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由于光纤通信的迅猛发展,在七十年代出现了许多不同结构形式的发光二极管,以实现各类传输系统对光源的高效率、长寿命与好的频响特性的要求.1975年由RCA实验室研制成功的"限束"边发光二极管就是其中之一.这种结构把发光区集中在边部,克服了有源区严重的自吸收,提高了功率效率.因为工作区的三面与半导体材料相毗连,散热较好,所以LED的光输出对温度相当不敏感.同时这种结构制造简单,特别是与需在N面腐蚀出光孔的面发光二极管相比尤为简单.我们研究了这种"限束"结构的发光器件并且作了适当的改进.首先把电极条宽的尺寸从100微米缩小为50微米,以求与芯径为50微米和数值孔径为0.2 相似文献
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本文介绍了红外变象技术在光通信器件研究中的地位、实验装置、实验方法、应用情况;指出红外摄象管是红外变象技术中一个重要的测量器件,开发红外摄象管的研制和应用是十分重要的。 相似文献
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本文介绍了测量高速发光管的近场光强分布、发光区发光宽度和发光面积的方法;分析了电极条宽度不同时器件的发光宽度、发光面积和发散角随注入电流的变化特性;简述了器件的响应速度与电极条宽度的关系。 相似文献
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Possible structures and properties of some excited states of ∧^+c dynamically generated in the coupled-channel P-wave meson-baryon scattering are studied by solving the Bethe-Salpeter(BS) equation in the framework of the Chiral Unitary Approach. It is sho 相似文献
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用红外电视选行扫描仪观察由不同P型掺杂剂的外延片制成的InGaAsP/InP双异质结发光管的暗缺陷,并研究了它的来源。比较了P型掺杂剂的种类和掺杂浓度对暗结构的影响。结果表明,掺Mg和掺In-Zn合金与重掺Zn器件相比,暗结构比例明显降低。Zn可能是暗缺陷的重要来源之一。器件在70℃,85℃条件下老化2000小时后,老化前无暗缺陷的某些器件亦有暗结构产生,但其生长率很慢。 相似文献
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The defects in lnGaAsP/InP DH LEDs are observed with an infrared line scanner.The darkstructure appears before aging and it exists mainly in the form of dark spot defect.The effect of the variety andconcentration of the doping for p-InP confining layers on the dark defects is studied.The results show that thepercentage of devices with dark defects is much lower for Mg or In-Zn doped devices than for Zn dopeddevices.It is believed that Zn is one of the important origin for the formation of dark defects.The growth rateof dark defects is studied both at room temperature and at 70—85℃.The results show that after agin for15000 h at room temperature there are no dark defects newly appeared.But after aging for 2000 h at 70—85℃some devices show newly formed dark structure with very slow growth rate. 相似文献
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The method used for measuring the near-field intensity profiles,radiative intensity linewidth and equi-amplitude contour areas in the radiative region is introduced.For devices with different stripegeometries,the change of intensity width and area,near-field intensity patterns and light intensity topograph,as a function of inject current is analysed. 相似文献
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