Formation of Self-Assembled Sidewall Nanowires on Shallow Patterned GaAs (100)

The formation of "sidewall nanowires" on shallow patterned mesa strips with a modulation depth of only 35 nm on GaAs (100) was demonstrated using molecular beam epitaxy. While self-assembled GaAs sidewall nanowire formation is observed near mesa strips running along [011], relatively thinner AlAs/GaAs layers are formed on identical mesa strips running along [01-1]. Cross-sectional atomic force microscopy (XAFM) on (011) and (01-1) and AFM on (100) are used to understand the formation of the different morphology of the nanostructures, depending on the direction of the mesas. The data indicates that anisotropic surface diffusion of adatoms, resulting from the characteristic (2times4) GaAs (100) surface reconstruction, is responsible for the sidewall nanowire formation and for the different morphology observed along different directions     

Plasma Electrolytic Oxidation of Arc-Sprayed Aluminum Coatings

Different posttreatment methods, such as heat treatment, mechanical processing, sealing, etc., are known to be capable to improve microstructure and exploitation properties of thermal spray coatings. In this work, a plasma electrolytic oxidation of aluminum coatings obtained by arc spraying on aluminum and carbon steel substrates is carried out. Microstructure and properties of oxidized layers formed on sprayed coating as well as on bulk material are investigated. Oxidation is performed in electrolyte containing KOH and liquid glass under different process parameters. It is shown that thick uniform oxidized layers can be formed on arc-sprayed aluminum coatings as well as on solid material. Distribution of alloying elements and phase composition of obtained layers are investigated. A significant improvement of wear resistance of treated layers in two types of abrasive wear conditions is observed. This article is an invited paper selected from presentations at the 2007 International Thermal Spray Conference and has been expanded from the original presentation. It is simultaneously published in Global Coating Solutions, Proceedings of the 2007 International Thermal Spray Conference, Beijing, China, May 14-16, 2007, Basil R. Marple, Margaret M. Hyland, Yuk-Chiu Lau, Chang-Jiu Li, Rogerio S. Lima, and Ghislain Montavon, Ed., ASM International, Materials Park, OH, 2007.     

Numerical Modeling of Grain Boundary Effects in the Diffusional Creep of Copper Interconnect Lines

We propose a numerical simulation technique to model the process of diffusional creep and stress relaxation that occurs in Cu-damascene interconnects of integrated circuit devices in processing stage. The mass flow problem is coupled to the stress analysis through vacancy flux and equilibrium vacancy concentration. The technique is implemented in a software package that seamlessly integrates the problem-oriented code with commercially available finite element program MSC.Marc. It is utilized to model the Coble creep phenomenon by introducing the nanoscale grain boundary region having the thickness on the order of several layers of atoms. As an illustration, the two-dimensional problem of stress relaxation in a single grain subjected to prescribed displacements and tractions is examined.     

Interaction of time-harmonic SH waves with a crack-like inclusion: edge region analysis

Elastodynamic stress concentration near the tips of a crack-like inclusion of finite length generated by the diffraction of high-freqency time-harmonic SH waves is analyzed. It is shown that the stress intensity factors at the tips of inclusion are provided by the fields describing the solution of the static boundary value problem for a semi-infinite strip and edge waves travelling between the two inclusion tips. The solution to the problem is expressed in a closed form that is computationally effective and yields accurate results in the resonance region of dimensionless wave numbers. This revised version was published online in July 2006 with corrections to the Cover Date.     

Enhanced Vertical Charge Transport in a Semiconducting P3HT Thin Film on Single Layer Graphene

The crystallization and electrical characterization of the semiconducting polymer poly(3‐hexylthiophene) (P3HT) on a single layer graphene sheet is reported. Grazing incidence X‐ray diffraction revealed that P3HT crystallizes with a mixture of face‐on and edge‐on lamellar orientations on graphene compared to mainly edge‐on on a silicon substrate. Moreover, whereas ultrathin (10 nm) P3HT films form well oriented face‐on and edge‐on lamellae, thicker (50 nm) films form a mosaic of lamellae oriented at different angles from the graphene substrate. This mosaic of crystallites with π–π stacking oriented homogeneously at various angles inside the film favors the creation of a continuous pathway of interconnected crystallites, and results in a strong enhancement in vertical charge transport and charge carrier mobility in the thicker P3HT film. These results provide a better understanding of polythiophene crystallization on graphene, and should help the design of more efficient graphene based organic devices by control of the crystallinity of the semiconducting film.     

Photoluminescence plasmonic enhancement in InAs quantum dots coupled to gold nanoparticles

Photoluminescence enhancement due to dipole field from gold nanoparticles was observed at 77 K for GaAs capped InAs quantum dots. The gold nanoparticles were coupled to the surface of the cap layer by using dithiol ligands. The enhancement was investigated as a function of the GaAs capped layer thickness. An order of magnitude enhancement in the emission was observed in samples with a cap thickness of 12 nm. This enhancement however is drastically decreased in samples with a cap thickness of 200 nm. The observed enhancement is interpreted in terms of photon scattering from the large dipole scattering cross section.     

Application of Boundary Integral Equations to Elastodynamics of an Interface Crack

We considers application of boundary integral equations to the problem of an interface crack between two elastic half-spaces with different mechanical properties under dynamic loading. The derived system of equations allows evaluation of the displacements at the crack faces, and the traction and the displacements at the interface.