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排序方式: 共有56条查询结果,搜索用时 15 毫秒
1.
In agricultural context, the principal cause of serious accidents for all-terrain vehicles(ATVs) is rollover. The most important parameters related to this risk is the ground slope. In this paper, we propose a structured observer to estimate the system states and the longitudinal tire forces using only wheel angular velocities measurement. The robust estimation is based on a second order sliding mode observer. This estimation is then used to build up a ground slope estimation. The algorithm is composed by two cascaded estimators. This structured estimation is then applied to the model of an agricultural vehicle G7(GregoireTM) integrated in the driving simulation environment SCANeRTM-Studio. 相似文献
2.
Dilmi Nacer Bacha Nacer-Eddine Younes Abderrahmane 《Powder Metallurgy and Metal Ceramics》2020,59(1-2):35-45
Powder Metallurgy and Metal Ceramics - This work aims to study the effect of mechanical milling of Fe, ZnO, and Ni elemental powders and thermal spraying processes on chemical composition,... 相似文献
3.
Rabeh Slimani Nacer Zazi Jean-Paul Chopart 《Protection of Metals and Physical Chemistry of Surfaces》2016,52(1):111-118
In this work a special regard is given to the morphology of the nickel deposited layers, onto AA1370 aluminum section and central longitudinal surfaces, with and without a weak magnetic field oriented in parallel and perpendicular to the coated surface in modified Watt bath. The obtained results show the formation of honeycomb structure nickel deposits for samples treated with weak parallel oriented field under approximately 0.3 A/cm2, and partial dendritic structure nickel deposit for samples treated with weak perpendicular oriented magnetic field, the perimeter deposits with and without magnetic field is different to the deposits in the remain surface. We attributed the defect of nickel deposits on the surfaces with and without magnetic field to the distribution of the intermetallics particles and we attributed the honeycomb structure to the escapement of hydrogen and oxygen. 相似文献
4.
Taleb Samia Dokhan Nahed Zazi Nacer Chopart Jean-Paul 《Protection of Metals and Physical Chemistry of Surfaces》2019,55(4):781-788
Protection of Metals and Physical Chemistry of Surfaces - In this work the effect of the permanent weak magnetic field on the electrodeposited ZnO nanostructured film on the ITO substrate... 相似文献
5.
Youcef Hadji Abdessabour Benamor Nabil Chiker Adel Haddad Nacer Tala-Ighil Jean-Pierre Erauw Vedi Dupont Arnaud Tricoteaux Christelle Nivot Anthony Thuault Mohamed Hadji 《International Journal of Applied Ceramic Technology》2020,17(2):695-706
In this study, wear and friction behavior of two based-composites from the Ti-Si-C system, (40 wt% TiC; 28 wt% Ti5Si3; 17 wt% Ti3SiC2) and (18 wt% TiC; 26 wt% Ti5Si3; 41 wt% Ti3SiC2) reinforced by 15 wt% of large size SiC (100-150 µm) particles were investigated. The four-phase composites exhibited approximatively the same friction coefficient (µ ~ 0.9) under high loads (10 N and 7 N). The composite with high Ti3SiC2 showed higher wear rate values by one order of magnitude. However, under 1 N, the composite with high TiC content showed a higher running-in period and a lower steady state µ value (0.37 after 1000 m sliding distance). Scanning electron microscopy, Energy Dispersive X-Ray and Raman spectroscopy analysis of the worn surfaces of the two composites revealed that oxidation was the dominant wear mechanism. The oxidation process and the removal kinetics of the oxides during sliding controlled the tribological behavior of the composites. The influence of processing variables on microstructures development and wear mechanisms of the composites is discussed. 相似文献
6.
Nacer Abouchi Romuald Gallorini 《Analog Integrated Circuits and Signal Processing》2001,27(1-2):73-83
The integration of various mathematical functions in ananalogue mode is a growing concern, e.g., for image processingapplications. Specific cells using CMOS technology which performarithmetical operations [1,2] have already been designed. This paperdescribes an extension of the previous cells performing the two mostfundamental transcendental functions: logarithm and exponential. Thedesign of this extension and technological issues are detailed in thispaper. The exponential function is based on MOS transistors operatingin the weak inversion region, in order to behave like bipolar transistors while remaining in a standard CMOS technology. 相似文献
7.
Nacer Abouchi Romuald Gallorini 《Analog Integrated Circuits and Signal Processing》2001,27(1-2):71-81
The integration of various mathematical functions in ananalogue mode is a growing concern, e.g., for image processingapplications. Specific cells using CMOS technology which performarithmetical operations [1,2] have already been designed. This paperdescribes an extension of the previous cells performing the two mostfundamental transcendental functions: logarithm and exponential. Thedesign of this extension and technological issues are detailed in thispaper. The exponential function is based on MOS transistors operatingin the weak inversion region, in order to behave like bipolar transistors while remaining in a standard CMOS technology. 相似文献
8.
Nacer Debbar 《International Journal of Numerical Modelling》2016,29(2):333-342
We present a numerical characterization of a high‐speed high‐responsivity GaAs lateral Schottky barrier photodiode (LSBPD). The LSBPD is a planar structure composed of interdigitated Schottky barrier and ohmic contacts. A metal–semiconductor–metal (MSM) structure with identical geometry is simulated for comparison. The dark characteristics are found identical for the two devices. Under illumination, the LSBPD exhibited significantly superior responsivity compared with the MSM, while maintaining comparatively similar response time and 3 dB bandwidths. The results of the study indicate conclusively that the lateral Schottky barrier photodiode can provide an excellent alternative to the standard MSM photodetectors for high‐speed optoelectronic applications. Copyright © 2015 John Wiley & Sons, Ltd. 相似文献
9.
Nacer Debbar 《International Journal of Numerical Modelling》2011,24(4):335-344
A detailed investigation of the dark electrical characteristics of the lateral metal–semiconductor–metal (MSM) structures is carried out using a two‐dimensional numerical simulation based on the drift‐diffusion model. The model includes image force barrier lowering and current‐dependent recombination velocities at the Schottky contacts. The simulation was used to examine the details of the depletion region, the electric field distributions, and the current path in the active region of the planar structure. The obtained results were shown to be very helpful to understand and to explain various behaviours seen in the characteristics of the metal–semiconductor–metal (MSM) structures. The dark I‐V characteristics of the structure were also calculated and compared with published experimental data. The results reveal the importance of the image force lowering on the characteristics and the hole injection at the forward contact beyond the flat band voltage. Copyright © 2010 John Wiley & Sons, Ltd. 相似文献
10.
Berrah Yacine Boumezbeur Abderrahmane Kherici Nacer Charef Nouar 《Bulletin of Engineering Geology and the Environment》2018,77(3):1155-1165
Bulletin of Engineering Geology and the Environment - In the Tebessa area, the nature of geological formations in the subsurface is influenced considerably the superstructures built on them by the... 相似文献