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The residual damage is analysed by transmission electron microscopy (TEM) for BF2+, F+ + B+ and Ar+ + B+ implanted silicon after rapid thermal annealing(RTA). And the reverse leakage current of the implanted diodes is measured using a FJ-356 electrometer. The results show that 1 ) The residual damage due to BF2+ implantation is less than that of F+ + B + and Ar++ B+ implantation. 2) The reverse leakage current of BF2+ implanted diodes is less than that of F+ + B+ and Ar++ B + implanted diodes. 3) The reverse leakage current of F++B+ and Ar++ B+ implanted diodes increases with the increase of F+ and Ar+ energies, respectively. Therefore the physical behaviour of the interaction between molecular ion and silicon is different from that of the interaction between individual atom ion and silicon. 相似文献
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本文借助背散射沟道分析技术系统地研究了Be离子注入InSb快速热退火后的剩余损伤,采用俄歇电子能谱仪分析了InSb表层组分的化学配比,并对背散射分析的结果进行了详细的讨论。 相似文献
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采用BF401L气态钎剂配合BCu62zn钎料钎焊汽车驾驶室,简化了生产工序,改善了工艺条件,提高了工效及生产能力。 相似文献
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采用一种新型的刻蚀气体——HBr+He作为反应离子刻蚀气体,用SiO2作为刻硅槽的掩膜,在8~13Ω·cmP型(100)硅片上,刻出槽宽1.2μm,槽深0.8μm的硅深槽,并对HBr反应离子刻蚀硅的高度各向异性以及刻蚀过程中产生的“宽度”效应和“黑硅”现象进行了分析. 相似文献
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