operators are obtained from the Volter ra’s elasticity-viscoelasticity correspondence principle. Incompatible deformation that often occurs during the manufacturiig process is taken intp account. All the formulas are obtained in explicit ready-to-use form.  相似文献   
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A method for the evaluation of p–n junction cell temperature in PV modules operating in the maximum power point (MPP) mode has been proposed. The method does not require specialized equipment and (for the concentrator modules) the data on the open circuit (OC) voltage temperature coefficients measured under pulse illumination. It consists of measuring several open circuit voltage magnitudes together with temperature measurements on the external module surface near one of the cells. In this procedure, a fast transition from MPP to OC operational mode is carried out, during which a time‐dependent voltage measurement is carried out with the help of a memory oscilloscope. A “reference” OC voltage magnitude in a “cold” module (a condition, as if the cells are kept at ambient temperature) is obtained by calculations, so that there is no necessity in a fast mechanical shuttering of the module aperture area. In the case of the concentrator modules, the module OC voltage temperature coefficient can be measured, if heat sinking process is artificially modified during outdoor measurements. Copyright © 2015 John Wiley & Sons, Ltd.  相似文献   
5.
In this work, a new hybridization of superconducting and ferromagnetic orders is demonstrated, promising for magnonics. By measuring the ferromagnetic and spin wave resonance absorption spectra of a magnetostatically coupled permalloy/niobium bilayer at different temperatures, magnetostatic spin wave resonances with unconventional dispersion are observed. The mechanism behind the modified dispersion, confirmed with micromagnetic simulations, implies screening of the alternating magnetostatic stray fields of precessing magnetic moments in the ferromagnetic layer by the superconducting surface in the Meissner state.  相似文献   
6.
Major scaling issues, which need to be addressed to continue scaling according to Moore’s law, include increase of transistor leakage due to use of thin gate oxide (about 1 nm limit for SiO2), power (reaching 100 W/cm2) and RC delay (dielectric constant limit is 1 for air and Cu resistivity increases with scaling down the feature sizes). Integration of new materials and technologies will allow us to continue scaling and improve device performance. Examples of new materials include high-k dielectrics and strained silicon in the frond end of wafer processing, low-k carbon-doped oxide and electroplated copper in the back end of wafer processing as well as electroplated bumps, high thermal conductivity interface, heat sink and heat spreader materials in packaging. Electrochemical technologies will play an increasingly important role in silicon technology due to low cost, use of self-assembly processing and self-aligned growth ability. New electrochemical technologies in silicon processing include copper electroplating (replaced Al interconnect to reduce RC delay and increase reliability), bump electroplating (replaced wire bonding to allow increased I/O and improve reliability), and porous silicon for silicon on isolator fabrication (to reduce transistor leakage). Copper electroplating allows a low R, an excellent gap fill capability and superior materials properties with (111) textured Cu films and large grain size, and a stable and controlled process.  相似文献   
7.
The use of fluorine as an oxidizing agent in aluminum (Al)-based thermite reactions yields higher peak pressures and an increase in gas production compared with oxygen-containing oxidizers, such as molybdenum trioxide (MoO3). Thus fluorination reactions have the potential to excel in situations that require high pressures and flame speeds. This study compares the combustion behaviors of Al/Teflon, Al/MoO3/Teflon, and Al/MoO3 in an effort to determine the effects that the replacement of oxygen with fluorine has on the reaction dynamics in both open and confined burning configurations. Data were collected from pressure sensors and high-speed imaging. The mass percent of Al was varied from 10 to 90% to study the effects of composition. The composites were then further tested at the optimum stoichiometry using either 50 nm or 1-3 μm Al to examine the effect of Al particle size. The addition of Teflon in an open configuration hinders the reaction due to a loss of liberated gas. Confining the reaction enables the trapped gases to enhance convection, yielding increased flame speeds. For confined conditions, the reactions containing Teflon exhibit higher peak pressures but lower flame speeds than the reactions with MoO3. These results imply that a direct relationship between generated gas pressures and flame speeds does not generally exist when comparing different oxidizers. The theoretically predicted relationship for the relative flame speed versus relative particle size based on the melt-dispersion mechanism agrees with experimental data for all Al particle sizes and for the fluorination reaction. Particle synthesis parameters are suggested that could be controlled to enable micrometer-scale Al particles to achieve the performance of nanoscale Al particles. This is of significant practical importance, because nanoparticles are 30 to 50 times more expensive than the micrometer particles.  相似文献   
8.
The WF (wall failure) test of the EAGLE program, in which 2 kg of uranium dioxide fuel-pins were melted by nuclear heating, was successfully conducted in the IGR (Impulse Graphite Reactor) of NNC/Kazakhstan. In this test, a 3 mm-thick stainless steel (SS) wall structure was placed between fuel pins and a 10 mm-thick sodium-filled channel (sodium gap). During the transient, fuel pins were heated, which led to the formation of a fuel-steel mixture pool. Under the transient nuclear heating condition, the SS wall was strongly heated by the molten pool, leading to wall failure. The time needed for fuel penetration into the sodium-filled gap was very short (less than 1 s after the pool formation). The result suggests that molten core materials formed in hypothetical LMFBR core disruptive accidents have a certain potential to destroy SS-wall boundaries early in the accident phase, thereby providing fuel escape paths from the core region. The early establishment of such fuel escape paths is regarded as a favorable characteristic in eliminating the possibility of severe re-criticality events. A preliminary interpretation on the WF test results is presented in this paper.  相似文献   
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Nickel silicide Schottky diodes formed on polycrystalline Si 〈P〉 films are proposed as temperature sensors of monolithic uncooled microbolometer infrared focal plane arrays. The structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as a multi-phase compound composed of 20% to 40% of Ni3Si, 30% to 60% of Ni2Si, and 10% to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from about 100 to about 20 for the temperature increasing from 22℃ to 70℃; they exceed 1,000 at 80 K. A barrier of around 0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-electromotive force spectra at 80 K and attributed to the Ni silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3%℃ to 0.6%/℃ for forward bias and around 2.5%/℃ for reverse bias of the diodes.  相似文献   
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