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1.
A new method is developed for forming shallow emitter/bases, collectors, and graft bases suitable for high-performance 0.3-μm bipolar LSIs. Fabricated 0.5-μm U-SICOS (U-groove isolated sidewall base contact structure) transistors are 44 μm2, and they have an isolation width of 2.0 μm, a minimum emitter width of 0.2 μm, a maximum cutoff frequency (fT) of 50 GHz, and a minimum ECL gate delay time of 27 ps. The key points for fabricating high-performance 0.3-μm bipolar LSIs are the control of the graft base depth and the control of the interfacial layer between emitter poly-Si and single-Si. The importance of a tradeoff relation between fT and base resistance is also discussed  相似文献   
2.
A new semi-static complementary gain cell for future low power DRAM's has been proposed and experimentally demonstrated. This gain cell consists of a write-transistor and its opposite conduction type read-transistor with a heating gate as a storage node which causes a shift in the threshold voltage. This gain cell provides a two orders of magnitude larger cell signal output and higher immunity to noise on the bitlines when compared with a conventional one-transistor DRAM cell without increasing the storage capacitance even at a supply voltage of 0.8 V. The 0.87 μm2 cell size is achieved by using a 0.25 μm design rule with a polysilicon thin-film transistor built in the trench and phase shifted i-line lithography  相似文献   
3.
A PIM–SM-built multicast tree must be restructured when the underlying unicast routing tables change. We describe the PIM–SM recovery mechanisms and evaluate the recovery performance, showing its dependence on a range of network and session parameters. Our results show that a substantial packet loss can be caused by nonreductive, benign events in the network, such as an addition of a new link. We propose and evaluate an improvement to the standard PIM–SM recovery procedure aimed to reduce the packet loss caused by the benign events. Our evaluation shows that the data loss caused by these events can be significantly decreased regardless of the topology and session parameters.  相似文献   
4.
Performances of SAS-super-180 air sampler and settle plates were investigated for the assessment of airborne fungal food contamination. Air samples were taken from processing rooms of a dry-cured production facility and outdoors. Fungal colonies and numbers of species were counted and compared. Quantitatively, the air sampler showed higher numbers of species and mean CFU/plate compared to settle plates. Qualitatively, the two methods showed similar dominating fungal genera and species associated with dry-cured meat products. The study showed settle plates could provide important qualitative information for food processing plants where airborne fungi associated with food products are the targets.  相似文献   
5.
Characterization of steel mill electric-arc furnace dust   总被引:4,自引:0,他引:4  
In order to make a complete characterization of electric-arc furnace (EAF) dust, as hazardous industrial waste, and to solve its permanent disposal and/or recovery, bearing in mind both the volumes formed in the Croatian steel industry and experiences of developed industrial countries, a study of its properties was undertaken. For this purpose, samples of EAF dust, taken from the regular production process in the Zeljezara Sisak Steel Mill between December 2000 and December 2001, were subjected to a series of tests. The chemical composition of EAF dust samples was investigated by means of a several different analytical methods. The results from the chemical analysis show that the approximate order of abundance of major elements in EAF dusts is as follows: Fe, Zn, Mn, Ca, Mg, Si, Pb, S, Cr, Cu, Al, C, Ni, Cd, As and Hg. Granular-metric composition of single samples was determined by applying sieve separation. Scanning electron micro-structural examination of EAF dust microstructure was performed and results indicated that all twelve EAF dusts were composed of solid spherical agglomerates with Fe, Zn, Pb, O, Si and Ca as the principal element. The investigation of grain morphology and the mineralogical composition of EAF dust were taken by combination of high resolution Auger electron spectroscopy (HR AES), X-ray photoelectron spectroscopy (XPS) and X-ray powder diffraction analysis. The analysis of XPS-spectra determined the presence of zinc in the form of ZnO phase and the presence of lead in the form of PbO phase, i.e. PbSO3/PbSO4 forms. The results of the X-ray diffraction phase analysis show that the basis of the examined EAF dust samples is made of a mixture of metal oxides, silicates and sulphates. The metal concentration, anions, pH value and conductivity in water eluates was determined in order to define the influence of EAF dust on the environment.  相似文献   
6.
Seven Croatian Stachys taxa (S. alpina, S. officinalis, S. palustris, S. recta subsp. recta, S. recta subsp. subcrenata, S. salviifolia and S. sylvatica) have been investigated in order to determine their content of biologically active compounds (polyphenols, tannins, phenolic acids and flavonoids) as well as their antioxidant activity. All taxa tested had a high content of total polyphenols, medium content of total phenolic acids, and a rather low content of tannins and flavonoids. The total phenolic acids content correlated significantly with total polyphenols content and the content of polyphenols unadsorbed on hide powder. A low correlation between plant phenolic acids and tannins was observed. Methanolic, ethanolic and dichloromethane extracts were investigated using DPPH, lipid peroxidase and xanthine oxidase assays. The extracts showed no inhibitory effects against lipid peroxidation and xanthine oxidase, but they had the ability to scavenge DPPH. The most effective in the DPPH assay were methanolic extracts of S. recta sub. recta and S. palustris whose radical scavenging activity was higher then that of the reference rutin. A low correlation between radical scavenging capacities of extracts with total flavonoids content was observed. The results indicate that investigated Stachys taxa exhibit potent antiradical activity and therefore could be a potential material for extracting free radical scavengers.  相似文献   
7.
A superconducting field-effect transistors (FET) with a 0.1-μm-length gate electrode was fabricated and tested at liquid-helium temperature. Two superconducting electrodes (source and drain) were formed on the same Si substrate surface with an oxide-insulated gate electrode by a self-aligned fabrication process. Superconducting current flowing through the semiconductor (Si) between the two superconducting electrodes (Nb) was controlled by a gate-bias voltage  相似文献   
8.
Summary The reactivity ratios k1c/k1c and k2c/k21 in the copolymerization of phenylvinyl sec-butyl ether (M2) and maleic anhydride (M1) were calculated by applying the generalized model described by Shirota and coworkers. It was found that under the experimental conditions applied in our work, the copolymerization proceeds predominantly through the participation of charge-transfer complex monomers.Dedicated to Prof. C.I. Simionescu in honor of this 60th birthday  相似文献   
9.
Miscibility in blends of random copolymers of p-bromostyrene (pBrSt) and o-bromostyrene (oBrSt) [P(pBrSt-co-oBrSt)] with partially sulfonylated poly(2,6-dimethyl-1,4-phenylene oxide) (SPPO) have been studied by differential scanning calorimetry (DSC). For an SPPO of given degree of sulfonylation, a miscibility window in terms of the isomeric composition of the brominated copolymer was seen; the location and width of the window was a function of sulfonylation. In general, copolymers with a higher content of pBrSt exhibit miscibility with SPPOs with higher degrees of sulfonylation. Upon annealing to temperatures of 280° and 320°C, only small changes in the miscibility regime were observed. The miscibility behavior was analyzed on the basis of the mean-field theory in terms of the individual segmental interaction parameters. © 1994 John Wiley & Sons, Inc.  相似文献   
10.
The gate-drain overlapped device (GOLD) structure is proposed to achieve high reliability and high performance in deep submicrometer MOSFETs. The GOLD device concept is different from that of drain-engineering methods such as the double-diffused drain (DDD) and lightly doped drain (LDD). GOLD eliminates the tradeoff between transconductance and breakdown voltage (hot-carrier, drain sustaining). The overlap effect of the GOLD devices is discussed using simulation and experiment. GOLD has a gate structure using a native oxide film (5-10 A) to obtain an overlapped fine structure. The process is also compatible with conventional LDD processes and is suitable for 0.3-0.5-μm-design-rule devices at 5-V operation, and 3-V operation  相似文献   
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