Monitoring of CdTe atomic layer epitaxy using in-situ spectroscopic ellipsometry

Atomic layer epitaxy or ALE has proven to be useful for the growth of epitaxial layers of high uniformity, good quality, and well-controlled thickness. In this study, we have carried out in-situ monitoring during the atmospheric pressure ALE of CdTe on GaAs (100) substrates using spectroscopic ellipsometry (SE). The susceptor temperature, reactant partial pressures, as well as the flow and flush duration for each precursor are crucial process variables for ALE growth. Growth was carried out for 20–25 cycles under different sets of these process conditions during the experiment and in-situ SE was used to verify the presence of layer-by-layer growth, which enabled the quick determination of the process window. We observed ALE growth of CdTe at 300°C, supporting the explanation that the growth of CdTe occurs via a surface catalyzed decomposition of the Te precursor di-isopropyltelluride (DIPTe). Investigation of ALE mode growth behavior for different susceptor temperatures and DIPTe flush times indicated that the growth was limited by competition between desorption and reaction of the adsorbed DIPTe species on the Cd terminated surface.     

Defect Characterization Using Pulsed Thermography

Infrared Thermography is one of the advanced NDE methods that is becoming attractive due to its ability to inspect non invasively large areas in short times and provide full field images in a non contact nature. While initially the method started as a qualitative technique for defect detection alone, with the advent of lock in and pulsed techniques, quantitative defect detection was made possible. While these techniques have been applied in case of ceramics and composites for defect quantification, defect sizing and quantification using these methods have not been systematically attempted in case of stainless steels. A systematic study has been undertaken to evaluate the accuracy of these empirical Pulsed Thermography (PT) techniques for defect size and depth estimation in type 316 L austenitic stainless steels. Theoretical modelling based on finite difference analysis using Thermo Calc 6L software has also been done and the results compared.     

Multiple-load series resonant inverter for induction cooking application with pulse density modulation

Multiple-load induction cooking applications are suitable used when multi-output inverters or multi-inverters are needed for multiple-load operation. Some common approaches and modifications are needed in inverter configuration for multiple-load application. This paper presents an inverter configuration with two loads by using pulse density modulation control technique. It allows the output power control of each load independently with constant switching frequency and constant duty ratio. The pulse density modulation control technique is obtained using phase on–off control between two legs of the inverter to reduce acoustic noise. The two-load three-leg inverter configuration provides reduction of the component count for extension of multiple loads. The control technique provides a wide range of output power control. In addition, it can achieve efficient and stable zero voltage switching operation in the whole load range. The proposed control scheme is simulated and experimentally verified with two-load inverter configuration.     

Microstructure of rapidly-quenched ZrO2-SiO2 glass-ceramics fabricated by container-less aerodynamic levitation technology

In this work, an aerodynamic levitation technology (ALT) was utilized to prepare ZrO₂-SiO₂ glass-ceramics with two different ZrO₂ contents, that is, 35 mol% and 50 mol%. The glass-ceramics were partially melted at ∼2000°C or fully melted at ∼3000°C by ALT, followed by rapid quenching to obtain spherical glass-ceramic beads. The phase compositions and microstructures of the glass-ceramics were characterized. Crystallization of ZrO₂ occurred during the solidification process and ZrO₂ content, processing temperature, and the addition of yttrium (3 mol%) affected the crystalline phase of ZrO₂. No ZrSiO₄ or crystalline SiO₂ were formed during the solidification process and the glass-ceramics were away from thermodynamic equilibrium due to rapid quenching. The glass-ceramics showed a microstructure of irregular-shaped ZrO₂ micro-aggregates embedded in an amorphous SiO₂ matrix, with lamellar twins and lattice defects formed within ZrO₂ crystals. For samples prepared at ∼3000°C, a liquid-liquid phase separation occurred in the melt, which eventually resulted in the formation of large and irregular-shaped ZrO₂ aggregates. In comparison, for samples prepared at ∼2000°C, pre-existed ZrO₂ crystals formed during heating acted as nucleation sites during the cooling process, followed by grain growth to form large ZrO₂ aggregates. Solidification and microstructure formation mechanisms were proposed to elucidate the solidification process during rapid cooling and the microstructure of the glass-ceramics obtained.     

Studying orientation relationships in heteroepitaxial systems

To date, the crystallography of deposits on single-crystal substrates has been studied by the use of linear transformation theories, and the results of the two-dimensional invariant line criterion are quite successful in rationalizing the epitaxial orientation of most metal/metal systems. In this article, however, we describe the use of a lattice potential-energy model (LPEM) to duplicate the results of the invariant line criterion by examining the case of silicides on (001) Si. Unlike geometric models that ignore the chemical nature of atoms and look only for strain energy, the LPEM has the potential of simulating real chemical bonding by altering the nature of the Fourier series used to generate the potential surface.     

Elemental Analogues of Graphene: Silicene,Germanene, Stanene,and Phosphorene

The fascinating electronic and optoelectronic properties of free‐standing graphene has led to the exploration of alternative two‐dimensional materials that can be easily integrated with current generation of electronic technologies. In contrast to 2D oxide and dichalcogenides, elemental 2D analogues of graphene, which include monolayer silicon (silicene), are fast emerging as promising alternatives, with predictions of high degree of integration with existing technologies. This article reviews this emerging class of 2D elemental materials – silicene, germanene, stanene, and phosphorene – with emphasis on fundamental properties and synthesis techniques. The need for further investigations to establish controlled synthesis techniques and the viability of such elemental 2D materials is highlighted. Future prospects harnessing the ability to manipulate the electronic structure of these materials for nano‐ and opto‐electronic applications are identified.     

Stretchable and Tunable Microtectonic ZnO‐Based Sensors and Photonics

The concept of realizing electronic applications on elastically stretchable “skins” that conform to irregularly shaped surfaces is revolutionizing fundamental research into mechanics and materials that can enable high performance stretchable devices. The ability to operate electronic devices under various mechanically stressed states can provide a set of unique functionalities that are beyond the capabilities of conventional rigid electronics. Here, a distinctive microtectonic effect enabled oxygen‐deficient, nanopatterned zinc oxide (ZnO) thin films on an elastomeric substrate are introduced to realize large area, stretchable, transparent, and ultraportable sensors. The unique surface structures are exploited to create stretchable gas and ultraviolet light sensors, where the functional oxide itself is stretchable, both of which outperform their rigid counterparts under room temperature conditions. Nanoscale ZnO features are embedded in an elastomeric matrix function as tunable diffraction gratings, capable of sensing displacements with nanometre accuracy. These devices and the microtectonic oxide thin film approach show promise in enabling functional, transparent, and wearable electronics.     

Nanoscale Characterization of Energy Generation from Piezoelectric Thin Films

We report on the use of nanoindentation to characterize in situ the voltage and current generation of piezoelectric thin films. This work presents the controlled observation of nanoscale piezoelectric voltage and current generation, allowing accurate quantification and mapping of force function variations. We characterize both continuous thin films and lithographically patterned nano­islands with constrained interaction area. The influence of size on energy generation parameters is reported, demonstrating that nanoislands can exhibit more effective current generation than continuous films. This quantitative finding suggests that further research into the impact of nanoscale patterning of piezoelectric thin films may yield an improved materials platform for integrated microscale energy scavenging systems.