CO2 Hydrogenation over Ru-NPs Supported Amine-Functionalized SBA-15 Catalyst: Structure–Reactivity Relationship Study

Catalysis Letters - We gave an effective protocol to support Ru NPs on amine-functionalized SBA-15 mesoporous silica to catalyze the CO2 hydrogenation reaction. The amine groups present in the...     

A Contemporary Survey on IoT Based Smart Cities: Architecture,Applications, and Open Issues

Wireless Personal Communications - Internet of Things (IoT) is one of the emerging technologies, which is widely used across the globe. As the idea of a smart city was founded, IoT has been...     

ResearchGate and Google Scholar: how much do they differ in publications,citations and different metrics and why?

ResearchGate has emerged as a popular professional network for scientists and researchers in a very short span. Similar to Google Scholar, the ResearchGate indexing uses an automatic crawling algorithm that extracts bibliographic data, citations, and other information about scholarly articles from various sources. However, it has been observed that the two platforms often show different publication and citation data for the same institutions, journals, and authors. While several previous studies analysed different aspects of ResearchGate and Google Scholar, the quantum of differences in publications, citations, and metrics between the two and the probable reasons for the same are not explored much. This article, therefore, attempts to bridge this research gap by analysing and measuring the differences in publications, citations, and different metrics of the two platforms for a large data set of highly cited authors. The results indicate that there are significantly high differences in publications and citations for the same authors captured by the two platforms, with Google Scholar having higher counts for a vast majority of the cases. The different metrics computed by the two platforms also differ in their values, showing different degrees of correlation. The coverage policy, indexing errors, author attribution mechanism, and strategy to deal with predatory publishing are found to be the main probable reasons for the differences in the two platforms.

     

Middleware Technologies for Smart Wireless Sensor Networks towards Internet of Things: A Comparative Review

Wireless Personal Communications - Internet of Things (IoT) offers complex networks of connected devices, which are used to serve in the real-time environment. Interestingly, Wireless Sensor...     

Ionic liquid-based deep eutectic solvents as novel solvent-cum-catalyst media for thermal dehydrogenation of chemical hydrides

The current work explores the usage of novel synthesized Deep Eutectic Solvent (DES) as a catalyst cum solvent media for the thermal dehydrogenation of chemical hydrides, namely Ammonia Borane (AB) and Ethylene diamine bisborane (EDAB). In the first instance, the quantum chemistry based COSMO-SAC (COnductor like Screening MOdel Segment Activity Coefficient) model was used for the selection of the pertinent solvent. 1-Butyl-3-methylimidazolium methanesulfonate: Imidazole ([BMIM][MeSO₃]:[Im]) turned out to be an ideal eutectic mixture with the highest predicted solubility with amine boranes. The DES was synthesized by combining the Hydrogen Bond Acceptor (HBA), namely 1-Butyl-3-methylimidazolium methanesulfonate and Imidazole as Hydrogen Bond Donor (HBD) at a molar ratio of 1:2 and T = 70 °C. The formation of DES was confirmed by recording the NMR spectra. Further, the thermal dehydrogenation study was performed at a vacuum of 4 × 10^?2 mbar (gauge pressure) of AB/DES and EDAB/DES systems at 105 °C, where a hydrogen equivalent of 1.40 and 2.55 was produced, respectively. The residual samples were further analyzed through ¹H NMR analysis for the reaction mechanism and to confirm the role of Ionic Liquid-based DES as catalyst cum solvent media.     

A simulation study of reduction kinetics for sponge iron production in a rotary hearth furnace

ABSTRACT

A mathematical model has been developed by coupling genetic algorithm (GA) with heat and material balance equations to estimate rate parameters and solid-phase evolution related to the reduction of iron ore-coal composite pellets in a multi-layer bed Rotary hearth Furnace (RHF). The present process involves treating iron ore-coal composite pellets in a crucible over the hearth in RHF. The various solid phases evolved at the end of the process are estimated experimentally, and are used in conjunction with the model to estimate rate parameters. The predicted apparent activation energy for the wustite reduction step is found to be lower than those of the reduction of higher oxides. The thermal efficiency is found to decrease significantly with an increase in the carbon content of the pellet. Thermal efficiency was also found to increase mildly up to three layers. Multilayer bed remains as a potential design parameter to increase thermal efficiency.     

Efficient Design of Bi-circular Patch Antenna for 5G Communication with Mathematical Calculations for Resonant Frequencies

Wireless Personal Communications - In this paper the conventional circular patch has been reshaped by two circular arcs with the FR4 Epoxy material for substrate. This is supported by the...     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs