改性生物质作为型煤黏结剂的研究

探讨了用NaOH改性生物质秸秆作为型煤黏结剂的可行性,考察了NaOH溶液浓度对生物质改性的影响以及生物质添加量、无机物(MgO和MgCl2)添加量对型煤机械强度、防水性能和着火温度的影响。研究结果表明,NaOH改性液的质量分数为1.0%~2.0%时,制得的生物质型煤有较高的机械强度;生物质添加量在2%~20%时,随生物质添加量的增加,机械强度增加,着火温度降低,但防水性较差;而在生物质型煤中加入适量无机黏结剂后,型煤有很高的浸水强度,表现出优越的防水性能。     

NUMERICAL ANALYSIS AND EXPERI- MENT OF UNSTEADY THERMAL FIELD OF ROTOR PLATE FOR EDDY CURRENT RETARDER

The physical model based on heat transfer theory and virtual boundary method for analyzing unsteady thermal field of rotor plate for eddy current retarder used in automobile is established and boundary conditions are also defined. The finite element governing equation is derived by Galerkin method. The time differential item is discrete based on Galerkin format that is stable at any condition. And a new style of varying time step method is used in iteration process. The thermal field on the rotor plate at the radial and axle directions is analyzed and varying temperature at appointed points on two side-surfaces is measured. The testing and analytical data are uniform approximately. Finite element method can be used for estimating thermal field of the rotor plate at initial design stage of eddy current retarder.     

雷达仿真系统中电磁干扰环境的仿真设计和实施

雷达仿真系统是为检测雷达设备的抗干扰能力以及在各种电磁环境下的工作性能而设计的，包括有源干扰和无源干扰的模拟仿真。本文阐述了无源干扰即杂波的散射模型和仿真过程；从同步脉冲干扰的基本原理出发，阐明在雷达工作环境仿真系统中距离拖引、速度拖引、虚假目标等同步脉冲有源干扰的设计和实施过程；并针对工作在搜索和跟踪交替模式下的相控阵雷达提出自适应综合干扰方式；最后分析并总结了系统仿真时为真实、有效地模拟电磁干扰环境应注意的关键问题。     

BYJ型防喷脱接器的设计与应用

本文介绍了BYJ型防喷脱接器的结构和工作原理。它既有抽油杆与大泵活塞脱接功能,又能实现不压井作业施工,是大型抽油泵理想的配套工具。现场应用表明,该防喷脱接器对接成功率较高,并实现了大泵井不压井施工。     

粘土作为高放废物处置回填材料的可行性研究

本文以西北粘土为对象,对其压实行为、热传导、膨胀特性,以及吸附和渗透性能进行了初步研究,借以探讨西北粘土在高放废物处置中用作回填材料的可行性。试验表明,以西北粘土为基材,经过适当的热改性和吸附改性,在初始含水量约为9%,于70MPa 下成型,用作高放废物处置中的回填材料是可行的。     

Electrical passivation in hydrogen plasma exposed GaN

Lightly p-doped (3×10¹⁷ cm^-3) GaN grown on GaAs substrates by metal organic molecular beam epitaxy (MOMBE) shows deactivation of the residual acceptors on exposure to a microwave (2.45 GHz) hydrogen plasma at 250°C. Subsequent annealing to 350°C produces further dopant passivation, while higher temperatures (450°C) restore the initial conductivity. These results suggest that hydrogen carrier gases should be avoided during vapour phase growth of III-V nitrides