排序方式: 共有3条查询结果,搜索用时 0 毫秒
1
1.
浅谈建筑节能及发展前景 总被引:3,自引:3,他引:0
通过对国内建筑能耗和节能情况的分析并概述建筑节能的重要意义,进行了国外建筑节能现状的研究,进而提出我国建筑节能的发展前景,从而真正实现建筑节能的目的。 相似文献
2.
以桑黄裂蹄针层孔菌(Phellinus linteus)为研究对象,采用6 种溶剂对其进行提取,对提取物中多酚和麦角甾醇的含量进行测定,并对每种溶剂提取物的体外抗氧化和α-葡萄糖苷酶抑制活性进行分析。结果表明:乙醇提取物的多酚含量最高为(3.03±0.27)mg GAE/g DW。乙醇、丙酮和乙酸乙酯提取物麦角甾醇含量相当且显著高于其他溶剂提取物。乙醇提取物具有最高的DPPH 自由基、ABTS+自由基清除能力[IC50 分别为(23.37±0.83)、(78.42±1.28)μg/mL]、铁还原能力[(50.05±1.90)mmol/g]和α-葡萄糖苷酶抑制活性[IC50 为(13.95±0.79)μg/mL)]。相关性分析表明桑黄裂蹄针层孔菌的多酚含量与其ABTS+自由基清除能力、铁还原能力和α-葡萄糖苷酶抑制活性间具有显著相关性(p<0.05),且相互协同的酚酸类物质是潜在的功能成分。 相似文献
3.
Ag/La_(0.5) Mg_(0.5) MnO_3/p~+-Si resistance switching device for nonvolatile memory application was fabricated by sol-gel method. The thickness effects of La_(0.5) Mg_(0.5) MnO_3(LMMO) films on current-voltage(I-V) characteristics, resistance switching behaviour and endurance characteristics of Ag/LMMO/p~+-Si device were investigated. The same crystallisation and phase structure were confirmed in the LMMO films with increased film thickness. The Ag/LMMO/p~+-Si device exhibits the typical bipolar resistive switching behaviour. As the LMMO thickness and the stable repetition switching cycle numbers increase, VSet, and VReset of the device will increase, but the RHRS/RLRS will decrease. The Ag/LMMO/p~+-Si device with 165 nm thick LMMO films exhibit the best performance, in which the RHRS/RLRS exceeds 10~4 for 1 000 switching cycles, and its degradation is invisible for more than 10~6 s. 相似文献
1