Manganese–Schiff base complex immobilized silica materials for electrocatalytic oxygen reduction

Curtailment of platinum catalysts loading in fuel cell is a recent central issue. As substitutes, these days several organic metal chelate compounds having featured moieties of M–N₄ or M–N₂O₂ (M = transition metal ion) are being used as cathode catalysts in fuel cells. Here, in this study, we report in detail the electrocatalytic activity of manganese–Schiff base complexes for oxygen reduction reaction in 0·05 M HClO₄ at room temperature. Actually, [Mn(salen)]⁺: [N,N′-bis(salicylaldehyde) ethylenediimino manganese(III)]⁺ and [Mn(salophen)]⁺: [N,N′-bis(salicylaldehyde)-1,2-phenylenediimino manganese(III)]⁺ were introduced into/onto the MCM-41 type silica spheres and used for the electrocatalytic reduction of oxygen. Synthesized materials were characterized by UV–Vis, FT–IR and electrochemical techniques. Significant low overpotential for oxygen reduction in 0·05 M HClO₄ on [Mn(salen)]⁺- and [Mn(salophen)]⁺-incorporated silica-modified glassy carbon electrodes was observed.     

Optical,electrical, mechanical,and thermal properties and non-isothermal decomposition behavior of poly(vinyl alcohol)–ZnO nanocomposites

Iranian Polymer Journal - Poly(vinyl alcohol) (PVA) nanocomposites incorporated with ZnO nanofiller were prepared and examined to study the influence of nanofiller on their properties. All the...     

Influence of thickness on nanomechanical behavior of Black Diamond™ low dielectric thin films for interconnect and packaging applications

In the present study, we have investigated the thickness dependence of mechanical properties of the Black Diamond? (SiOC:H, BD, Low-k) films, which are of great interest in current Cu/low-k Back End of the Line (BEOL) interconnect/packaging technologies. For this investigation the BD thin films of six different thicknesses 100, 300, 500, 700, 1,000 and 1,200 nm were deposited on the 8″ Si wafer by using plasma enhanced chemical vapor deposition (PECVD) technique. Nanoindentation and nanoscratch tests of the BD films were performed by using the Nano Indenter^® XP (MTS Corp. USA). In nanoindentation testing of the BD films, significant differences in the elastic modulus of the BD films were observed. In nanoscratch testing, it is found that the critical load (Lc) and scratch width increases as the thickness of the film increases. Cross-sectional analysis of residual nanoindentation impressions was carried out using atomic force microscopy (AFM) to study the deformation behavior. The nanoindentation and nanoscratch responses of the BD thin films of six different thicknesses are different and they are expected mainly due to the molecular reorganization in thin/ultra thin films.     

Dishing and nitride erosion of STI-CMP for different integration schemes

In this paper, we investigate the effects of integration schemes on the STI-CMP performance of two polishers, as well as the influence of consumables and process parameters. The experiment was based on both the blanket-oxide wafers and the patterned wafers processed using 0.18 μm technology. The polishing capability was evaluated, based on the results collected using metrology tools such as Opti-probe, Tencor profiler; atomic force microscope (AFM), and x-ray-scanning electron microscopy (X-SEM) analysis.     

Enhancement of adhesion strength of Cu layer with low dielectric constant SiC:H liners in Cu interconnects

One of the primary candidates for the liner/etch stop layer in damascene process is silicon nitride (Si₃N₄). However, silicon nitride has a high dielectric constant of 7.0. To reduce the effective dielectric constant in Copper (Cu) damascene structure, dielectric SiC:H (prepared by plasma enhanced chemical vapor deposition (PECVD) using trimethylsilane source) as the Cu diffusion barrier was studied. The dielectric constant of SiC:H used is 4.2. A systematic study was made on the properties of liner material and electro-chemically plated (ECP) Cu to enhance the adhesion strength in Cu/low-dielectric constant (k) multilevel interconnects. Though the effects of as Si₃N₄ the liner have been much studied in the past, less is known about the relation between adhesion strength of ECP Cu layer and physical vapor deposited (PVD) Cu seeds, with seed thickness below 1000 Å. The annealing of Cu seed layer was carried out at 200 °C in N₂ ambient for 30 min was carried out to study the impact on adhesion strength and the microstructure evolution on the adhesion between ECP Cu and its barrier layer. In the study, our claim that SiC:H barrier/etch stop layer is essential for replacing conventional Si₃N₄ layer in enhancing adhesion strength and interfacial bonding between Cu/dielectric interconnects.     

Effect of succinonitrile and nano-hydroxyapatite on ionic conductivity and interfacial stability of polyether-based plasticized nanocomposite polymer electrolytes (PNCSPE)

A series of novel plasticized nanocomposite solid polymer electrolytes (PNCSPE) consisting of polyethylene oxide as polymer host, lithium bisoxalatoborate as salt with different weight ratios of succinonitrile and nano-hydroxyapatite was prepared by membrane hot-press technique. The electrical property of PNCSPE was investigated by AC impedance analysis. The migration of lithium ion in the polymer matrix was confirmed from cyclic voltammetry study. The incorporation of different compositions of filler and plasticizer in the polymer matrix significantly enhanced the amorphous nature resulted in increase in ionic conductivity of PNCSPE. The maximum ionic conductivity was found to be in the order of 10^?3.1 S/cm.     

Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique

A top-down approach of forming SiGe-nanowire (SGNW) MOSFET, with Ge concentration modulated along the source/drain (Si_0.7Ge_0.3) to channel (Si_0.3Ge_0.7) regions, is presented. Fabricated by utilizing a pattern-size-dependent Ge-condensation technique, the SGNW heterostructure PMOS device exhibits 4.5times enhancement in the drive current and transconductance (G_m) as compared to the homojunction planar device (Si_0.7Ge_0.3). This large enhancement can be attributed to several factors including Omega-gated nanowire structure, enhanced hole injection efficiency (due to valence band offset), and improved hole mobility (due to compressive strain and Ge enrichment in the nanowire channel).     

Enhanced photocatalytic performance of CuFeO2-ZnO heterostructures for methylene blue degradation under sunlight

One of the strategies to overcome the drawbacks of fast charge recombination of a photocatalyst is to develop semiconductor heterostructures. Herein, we report a two-step precipitation-hydrothermal process to create CuFeO₂-ZnO heterostructures with different weight percentages of CuFeO₂ (0.5, 1, 5, and 10%). Though X-ray diffraction detected the presence of CuFeO₂ on ZnO above 5%, Raman spectroscopy could reveal the presence of CuFeO₂ phase as low as 0.5 wt%. For all of the compositions, the bandgap of ZnO did not vary (3.15 eV) on forming heterostructures with CuFeO₂. The oxidation of methylene blue under sunlight was used to determine the photocatalytic performance of the heterostructures. In comparison to pure ZnO and CuFeO₂, CuFeO₂-ZnO heterostructures exhibited a better photocatalytic efficiency. Overall, 5 wt% CuFeO₂ on ZnO showed 100% degradation with a rate constant of 0.272?±?0.002 min^?1, which is 16 times faster than ZnO. Time-resolved photoluminescence analysis indicated a higher lifespan of charge carriers in the 5wt% CuFeO₂-ZnO heterostructure (32.3 ns) than that of CuFeO₂ (0.85 ns) and ZnO (27.6 ns). The Mott–Schottky flat band potentials of ZnO and CuFeO₂ was determined to be -0.82 and 1.17 eV, respectively, revealing the presence of Type I heterostructures. The heterostructures also showed outstanding recyclability, with a degradation rate of 97% even after four cycles. The current study shows the significance of forming p-type CuFeO₂ and n-type ZnO heterostructures for enhanced photocatalysis.

     

Hydrothermally synthesized ZnO and Z-rGO nanorods: Effect of post-annealing temperature and rGO incorporation on hydrogen sensing

Journal of Materials Science: Materials in Electronics - In this work, hydrogen-sensing characteristics of zinc oxide nanorods and reduced graphene oxide-incorporated zinc oxide nanorods are...     

Adsorptive separation of copper,nickel, lead,zinc and cadmium from aqueous solution using MWCNTs impregnated with D2EHPA and prior to their determination by FAAS: Kinetic and equilibrium studies

Trace metal ions in aqueous samples may be separated and preconcentrated by solid phase extraction (SPE) prior to their determination by flame atomic absorption spectrometry (FAAS). The trace amounts of heavy metals can form complex with D2EHPA – MWCNTs. The quantitative adsorption was at pH 5.0 with a flow rate of 2 mL^?1. The adsorbed metal ions can be eluted with 2.0 mol L^?1 HNO₃. The highest enrichment factor was 25. The thermodynamic parameter (ΔG) revealed that the adsorption was spontaneous. The procedure was applied to the determination of copper, nickel, lead, zinc and cadmium in laboratory water, well water and electroplating wastewater samples.