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1.
The present paper includes experimental and analytical data on the fracture properties of a nickel-iron superalloy, a ferromagnetic austenite, at 4 K in magnetic fields of 0 and 6 T. The tensile, notch tensile and small punch tests are employed. A finite element analysis is also performed to convert the experimentally measured load-displacement data into useful engineering information. To interpret the results we review the available theory of the influence of magnetic field on the stress intensity factor for a crack in ferromagnetic materials.  相似文献   
2.
We describe a CMOS multichannel transceiver that transmits and receives 10 Gb/s per channel over balanced copper media. The transceiver consists of two identical 10-Gb/s modules. Each module operates off a single 1.2-V supply and has a single 5-GHz phase-locked loop to supply a reference clock to two transmitter (Tx) channels and two receiver (Rx) channels. To track the input-signal phase, the Rx channel has a clock recovery unit (CRU), which uses a phase-interpolator-based timing generator and digital loop filter. The CRU can adjust the recovered clock phase with a resolution of 1.56 ps. Two sets of two-channel transceiver units were fabricated in 0.11-/spl mu/m CMOS on a single test chip. The transceiver unit size was 1.6 mm /spl times/ 2.6 mm. The Rx sensitivity was 120-mVp-p differential with a 70-ps phase margin for a common-mode voltage ranging from 0.6 to 1.0 V. The evaluated jitter tolerance curve met the OC-192 specification.  相似文献   
3.
The third-order nonlinear optical susceptibilities, X(3), of TeO2-based glasses containing transition metal oxides (M = Sc2O3, TiO2, V2O5, Nb2O5, MoO3, Ta2O5, and WO3) glasses have been measured by the third harmonic generation (THG) method in order to investigate the effect of the empty d-orbital contributions to the third-order nonlinear optical susceptibilities. It is found that the addition of TiO2, Nb2O5, and WO3 to TeO2 glass increases the X(3) value as well as the refractive index, while others decrease both of them. The positive effect of the TiO2, Nb2O5, or WO3, on the X(3) of TeO2 glass was interpreted in terms of the cationic empty d-orbital contribution. There is an almost linear relation between the X(3) and the term (n2ω+ 2)3.(n2ω -1).Ed/E20 containing three measurable parameters only, irrespective of the kinds of MO, which was derived based on the bond orbital theory developed by M. E. Lines. The largest X(3) value obtained is 1.69 × 10−12 esu for 30NbO2.5.70TeO2 glass, about 60 times larger than that of pure fused silica glass.  相似文献   
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Using a newly devised model of dural sinus occlusion, we investigated the pathophysiology of venous haemorrhage as well as venous circulatory disturbance. The superior sagittal sinus (SSS) and diploic veins (DV) were occluded in 16 cats. Intracranial pressure (ICP), cerebral blood volume (CBV) and regional cerebral blood flow (rCBF) were measured for 12 hours after the occlusion. At the end of the experiment, cerebral water content was estimated. In another 8 cats additional occlusions of cortical veins were carried out. In both groups, the blood-brain barrier permeability was evaluated with Evans blue or horseradish peroxidase. The SSS and DV occlusion produced a significant increase in ICP and CBV concomitant with a significant decrease in rCBF. Cerebral water content also increased significantly. However, there was no transition of Evans blue and horseradish peroxidase through the cerebral vessels, and no haemorrhages could be observed. In contrast, the additional occlusion of cortical veins produced haemorrhagic infarctions with Evans blue extravasation in 6 out of the 8 cats. These data suggest that dural sinus occlusion may lead to an increase in CBV and cerebral water content resulting in intracranial hypertension and decreased rCBF. The brain oedema in this model seemed to be mainly hydrostatic oedema, and might also be contributed by cytotoxic oedema. The additional occlusion of cortical veins might be essential in the development of haemorrhage in this model, and the blood-brain barrier was also disrupted in these areas.  相似文献   
7.
This study deals with the impact property and damage tolerance of matrix hybrid composite laminates with different laminate constitution. The matrix hybrid composite laminates consisted of the laminae with a conventional epoxy resin and the laminae with a flexible epoxy resin modified from the conventional resin to avoid the interlaminar delamination. The impact energy absorption ratio greatly depended on the matrix resin placed at the impact face. The energy absorption was almost constant if the conventional resin was placed at the impact surface layer, while it increased exponentially with the increasing fraction of the flexible resin if the flexible resin was placed at the impact face. The impact energy was absorbed by the damage development and propagation in the laminate with conventional resin laminae as the impacted face, while it was absorbed by both the recoverable deformation of the flexible resin and the damage propagation in the laminate with flexible resin laminae as the impacted face.  相似文献   
8.
Ohmic contacts of Au/Pd/Ti/Ni to p-ZnTe show a minimum specific contact resistance of 10-6 Ωcm2 for a p-type doping level of 3×1019 cm-3 and at an annealing temperature of 300°C. The Ni and Ti layers are very effective in improving the electrical properties of these contact  相似文献   
9.
Ti1−xVxO2 solid solution film photoelectrodes were prepared by the dip-coating sol–gel method. X-ray diffraction and X-ray photoelectron spectroscopy were employed to ensure the formation of the solid solution and their composition. Obvious photoresponses were observed in the visible region for the solid solution film electrodes with x0.05 and the red shift of the photoresponse was enhanced with increasing x. Moreover, the solid solution film electrodes were found to be photoelectrochemically stable. However, the onset potential of photocurrent shifted positively with increasing x. Band model of the solid solution was suggested to explain the effects of the vanadium incorporation on the photoelectrochemical properties.  相似文献   
10.
A new semi-static complementary gain cell for future low power DRAM's has been proposed and experimentally demonstrated. This gain cell consists of a write-transistor and its opposite conduction type read-transistor with a heating gate as a storage node which causes a shift in the threshold voltage. This gain cell provides a two orders of magnitude larger cell signal output and higher immunity to noise on the bitlines when compared with a conventional one-transistor DRAM cell without increasing the storage capacitance even at a supply voltage of 0.8 V. The 0.87 μm2 cell size is achieved by using a 0.25 μm design rule with a polysilicon thin-film transistor built in the trench and phase shifted i-line lithography  相似文献   
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