耐高温抗高真空钢管内衬PTFE抗腐蚀管道

简述了耐高温抗全真空钢管内衬PTFE抗腐蚀管道的制备、性能。     

Preparation of LPE GaInAsSb Epilayers and Its Photodiodes for Detection of 1．8～2．1μm

ＰｒｅｐａｒａｔｉｏｎｏｆＬＰＥＧａＩｎＡｓＳｂＥｐｉｌａｙｅｒｓａｎｄＩｔｓＰｈｏｔｏｄｉｏｄｅｓｆｏｒＤｅｔｅｃｔｉｏｎｏｆ１．８～２．１μｍＸｕＣｈｅｎｍｅｉ；ＰｅｎｇＲｕｉｗｕ；ＷｅｉＧｕａｎｇｙｕ；ＷｕＷｅｉａｎｄＬｉＣｕｉｙｕｎ（徐晨梅）...     

Preparation of Ga_(1-x)In_xAs_(1-y)Sb_y by MOCVD

The GalnAsSb quaternary alloys for 2～4 μm long wavelength optoelectronics have been prepared byMOCVD.The growth of buffer layers and the employment of GaSb/GaAs and GaSb/GaSb hybridsubstrates are mentioned,which effectively improve the properties of GalnAsSb epilayers.In order to controlthe epitaxial growth of GaSb and GalnAsSb,emphasis is given on the deposition rates,growth temperaturesand the relationship between growth conditions and the distribution coefficients of In and Sb.The experimen-tal solid compositions in this work are predicted by the thermodynamic calculations.Whether the growth ofGalnAsSb epilayers is controlled by chemical reactions or by mass diffusions depends on growth temperatures.This argument is verified by kinetic considerations.The FWHMs of the DCXD (double crystal X-raydiffraction)spectra of GalnAsSb epilayers grown on GaSb/GaSb and GaSb/GaAs hybrid substrates areabout 200～300 arcsec and 800 arcsec respectively.The unintentionally doped GalnAsSb epilayers have themobilities of μp=100～240 cm~2/V·s at 300 K.The corresponding wavelength ofMOCVD GaInAsSb alloysis calculated from EPMA(electronic probe microanalysis)data and determined by FTIR(Fourier transformedinfrared spectroscopy)measurement.     

Growth and Characterization of AIGaAsSb by MOCVD

ＧｒｏｗｔｈａｎｄＣｈａｒａｃｔｅｒｉｚａｔｉｏｎｏｆＡＩＧａＡｓＳｂｂｙＭＯＣＶＤＷｕＷｅｉ；ＰｅｎｇＲｕｉｗｕａｎｄＷｅｉＧｕａｎｇｙｕ（吴伟）（彭瑞伍）（韦光宇）ＳｈａｎｇｈａｉＩｎｓｔｉｔｕｔｅｏｆｍｅｔａｌｌｕｒｇｙ，ＣｈｉｎｅｓｅＡｃａｄ...     

MOCVD法生长Ga_(l-X)In_xAs_(l-y)Sb_y的物化研究

为更好地控制MOCVD Ⅲ-Ⅴ族锑化物的生长,改进外延层性质,本文用物理化学方法研究了Ga_(1-x)In_xAs_(1-y)Sb_y合金的生长过程。用热力学的“平衡模型”计算了铟和锑的分配系数及外延层固相组成与生长条件的关系,用化学动力学方法推导了当外延过程为物质扩散控制、化学反应控制及混合控制时的外延层生长速率公式,结果均符合实验规律。     

Ⅲ-V 族锑化物半导体材料

本文总结了Ⅱ-Ⅴ族锑化物半导体材料的进展,其中包括生长的物理化学原理和主要工艺,介绍了主要的锑化物体单晶、薄膜和结构材料,并列举了它们的性质以及这些材料应用于光电器件方面的最新结果.     

半导体外延材料导电类型及载流子浓度的简易判定法

本文利用金属—半导体接触的基本理论,发展了一种炉前简易判别化合物半导体外延层导电类型和载流子浓度范围的方法,其准确率为:GaAs和GaInP达100％,GaInAsSb可达90％左右。