Design and evaluation of a mobile smart home interactive system with elderly users in Brazil

Personal and Ubiquitous Computing - This article presents a study concerning the evaluation of a smart home control system for elderly people with a sample of 10 users in a city in the interior of...     

Mutational analysis of amiloride sensitivity of the NhaA Na+/H+ antiporter from Vibrio parahaemolyticus

The activity of the NhaA Na+/H+ antiporter of Vibrio parahaemolyticus is inhibited by amiloride. We found an amino acid sequence in the NhaA that was identical to a putative amiloride binding domain of the Na+/H+ exchanger in mammalian cells. We constructed mutant NhaAs that had amino acid substitutions in the putative amiloride binding domain by site-directed mutagenesis. These include V62L (Val62 replaced by Leu), F63Y, F64Y, and L65F. Most mutant NhaAs showed decreased sensitivity for amiloride. Among these, the F64Y mutant NhaA showed the least amiloride sensitivity, with a Ki value 7 to 10 times greater than that in the wild type. Thus, the sequence between residues V62 and L65 in NhaA, especially F64, is very important for the inhibitory effect of amiloride on the antiporter.     

Enhanced hot-carrier-degradation in LDD MOSFET's under pulsedstress

Hot-carrier degradation of lightly doped drain (LDD) MOSFET's under ac stress is investigated. Enhanced ac degradation occurs in LDD MOSFET's as well as in single-drain MOSFET's. However, there is a peculiar degradation mechanism in LDD MOSFET's. For single-drain MOSFET's, enhanced ac degradation appears in both threshold voltage and transconductance at stress drain voltages larger than a critical value. On the other hand, for LDD MOSFET's, although the enhanced degradation in threshold voltage and transconductance appears at stress drain voltages larger than a critical value, the enhanced degradation in transconductance appears even under stress drain voltages lower than the critical value. The difference in the ac-enhanced degradation between LDD and single-drain structures can be explained by a hot hole generated neutral-electron-trap model and the change in hot-hole-injected oxide region according to stress bias conditions     

High ratios of free to total insulin-like growth factor-I in early infancy

A case of huge desmoid tumor successfully treated by hyperthermoradiotherapy is described. A 23-year-old man with familial adenomatous polyposis was operated upon for a desmoid tumor in the mesenterium involving the right kidney and small intestine in 1988. In 1990, the tumor recurred and could not be resected because of the involvement of the vena cava. The tumor grew larger and larger, and occupied two-thirds of the right lower quadrant. Several therapies using sulindac, tamoxifen, prednisolone, indomethacin, luteinizing hormone-releasing hormone analogue, and ascorbate were all ineffective. Finally, the combination of radiation and hyperthermia was used over a 6-month period. At the end of the hyperthermoradiotherapy, the tumor in the abdominal wall was markedly reduced in size, and the protruded abdominal wall became flat. To our best knowledge, this is the first report of the successful treatment of a huge desmoid tumor by hyperthermoradiotherapy.     

Hot-carrier-injected oxide region in front and back interfaces inultra-thin (50 nm), fully depleted, deep-submicron NMOS andPMOSFET's/SIMOX and their hot-carrier immunity

The hot-carrier-injected oxide region in the front and back interfaces is systematically clarified for fully depleted surface-channel nMOSFET's and surface-channel and buried-channel pMOSFET's fabricated on an ultra-thin (50 nm)-film SIMOX wafer. Based on these results, the influence of these injected carriers on front-channel properties is investigated. NMOSFET degradation is shown to be caused by hot-carriers injected into the drain side of the front oxide and pMOSFET degradation by hot-electrons injected into the drain side of both the front oxide and the back oxide. Additionally, it is shown experimentally that these fully depleted devices with effective channel lengths between 0.1-0.2 μm have fairly high hot-carrier immunity, even for single-drain structures     

Blue electroluminescent devices withSrGa2S4:Ce for full-color display

In order to realize full-color electroluminescent (EL) displays, which are expected as a dominant candidate for the future multimedia flat panel display, blue EL devices with SrGa₂S₄:Ce have been prepared by molecular beam epitaxy (MBE). This paper proposes a novel deposition method employing Sr metal and Ga₂S₄ compound as the source materials. A single-phase SrGa₂S₄ layer is obtained in a Ga₂S₃/Sr flux ratio of 60 and at the growth temperature of 560°C. We have obtained the well-saturated blue with CIE color coordinates of x=0.14, y=0.14 and brighter blue EL devices made by optimizing the growth conditions in MBE. The maximum luminance of 70 cd/m² in comparison with the 3 cd/m₂ of our previous EL devices, is achieved at a driving frequency of 1 kHz     

Correlation of electrical properties and internal friction in mixed conduction glasses containing ionic and electronic conduction (1) Fe2O3-Na2O-P2O5 glasses

The electrical properties and internal friction in (40–x)Fe₂O₃·xNa₂0.60P₂O₅ glasses were measured. Two or three peak on internal friction were observed in the temperature range of –100 to 300° C at a frequency of about 1 Hz. The peak area of internal friction could be explained quantitatively by the additivity law of diffusion of Na⁺ ion and hopping of electrons which are carriers similar to those of dielectric loss. Activation energy, peak temperature of dielectric loss and internal friction showed almost the same value. Both relaxation phenomena have the same mechanism which is due to the diffusion of Na⁺ion and the hopping of electrons between Fe²⁺ Fe³⁺. The high-temperature peak is assumed to result from the interaction between protons or alkali ions and non-bridging oxygen.     

Preparation of spinel-type ferrite thin films by the dip-coating process and their magnetic properties

Films of spinel-type ferrite, MFe₂O₄ (M=Ni, Co, Mg, Li_0.5Fe_0.5) have been prepared by a dip-coating method from the sol-gel process. Ferric nitrate, nickel nitrate, cobalt nitrate and lithium nitrate were used as raw materials, and glycerol and formamide were used as solvents. A film was prepared by dipping a silica glass plate. The spinel-type ferrite was obtained by heat-treatment at 700–900°C for 2 h in air. The film thickness was about 0.8 m. The saturation magnetization, _r, of the film and powder with composition 50NiO·50Fe₂O₃ was 196 emu cm^–3 and 29.1 emu g^–1, respectively, and the coercive force,H _c, was 140 and 95 Oe, respectively, after heat-treatment at 800°C for 2 h. In particular, the films were shown to have a much largerH _c than the powder. The grain growth of spinel ferrite may be subject to restriction because it is in progress above an amorphous base-plate. The crystals are therefore aligned with the base-plate and have uniaxial anisotropy.     

Synthesis of Sn-Incorporated Folded Sheets Mesoporous Materials (Sn-FSM-16)

Sn-incorporated folded sheets mesoporous materials (Sn-FSM-16) with various contents of Sn were synthesized by using a mixture of water glass, SnCl₄ and NaOH as starting materials. Hexadecyltrimethyl-ammonium chloride (surfactant) was used to intercalate into the layered silicate. The reaction process was followed by measurements of XRD patterns of intermediates. The Sn-FSM-16 was formed via the following mechanism: (1) layered silicates such as - - and -Na₂Si₂O₅ were formed as intermediates by the calcination of the mixture of the starting materials; (2) the surfactant was intercalated into the layered silicates; (3) the surfactant-silicate complex with hexagonal structure was obtained as a precursor of Sn-FSM-16; (4) the precursor was calcined to decompose the surfactant in the interlayer and was changed to Sn-FSM-16. The structural aspect of Sn in Sn-FSM-16 was studied by XPS profiles of Sn 3d _5/2 and Si_2p, ²⁹ Si MAS NMR and FTIR. The content of Sn in Sn-FSM increased with increasing concentrations of both Sn and NaOH in the starting materials. The surface area of Sn-FSM-16 decreased with an increase of Sn content in Sn-FSM (1160–620 m²/g).     

Self-organized porous TiO2 and ZrO2 produced by anodization

The present work investigates the electrochemical formation of self-organized high aspect ratio TiO₂ and ZrO₂ nanotube layers. The formation and growth of a self-organized porous layer can be achieved directly by anodization without any templates in fluoride containing electrolytes. The morphology of the porous layers is affected by the electrochemical conditions such as the electrolyte composition, the pH and the exact polarization treatment (such as the potential sweep rate from the open-circuit potential to the anodizing potential). For Ti, nanotube layers are formed with diameters varying from approx. 20 nm to 100 nm and lengths from approx. 0.25 μm to 2.5 μm depending on the electrolytes and pH. On the other hand, for Zr, tubes of 50 nm in diameter and up to approx. 17 μm in length can be grown—a key parameter in this case is the potential sweep rate. The large difference between Ti and Zr in the achievable thickness of nanotube layers indicates a difference in the growth mechanism which may be based on the different chemical dissolution rates of electrochemically formed oxides.