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A dual-cathode arc plasma source was combined with a computer-controlled bias amplifier to synchronize substrate bias with the pulsed production of plasma. In this way, bias can be applied in a material-selective way. The principle has been applied to the synthesis of metal-doped diamondlike carbon films, where the bias was applied and adjusted when the carbon plasma was condensing and the substrate was at ground when the metal was incorporated. In doing so, excessive sputtering by energetic metal ions can be avoided while the sp(3)sp(2) ratio can be adjusted. It is shown that the resistivity of the film can be tuned by this species-selective bias; Raman spectroscopy was used to confirm expected changes of the amorphous ta-C:Mo films. The species-selective bias principle could be extended to multiple material plasma sources and complex materials.  相似文献   
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It is well known that the structure and properties of diamond-like carbon, and in particular the sp3/sp2 ratio, can be controlled by the energy of the condensing carbon ions or atoms. In many practical cases, the energy of ions arriving at the surface of the growing film is determined by the bias applied to the substrate. The bias causes a sheath to form between substrate and plasma in which the potential difference between plasma potential and surface potential drops. In this contribution, we demonstrate that the same results can be obtained with grounded substrates by shifting the plasma potential. This “plasma biasing” (as opposed to “substrate biasing”) is shown to work well with pulsed cathodic carbon arcs, resulting in tetrahedral amorphous carbon (ta-C) films that are comparable to the films obtained with the conventional substrate bias. To verify the plasma bias approach, ta-C films were deposited by both conventional and plasma bias and characterized by transmission electron microscopy (TEM) and electron energy loss spectrometry (EELS). Detailed data for comparison of these films are provided.  相似文献   
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Amorphous carbon (a-C) films were deposited on Si(1 0 0) wafers by a filtered cathodic vacuum arc (FCVA) plasma source. A negative electrical bias was applied to the silicon substrate in order to control the incident energy of carbon ions. Effects of the electrical bias on the a-C/Si interface characteristics were investigated by using standard Rutherford backscattering spectrometry (RBS) in the channeling mode with 2.1-MeV He2+ ions. The shape of the Si surface peaks of the RBS/channeling spectra reflects the degree of interface disorder due to atomic displacement from the bulk position of the Si crystal. Details of the analysis method developed are described. It was found that the width of the a-C/Si interface increases linearly with the substrate bias voltage but not the thickness of the a-C film.  相似文献   
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A novel polysaccharide membrane containing alginate in bacterial cellulose matrix was synthesized by Acetobacter xylinum under static conditions using a culture medium supplementation with sodium alginate. By increasing alginate content, the bacterial cellulose–alginate (BCA) membrane was more hydrophilic and the film structure became denser with the smaller average pore size. Scanning electron microscope images displayed the deposits of alginate gel on the surfaces of the multilayer cellulose film. The declines in the tensile strength, the Young's modulus, and the elongation at break of the BCA membrane were dependent on the degree of alginate supplement. The BCA membrane showed higher water absorption capacity. The addition of alginate slightly affected the water vapor transmission rate but remarkably decreased the oxygen transmission rate of the membrane. © 2009 Wiley Periodicals, Inc. J Appl Polym Sci, 2010  相似文献   
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