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排序方式: 共有3566条查询结果,搜索用时 15 毫秒
1.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
2.
J.A. Bakken L. Barone D. Braun M. Caillat C. Dionisi C. Dor H. Elmamouni F. Ferroni G.L. Grazer J.T. He R. Herbiet B. Ille P. Lecomte E. Longo P.F. Loverre Y.S. Lu J.P. Martin U. Micke R.P. Mount P.A. Pirou H.-G. Sander D. Schmitz M. Schneegans D.P. Stickland R.L. Sumner K.L. Tung E. Valente M. Vivargent 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》1985,228(2-3):294-302
A calorimeter of 25 bismuth germanate (BGO) crystals equipped with silicon photodiode readout has been tested at the CERN SPS in the energy range 1–50 GeV. The response for electrons has been shown to be linear in this energy range and the rms resolution obtained (
) is approximately 1%, for E > 4 GeV. The electron/pion separation was found to be better than 1:500 in the energy range 1–20 GeV. Data on lateral and longitudinal shower development were compared with the results of a Monte Carlo simulation using the SLAC-EGS program and found to be in good agreement. 相似文献
3.
SM Kornblau E Estey T Madden HT Tran S Zhao U Consoli V Snell G Sanchez-Williams H Kantarjian M Keating RA Newman M Andreeff 《Canadian Metallurgical Quarterly》1997,15(5):1796-1802
PURPOSE: Expression of the multidrug resistance gene (MDR1) p170 protein is frequent in leukemic blasts from patients with relapsed acute myelogenous leukemia (AML). A phase I study using the nonimmunosuppressive MDR1 blocker SDZ PSC-833 (PSC) in combination with mitoxantrone (MITO) and etoposide (VP) was performed. PATIENTS AND METHODS: Starting doses (LVL0) of MITO (3.25 mg/m2/d on days 1 and 3 to 6) and VP (210 mg/m2/d on days 1 and 3 to 5) were 40% of the maximal-tolerated dose (MTD) from a prior study. A 1.5-mg/kg loading dose of PSC was followed by a 120-hour continuous infusion of 10 mg/kg/d on days 2 to 6. Blood samples for PSC, MITO, and VP pharmacokinetics (PK) were taken on days 1 and 3, and samples for MDR1 expression were taken on day 0. RESULTS: Severe mucositis developed in all patients at LVL0; therefore, MITO and VP doses were reduced to 2.5 and 170 mg/m2 (LVL-1) for the next seven patients, and this dose proved to be MTD. All LVL0 and three LVL-1 patients had transient elevations in the serum bilirubin level to > or = 4 mg/dL. Serum creatinine level increased to greater than 2 mg/dL in one case. There were no other grade 3 or 4 nonhematologic toxicities observed. The peripheral blood was cleared of leukemia in three LVL0 and four LVL-1 patients. The marrow was cleared of leukemic cells in one LVL0 and five LVL-1 patients, and a significant reduction in marrow leukemic infiltrate was observed in eight of 10. No patient achieved complete remission (CR), and all died of progressive disease (n = 8) or infection (n = 2). MDR1 expression was detected by fluorescent-activated cell sorter (FACS) analysis in five of seven cases. An elevated MDR1 mRNA level was detected by quantitative polymerase chain reaction (Q-PCR) in six of eight cases studied. Clearing of leukemia cells from the marrow occurred in four of six MDR1-positive and one of three MDR1-negative patients. Despite the fact that LVL0 doses had to be reduced due to toxicity, coadministration of PSC did not produce a consistent effect on MITO PK; however, it did repeatedly lead to increased levels of VP in the serum. CONCLUSION: We conclude that PSC-MITO-VP is a tolerable regimen with antileukemic activity. Addition of PSC necessitated a 66% reduction in MITO and VP doses from a prior study without PSC. 相似文献
4.
5.
The AlCoCrCuFeNi high-entropy alloy system was synthesized using a well-developed arc melting and casting method. Their elemental effect on microstructures and hardness was investigated with X-ray diffraction, scanning electron microscopy and Vickers hardness testing. The alloys exhibit quite simple FCC and BCC solid solution phases. Co, Cu and Ni elements enhance the formation of the FCC phase while Al and Cr enhance that of the BCC phase in the alloy system. BCC phases form a spinodal structure during cooling. Copper tends to segregate at the interdendrite region and forms a Cu-rich FCC phase. Low copper content renders the interdendrite as a thin film and the as-cast structure like recrystallized grain structure. The formation of BCC phases significantly increases the hardness level of the alloy system. The strengthening mechanism is discussed. 相似文献
6.
Streit D.C. Hafizi M.E. Umemoto D.K. Velebir J.R. Tran L.T. Oki A.K. Kim M.E. Wang S.K. Kim C.W. Sadwick L.P. Hwu R.J. 《Electron Device Letters, IEEE》1991,12(5):194-196
The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×1019 cm-3 at the emitter edge to 5×1018 cm-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×1019 cm-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40% 相似文献
7.
Recent advances in the pharmacology of sedative drugs have expanded their use in the intensive care unit. Indications and endpoints for sedation, however, often are defined poorly and are difficult to assess. Nevertheless, the complications of sedative drug administration are real. New indications for sedation have been proposed in recent years, including enforcing sleep/wake cycles, manipulating cellular metabolism, and preventing myocardial ischemia. The evidence supporting the efficacy of these new indications is not yet complete. 相似文献
8.
Dielectric properties and conduction of the epoxy and its composites were measured over the temperature range — 20 to 70°C and the frequency range 10–4-10–1 Hz. Dielectric properties were obtained by performing Fouriertransforms on the charging and discharging curves. The resulting isothermal frequency spectra of dielectric constants and dielectric loss factors were analysed using the Cole-Cole law to obtain the activation energy for each material. The activation energies were also obtained for isothermal d.c. current. Current density-electric field-temperature characteristics are obtained for field levels up to 60 kV cm–1, with step excitation of the applied field and currents recorded after a delay time of 10 min. Current density and electric field were computed and plotted for constant temperature. The linear (ohmic) curves were obtained for fields up to about 60 kV cm–1 for temperatures up to about 20 °C. The non-linearity at the higher fields and temperatures did not imply the occurrence of non-ionic conduction. It has been demonstrated that both electric conduction and relaxation behaviour were ionic and could be fit by the Nakajima model for the unfilled epoxy and the Taylor model for the composites. 相似文献
9.
MODELING LIQUID MASS TRANSFER IN HIGEE SEPARATION PROCESS 总被引:1,自引:0,他引:1
Correspondence concerning this paper should be addressed to Professor Richard S.H. Mah. Hsien-Hsin Tung is now affiliated with Department of Chemical Engineering, California Institute of Technology
Penetration theory is used to describe the liquid mass transfer in Higee separation process. Within a possible range of effective areas, it is shown that the predicted mass transfer coefficients are in reasonable agreement with the estimated mass transfer coefficients. The estimated coefficients were calculated from the experimental data and the possible effective areas. Hence it is concluded the penetration theory is generally applicable to describe liquid mass transfer in Higee separation process. The comparison also suggests that liquid mixing at the junctions of packing materials may be more complete in Higee process than in traditional process. 相似文献
Penetration theory is used to describe the liquid mass transfer in Higee separation process. Within a possible range of effective areas, it is shown that the predicted mass transfer coefficients are in reasonable agreement with the estimated mass transfer coefficients. The estimated coefficients were calculated from the experimental data and the possible effective areas. Hence it is concluded the penetration theory is generally applicable to describe liquid mass transfer in Higee separation process. The comparison also suggests that liquid mixing at the junctions of packing materials may be more complete in Higee process than in traditional process. 相似文献
10.
Streit D.C. Oki A.K. Umemoto D.K. Velebir J.R. Stolt K.S. Yamada F.M. Saito Y. Hafizi M.E. Bui S. Tran L.T. 《Electron Device Letters, IEEE》1991,12(9):471-473
The authors have developed a modified MBE growth process to produce high-gain n-p-n GaAs-AlGaAs heterojunction bipolar transistors (HBTs) with a mean time to failure (MTTF) of 1.5×108 h at 125°C. Beryllium incorporation and diffusion are controlled through a combination of reduced substrate temperature and increased As/Ga flux ratio during MBE growth, resulting in extremely stable HBT profiles. The authors also demonstrate graded InGaAs surface layers with nonalloyed refractory metal contacts that significantly improve ohmic reliability compared to alloyed AuGe contacts. The ability to produce robust HBTs by MBE is critically important to this technology 相似文献