Electrowetting-Assisted Generation of Ultrastable High Charge Densities in Composite Silicon Oxide–Fluoropolymer Electret Samples for Electric Nanogenerators

Electric nanogenerators that directly convert the energy of moving drops into electrical signals require hydrophobic substrates with a high density of static electric charge that is stable in “harsh environments” created by continued exposure to potentially saline water. The recently proposed charge-trapping electric generators (CTEGs) that rely on stacked inorganic oxide–fluoropolymer (FP) composite electrets charged by homogeneous electrowetting-assisted charge injection (h-EWCI) seem to solve both problems, yet the reasons for this success have remained elusive. Here, systematic measurements at variable oxide and FP thickness, charging voltage, and charging time and thermal annealing up to 230 °C are reported, leading to a consistent model of the charging process. It is found to be controlled by an energy barrier at the water-FP interface, followed by trapping at the FP-oxide interface. Protection by the FP layer prevents charge densities up to −1.7 mC m⁻² from degrading and the dielectric strength of SiO₂ enables charge decay times up to 48 h at 230 °C, suggesting lifetimes against thermally activated discharging of thousands of years at room temperature. Combining high dielectric strength oxides and weaker FP top coatings with electrically controlled charging provides a new paradigm for developing ultrastable electrets for applications in energy harvesting and beyond.     

Effect of Boronizing on Operating Stability of Steel AISI 304L under Erosion Impact of Hard Particles

Metal Science and Heat Treatment - The effect of solid boronizing at 950°C for 2 and 4 h on the phase composition, microstructure, hardness and abrasive wear of steel AISI 304L is studied...     

On keys' meanings and modes: the impact of different key solutions on children's efficiency using a mobile phone

The present study investigates the impact of different key solutions of mobile phones on users' effectiveness and efficiency using the devices. In the first experiment, 36 children (9 - 14 years) and in the second experiment 45 young adults (19 - 33 years) completed four common phone tasks twice consecutively on three simulated phones that had identical menus, but different key solutions. An approach was undertaken to quantify the complexity of keys in three models, incorporating different factors contributing to the keys' complexity (number of key options, number of modes and number of modes with a semantically dissimilar meaning), in order to predict users' performance decrements. As a further main factor, the degree of the users' locus of control (LOC) was measured and interactions with performance outcomes were studied. As dependent measures, the number of inefficient keystrokes, the number of tasks solved and the processing time were determined. Results showed a significant effect of control key solutions on users' efficiency and effectiveness for both children and young adults. Moreover, children's LOC values significantly interacted with performance: children with low LOC values showed the lowest performance and no learnability, especially when using keys with a high complexity. From the three factors contributing to the complexity of keys, keys exerting different functions with semantically inconsistent meanings had the worst effect on performance. It is concluded that in mobile user interface design keys with semantically inconsistent meanings should be generally avoided.     

Fabrication of Schottky barrier MOSFETs using self-assembly CoSi2 nanopatterning and spacer gate technologies

A self-assembly patterning method for generation of epitaxial CoSi₂ nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n⁺-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO₂ and 300 nm Si₃N₄. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi₂ layer and a subsequent out-diffusion process to form the n⁺-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated.     

Management, Market, and Financial Factors Separating Winners and Losers in E-Business

There have been many successful e‐businesses as well as many failed e‐businesses. The methods and practices that were evident in the development of both surviving e‐businesses and failed ones have much to teach us. Why did some e‐businesses fail while others survived? At present few guidelines exist to assist e‐business owners and managers wanting to succeed in their Internet‐based ventures. This study empirically investigated factors that may lead to e‐business success or failure; these were categorized as management, market, and financial factors. The results of a survey were combined with one‐on‐one interviews of venture capitalists who funded successful and failed e‐businesses. The results indicate that certain factors deemed applicable to an e‐business may have contributed to the firm’s eventual success or failure.     

Fast and accurate 4‐node quadrilateral

An accurate and variationally consistent 4‐node quadrilateral element is introduced where high coarse mesh accuracy and low mesh distortion sensitivity are characteristic qualities, even when incompressibility is approached for plane strain. One‐point quadrature integration procedure is adopted and a new improved stabilization technique is developed. Orthogonality conditions are utilized so that the patch test is satisfied for arbitrary quadrilaterals. Several numerical examples including a convergence rate study are presented which confirm the excellent performance of this element. Copyright © 2004 John Wiley & Sons, Ltd.     

Comparison of morphologic assessment of hypertrophic cardiomyopathy by magnetic resonance versus echocardiographic imaging

To compare the value of echocardiography and magnetic resonance imaging (MRI) in the assessment of the amount and extent of hypertrophy in hypertrophic cardiomyopathy (HC) and, second, to correlate the degree of hypertrophy, as assessed by MRI, with clinical and electrocardiographic parameters, 30 consecutive patients (16 men and 14 women, aged 20 to 74 years) with HC were studied. Measurements of left ventricular wall thickness were performed at 11 predetermined segments (5 basal, 5 midventricular, and 1 apical) by 2-dimensional echocardiography and MRI. Two parameters derived from MRI studies were considered as indicators of the degree and extent of hypertrophy: (1) mean of the measured wall thickness at the 11 segments, and (2) the number of segments with thickness > 15 mm. Results showed that, from a total of 330 myocardial segments, thickness could be measured by echocardiography in 221 (67%), whereas MRI allowed measurement of 320 segments (97%). When compared with clinical and electrocardiographic data, no correlation was found regarding mean wall thickness and number of hypertrophied segments by MRI except for the presence of an abnormal electrocardiographic repolarization pattern. It is concluded that MRI allows a better assessment of the degree and extension of left ventricular hypertrophy than echocardiography in HC. Despite the precise information on hypertrophy provided by MRI, the amount and degree of hypertrophy bears no correlation with most of the clinical data in these patients.