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排序方式: 共有1066条查询结果,搜索用时 125 毫秒
1.
Increasing the reaction temperature of the living cationic polymerization of isobutylene is crucial for industrial production due to the cost of refrigeration. The reaction temperature increase was achieved with an accelerated reaction rate using a flow reaction system. The polymerization conditions, including the flow reactor design, were based on the results of kinetic studies. Utilizing a milli‐scale flow reactor, polyisobutylene, which has a narrow molecular weight distribution, was obtained within a considerably short residence time at a high temperature. Furthermore, it was confirmed that the value of Mw/Mn correlates with the product of the Reynolds number and the angle of collision. 相似文献
2.
Vassiliou I. Vavelidis K. Georgantas T. Plevridis S. Haralabidis N. Kamoulakos G. Kapnistis C. Kavadias S. Kokolakis Y. Merakos P. Rudell J.C. Yamanaka A. Bouras S. Bouras I. 《Solid-State Circuits, IEEE Journal of》2003,38(12):2221-2231
The drive for cost reduction has led to the use of CMOS technology in the implementation of highly integrated radios. This paper presents a single-chip 5-GHz fully integrated direct conversion transceiver for IEEE 802.11a WLAN systems, manufactured in 0.18-/spl mu/m CMOS. The IC features an innovative system architecture which takes advantage of the computing resources of the digital companion chip in order to eliminate I/Q mismatch and achieve accurately matched baseband filters. The integrated voltage-controlled oscillator and synthesizer achieve an integrated phase noise of less than 0.8/spl deg/ rms. The receiver has an overall noise figure of 5.2 dB and achieves sensitivity of -75 dBm at 54-Mb/s operation, both referred to the IC input. The transmit error vector magnitude is -33 dB at -5-dBm output power from the integrated power-amplifier driver amplifier. The transceiver occupies an area of 18.5 mm/sup 2/. 相似文献
3.
A low threshold current density of ~100 A/cm2 has been obtained at 1.55 μm using a graded-index separate-confinement-heterostructure strained InGaAsP single-quantum-well laser. The design of the laser structure is based on results calculated from the viewpoint of effective carrier injection into the well 相似文献
4.
Yamanaka N. Kawano R. Oki E. Yasukawa S. Okazaki K. 《Advanced Packaging, IEEE Transactions on》2002,25(1):65-72
A 640-Gb/s high-speed ATM switching system that is based on the technologies of advanced MCM-C, 0.25-μm CMOS, and optical wavelength-division-multiplexing (WDM) interconnection is fabricated for future broadband backbone networks. A 40-layer, 160×114 mm ceramic MCM forms the basic ATM switch module with 80-Gb/s throughput. It consists of 8 advanced 0.25-μm CMOS LSIs and 32 I/O bipolar LSIs. The MCM has a 7-layer high-speed signal line structure having 50-Ω strip lines, high-speed signal lines, and 33 power supply layers formed using 50-μm thick ceramic layers to achieve high capacity. A uniquely structured closed-loop-type liquid cooling system for the MCM is used to cope with its high power dissipation of 230 W. A three-stage ATM switch is made using the optical WDM interconnection between high-performance MCMs. For WDM interconnection, newly developed compact 10-Gb/s, 8-WDM optical transmitter and receiver modules are used. These modules are each only 80×120×20 mm and dissipate 9.65 W and 22.5 W, respectively. They have a special chassis for cooling, which contains high-performance heat-conductive plates and micro-fans. An optical WDM router based on an arrayed waveguide router is used for mesh interconnection of boards. The optical WDM interconnect has 640-Gb/s throughput and simple interconnection 相似文献
5.
Zengyun Jian Kosuke Nagashio Kazuhiko Kuribayashi 《Metallurgical and Materials Transactions A》2002,33(9):2947-2953
Using an electromagnetic levitation facility with a laser heating unit, silicon droplets were highly undercooled in the containerless
state. The crystal morphologies on the surface of the undercooled droplets during the solidification process and after solidification
were recorded live by using a high-speed camera and were observed by scanning electron microscopy. The growth behavior of
silicon was found to vary not only with the nucleation undercooling, but also with the time after nucleation. In the earlier
stage of solidification, the silicon grew in lateral, intermediary, and continuous modes at low, medium, and high undercoolings,
respectively. In the later stage of solidification, the growth of highly undercooled silicon can transform to the lateral
mode from the nonlateral one. The transition time of the sample with 320 K of undercooling was about 535 ms after recalescence,
which was much later than the time where recalescence was completed. 相似文献
6.
Mingjun Li Kosuke Nagashio Ph.D. Kazuhiko Kuribayashi 《Metallurgical and Materials Transactions A》2002,33(8):2677-2683
A mullite (3Al2O3·2SiO2) sample has been levitated and undercooled in an aero-acoustic levitator, so as to investigate the solidification behavior
in a containerless condition. Crystal-growth velocities are measured as a function of melt undercoolings, which increase slowly
with melt undercoolings up to 380 K and then increase quickly when undercoolings exceed 400 K. In order to elucidate the crystal
growth and solidification behavior, the relationship of melt viscosities as a function of melt undercoolings is established
on the basis of the fact that molten mullite melts are fragile, from which the atomic diffusivity is calculated via the Einstein-Stokes equation. The interface kinetics is analyzed when considering atomic diffusivities. The crystal-growth
velocity vs melt undercooling is calculated based on the classical rate theory. Interestingly, two different microstructures are observed;
one exhibits a straight, faceted rod without any branching with melt undercoolings up to 400 K, and the other is a feathery
faceted dendrite when undercoolings exceed 400 K. The formation of these morphologies is discussed, taking into account the
contributions of constitutional and kinetic undercoolings at different bulk undercoolings. 相似文献
7.
8.
E Kobayashi Y Yoshida A Fujimura T Yamanaka H Endo T Hamamoto Y Kagawa 《Canadian Metallurgical Quarterly》1997,24(12):1775-1777
We studied the in vivo gene transfusion using a gene gun, formerly used in plants and culture cells. The hand-held type gene gun (Helios Gene Gun System) is simple and convenient for effective gene transfection in living animals. This method has some advantages in that there is no need for use of viral vector, independence on the cell cycle and local inducement of plural genes. There is a great possibility for application to local-regional cancer. 相似文献
9.
Y Tokura K Yamanaka H Wakita S Kurokawa D Horiguchi A Usui S Sayama M Takigawa 《Canadian Metallurgical Quarterly》1994,130(8):1036-1041
BACKGROUND: Halo congenital nevus is a condition in which halo formation is associated with congenital nevocellular nevi. Although several theories have been proposed, the immunologic mechanisms of halo formation and concomitant nevus regression still remain unclear. We presented immunologic findings in a case of halo congenital nevus with unique histologic location of inflammatory cells. OBSERVATIONS: Histologically, the present case of halo congenital nevus undergoing spontaneous regression showed a marked inflammatory infiltrate with remnants of original nevus cell nests. In the infiltrating T cells, CD8+ cells outnumbered CD4+ cells and the infiltrate of natural killer cells was not substantial. Direct and indirect immunofluorescence studies demonstrated the presence of IgM antibodies against nevus cells as well as melanoma cells and cultured melanocytes in the patient's serum. CONCLUSIONS: Our findings suggest that both T-cell-mediated immunity and IgM antibodies may be involved in the regression of halo congenital nevus. However, it is important to point out that our results may simply be epiphenomena and not directly responsible for the destruction of nevus cells. 相似文献
10.
Hirokazu Ikeda Chikara Fukunaga Yutaka Saitoh Masahiro Inoue Junko Yamanaka 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》1996,380(3):618-622
The radiation tolerance for prototype front-end chips designed for a silicon micro-strip detector was examined with a 60Co irradiation source to establish an allowable range of the radiation dose. The irradiated front-end chips were SMA2SH-64A, a 64-channel preamplifier array; SMA2SH-1, a single-channel preamplifier circuit with a comparator; and Control-C, a digital-control chip for the preamplifiers. 相似文献