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排序方式: 共有610条查询结果,搜索用时 15 毫秒
1.
Takayuki Honma Yuichiro Kuroki Tomoichiro Okamoto Masasuke Takata Yukihiro Kanechika Masanobu Azuma Hitofumi Taniguchi 《Ceramics International》2008,34(4):943-946
Aluminum nitride ceramics were prepared by sintering with 0–4.8 mass% of Ca3Al2O6 (C3A) as a sintering additive. The transmittance in the range of 260–550 nm increased with increasing amount of C3A. The cathodoluminescence intensity attributed to oxygen-induced defects decreased with increasing amount of C3A. From the results, the increase of the transmittance in the range of 260–550 nm was considered to be related to the decrease of the oxygen-induced defect density. 相似文献
2.
3.
Akihiko Nagata Osamu Izumi Kōshichi Noto Hiroshi Hirayama 《Journal of Materials Science》1978,13(4):731-738
The dilute Cu-Nb-Sn alloys containing small amounts of Nb and Sn less than 1 at % exhibited superconductivity after quenching from the liquid state and ageing. The best superconducting properties (
andJ
c=130 A cm–2) in a Cu-0.30 at % Nb 0.15 at % Sn alloy were obtained when the sample was aged at 550° C for 384 h. This sample exhibited a structure of fine Nb3Sn precipitates of 200 to 500Å diameter distributed homogeneously in the Cu matrix, and therefore it was concluded that superconductivity in these alloys resulted from the proximity effect of Nb3Sn particles. In spite of the similar structure obtained by ageing at 800° C, the Cu-Nb-Sn alloys showed inferior superconducting properties compared to the Cu-0.4 at % Nb alloy and this would be explained qualitatively by the difference in the mean free path in the two alloys. 相似文献
4.
5.
Hirayama K. Honma Y. Hayashi Y. Koshiba M. 《Photonics Technology Letters, IEEE》1998,10(10):1359-1361
A novel finite-element formulation for the analysis of the energy levels of a two-dimensional quantum cavity in a magnetic field is proposed. Our formulation is based on both a variational and Galerkin methods which, when combined with a finite-element method, lead to eigenvalue problems characterized by either real or Hermitian matrices contrary to algorithms proposed in the past. These eigenvalue problems can then be solved quite efficiently on a computer using standard library packages. Also, it is confirmed that the results obtained here are independent of the choice of gauge 相似文献
6.
Hiroaki Nakamura Naomichi Hatano Ryōen Shirasaki Naomi Hirayama Kenji Yonemitsu 《Journal of Electronic Materials》2011,40(5):601-605
We consider thermoelectric effects in a pseudo-one-dimensional electron gas (P1DEG) with a spin–orbit interaction (SOI). The
SOI splits the dispersion relation of the P1DEG into subbands with an energy gap. We find quantum oscillations in transport
coefficients, which coincide with the locations of the subband edges, as a function of the electrochemical potential. 相似文献
7.
High pressure oxidation of silicon was performed at an oxidation temperature range of 650 to 800°C for thin oxide films with about 300 å thickness. The index of refraction was dependent on an oxidation temperature but independent of the oxidation pressure as 1.475 at 750°C. The dielectric breakdown strength of the oxide film was measured by the voltage ramping,method. The fixed oxide charge about 1.0 × 1011 cm?2 was also measured from the high frequency C-V measurement. The pulse scanning C-V measurement technique was used to measure the minority carrier generation rate in the depleted surface. The surface generation velocity was slightly dependent on the oxidation temperature and indicated that the fast surface states increased with decreasing oxidation temperature. 相似文献
8.
A new milling technique based on a focused ion beam (FIB) microsampling system is proposed to avoid the curtaining effect, commonly occurring in other FIB milling methods, in order to obtain a crosssectional device specimen with uniform thickness can be obtained for electron holographic observation. 相似文献
9.
Yamanouchi S. Aoki Y. Kunihiro K. Hirayama T. Miyazaki T. Hida H. 《Microwave Theory and Techniques》2007,55(3):493-503
This paper presents a dynamic predistorter (PD), which linearizes the dynamic AM-AM and AM-PM of a wideband code division multiple access handset power amplifier (PA). The dynamic PD allows an adjacent channel leakage power ratio (ACPR) improvement of 15.7 dB, which is superior to conventional PDs that linearize static AM-AM and AM-PM. The dynamic PD was designed using an HBT generating nonlinearity, a short circuit at the baseband (les4 MHz), and a load circuit for the HBT at the RF fundamental band (ap1.95 GHz). Volterra-series analysis was performed to understand the mechanism of the dynamic PD. The analysis revealed that the short circuit at the baseband enabled the dynamic PD generating third-order intermodulation distortion (IMD3) with opposite phase to the fundamental tone (i.e., antiphase IMD3). The antiphase IMD3 allows dynamic gain compression, which linearizes the dynamic gain expansion of a PA with low quiescent current. The analysis also revealed that the IMD3 amplitude of the dynamic PD can be adjusted by load impedance at the RF fundamental band, which enables the gradient of dynamic AM-AM and AM-PM to be optimized to linearize the PA. The fabricated two-stage InGaP/GaAs HBT PA module with the dynamic PD exhibited an ACPR of -40 dBc and a power-added efficiency of 50% at an average output power of 26.8 dBm with a quiescent current of 20 mA 相似文献
10.
A miniaturized scanning tunnelling microscope (STM) was fitted in a side-entry holder of an ultra-high vacuum electron microscope. The clean Si(111)7 x 7 surface was observed by both STM and reflection electron microscopy (REM) at atomic resolution. The tungsten tips were often rounded off upon tip-approach with a constant current, through a gentle touch with the sample surface. The apices of such rounded tips had radii of several tens of granometre with widths of about 3 x 3 nm. Atomically resolved STM of the Si(111)7 x 7 surface was obtainable when an atom or an atomic cluster sits on the tip surface. The rounded tips were used for fabrication of Si nanowires by the touch-and-away operation of the tip. The nanowires grew longer at higher substrate temperature and they reached as long as several tens of nanometre at 700 degrees C. The nanowire had many twins and the (111) twin lamellae were stacked in the direction of the wire axis. In another case, the twin planes were oblique to the wire axis so that the (112) direction was nearly parallel to the wire axis. 相似文献