Thermal response in thermal energy storage material around heat transfer tubes: effect of additives on heat transfer rates

The effects of carbon-fiber chips and carbon brushes as additives on the thermal conductivity enhancement of phase change materials (PCMs) using in latent heat thermal energy storage are investigated experimentally and numerically by considering the wall effect of the additives. The carbon-fiber chips are effective for improving the heat transfer rate in PCMs. However, the thermal resistance near the heat transfer surface is higher than that for the carbon brushes. As a result, the overall heat transfer rate for the fiber chips is lower than that for the carbon brushes. Consequently, the carbon brushes are superior to the fiber chips for the thermal conductivity enhancement under the present experimental conditions. The carbon brushes are moreover applied to the packed beds of particles to overcome their low thermal conductivity in chemical heat pump/storage. The carbon brushes essentially improve the heat transfer characteristics in the packed beds, though the thermal resistance is observed because the particles obstruct contact between the fibers and the heat transfer surfaces.     

Non-linear current–voltage characteristics related to native defects in SrTiO3 and ZnO bicrystals

SrTiO₃ and ZnO bicrystals with various types of boundaries were fabricated in order to examine their current–voltage characteristics across single grain boundaries. Their grain boundary structures were also investigated by high-resolution transmission electron microscopy. In Nb-doped SrTiO₃, electron transport behaviors depend on the type of boundaries. Random type boundaries exhibit highly non-linear current–voltage characteristics, while low angle boundaries show a slight non-linearity. On the contrary, undoped ZnO does not exhibit non-linear current–voltage characteristics in any type of boundaries including random ones. It is suggested that the differences observed in current–voltage properties between the two systems are mainly due to the difference in the accumulation behavior of acceptor-like native defects at grain boundaries. A clear non-linearity is obtained by means of Co-doping even for the highly coherent Σ1 boundary in a ZnO bicrystal. This is considered to result from the production of acceptor-like native defects by Co-doping.     

Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs

We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO₃(ZnO)_m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 10⁵. The field-effect mobility increased from ∼1 to ∼10 cm² (V s)⁻¹ as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds.     

A scheme of picosecond pulse shaping using gain saturationcharacteristics of semiconductor laser amplifiers

To obtain high power, well shaped picosecond pulses from gain-switched semiconductor lasers, the use of dynamic gain saturation characteristics of semiconductor laser amplifiers was investigated theoretically and experimentally. A configuration of a reflected-wave amplifier (RWA) with single-side external coupling is introduced for pulse shaping, which is found to be suitable for enhancing dynamic gain saturation. By a combination of a distributed feedback laser oscillator at 1.3 μm in wavelength and a reflected-wave amplifier of 400 μm cavity length with asymmetric facet reflectivities of 0.01% and 30%, single-mode optical pulses with almost no tailing, full width at half maximum of 15 ps, and peak power exceeding 50 mW were obtained without pulse broadening, despite the considerable tail structure of the incident pulse     

Micro-computerized tomographic observation of the spinning apparatus in Bombyx mori silkworms

Silkworms and spiders have evolved complex spinning apparatus thought to use highly controlled conditions to optimize protein folding and crystallization to provide a tough fiber. Accordingly, the structure and function of the natural spinning apparatus has been studied with great attention as an interesting piece of biological engineering with potential for mimicry in an industrial process. However it is still not well understood. Here we used Micro-Computerized Tomographic equipment (mCT) to visualize the three-dimensional structure of the spinning apparatus in Bombyx mori silkworms. Multidirectional tomograms obtained by X-ray radioscopy provided valuable information on the detailed arrangement of each muscle of the silk press. It is suggested that the duct in the silk press part plays a part as an extrusion die whose cross-sectional area can be controlled by muscles to optimize applied stresses in the partially gelled silk within its lumen.