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1.
A study of arsenic ion-implanted polycrystalline silicon films before and after annealing at various temperatures has been performed using spectroscopic ellipsometry in the ultraviolet to the visible spectral region. Using the Bruggeman effective medium approximation, an optical/structural model is presented for all the annealed samples explaining the measurements. Ellipsometric measurements reveal important structural changes as a function of annealing temperature which provide an interesting inside into the annealing kinetics of ion-implanted polycrystalline silicon films. This work also demonstrates the importance of spectroscopic ellipsometry in determining non-destructively the dielectric functions in materials that have undergone complex processing. 相似文献
2.
Androula Galiouna Nassiopoulou Violetta Gianneta Charalambos Katsogridakis 《Nanoscale research letters》2011,6(1):597
In this paper, we investigate the formation kinetics of Si nanowires [SiNWs] on lithographically defined areas using a single-step metal-assisted chemical etching process in an aqueous HF/AgNO3 solution. We show that the etch rate of Si, and consequently, the SiNW length, is much higher on the lithographically defined areas compared with that on the non-patterned areas. A comparative study of the etch rate in the two cases under the same experimental conditions showed that this effect is much more pronounced at the beginning of the etching process. Moreover, it was found that in both cases, the nanowire formation rate is linear with temperature in the range from 20°C to 50°C, with almost the same activation energy, as obtained from an Arrhenius plot (0.37 eV in the case of non-patterned areas, while 0.38 eV in the case of lithographically patterned areas). The higher etch rate on lithographically defined areas is mainly attributed to Si surface modification during the photolithographic process.PACS: 68; 68.65-k. 相似文献
3.
The structure and light-emitting properties of Si nanowires (SiNWs) fabricated by a single-step metal-assisted chemical etching (MACE) process on highly boron-doped Si were investigated after different chemical treatments. The Si nanowires that result from the etching of a highly doped p-type Si wafer by MACE are fully porous, and as a result, they show intense photoluminescence (PL) at room temperature, the characteristics of which depend on the surface passivation of the Si nanocrystals composing the nanowires. SiNWs with a hydrogen-terminated nanostructured surface resulting from a chemical treatment with a hydrofluoric acid (HF) solution show red PL, the maximum of which is blueshifted when the samples are further chemically oxidized in a piranha solution. This blueshift of PL is attributed to localized states at the Si/SiO2 interface at the shell of Si nanocrystals composing the porous SiNWs, which induce an important pinning of the electronic bandgap of the Si material and are involved in the recombination mechanism. After a sequence of HF/piranha/HF treatment, the SiNWs are almost fully dissolved in the chemical solution, which is indicative of their fully porous structure, verified also by transmission electron microscopy investigations. It was also found that a continuous porous Si layer is formed underneath the SiNWs during the MACE process, the thickness of which increases with the increase of etching time. This supports the idea that porous Si formation precedes nanowire formation. The origin of this effect is the increased etching rate at sites with high dopant concentration in the highly doped Si material. 相似文献
4.
Alexandre Nassiopoulos Frédéric Bourquin 《Computer Methods in Applied Mechanics and Engineering》2010,199(49-52):3169-3178
The work presented here deals with the reconstruction of the thermal field inside a three-dimensional structure when only some pointwise temperature measurements along a time interval [0, T] are available. The model-based reconstruction procedure builds upon optimal control theory applied to the determination of the unknown boundary conditions. The proposed dual approach enables one to reduce the on-line computational cost so that the resulting algorithm can be part of a real-time process. The complexity of the resulting algorithm does not depend on geometry. The paper details a novel methodology that enables to implement the reconstruction procedure using standard finite element tools, despite the difficulty to define the pointwise values of a three-dimensional field in the usual functional spaces where finite element methods converge. 相似文献
5.
In this work, the dielectric properties of porous Si for its use as a local substrate material for the integration on the Si wafer of millimeter-wave devices were investigated in the frequency range 140 to 210 GHz. Broadband electrical characterization of coplanar waveguide transmission lines (CPW TLines), formed on the porous Si layer, was used in this respect. It was shown that the dielectric parameters of porous Si (dielectric permittivity and loss tangent) in the above frequency range have values similar to those obtained at lower frequencies (1 to 40 GHz). More specifically, for the samples used, the obtained values were approximately 3.12 ± 0.05 and 0.023 ± 0.005, respectively. Finally, a comparison was made between the performance of the CPW TLines on a 150-μm-thick porous Si layer and on three other radiofrequency (RF) substrates, namely, on trap-rich high-resistivity Si (trap-rich HR Si), on a standard complementary metal-oxide-semiconductor (CMOS) Si wafer (p-type, resistivity 1 to 10 Ω.cm) and on quartz.
PACS
84.40.-x; 77.22.Ch; 81.05.Rm 相似文献6.
We report on experimental results of the thermal conductivity k of
highly porous Si in the temperature range 4.2 to 20 K, obtained using the
direct current (dc) method combined with thermal finite element simulations. The
reported results are the first in the literature for this temperature range. It
was found that porous Si thermal conductivity at these temperatures shows a
plateau-like temperature dependence similar to that obtained in glasses, with a
constant k value as low as 0.04 W/m.K. This behavior is attributed
to the presence of a majority of non-propagating vibrational modes, resulting
from the nanoscale fractal structure of the material. By examining the fractal
geometry of porous Si and its fractal dimensionality, which was smaller than two
for the specific porous Si material used, we propose that a band of fractons
(the localized vibrational excitations of a fractal lattice) is responsible for
the observed plateau. The above results complement previous results by the
authors in the temperature range 20 to 350 K. In this temperature range, a
monotonic increase of k with temperature is observed, fitted with
simplified classical models. The extremely low thermal conductivity of porous
Si, especially at cryogenic temperatures, makes this material an excellent
substrate for Si-integrated microcooling devices (micro-coldplate).
PACS
61.43.-j; 63.22.-m; 65.8.-g 相似文献7.
A combined process of electrochemical formation of self-assembled porous anodic alumina thin films on a Si substrate and Si etching through the pores was used to fabricate ideally ordered nanostructures on the silicon surface with a long-range, two-dimensional arrangement in a hexagonal close-packed lattice. Pore arrangement in the alumina film was achieved without any pre-patterning of the film surface before anodization. Perfect pattern transfer was achieved by an initial dry etching step, followed by wet or electrochemical etching of Si at the pore bottoms. Anisotropic wet etching using tetramethyl ammonium hydroxide (TMAH) solution resulted in pits in the form of inverted pyramids, while electrochemical etching using a hydrofluoric acid (HF) solution resulted in concave nanopits in the form of semi-spheres. Nanopatterns with lateral size in the range 12-200?nm, depth in the range 50-300?nm and periodicity in the range 30-200?nm were achieved either on large Si areas or on pre-selected confined areas on the Si substrate. The pore size and periodicity were tuned by changing the electrolyte for porous anodic alumina formation and the alumina pore widening time. This parallel large-area nanopatterning technique shows significant potential for use in Si technology and devices. 相似文献
8.
Xanthippi Zianni Androula G. Nassiopoulou 《Journal of Materials Science: Materials in Electronics》2009,20(1):68-70
The photoluminescence lifetimes of Si quantum wires and dots have been previously calculated within a continuum model that takes into account the anisotropy of silicon band structure. Here, we present our calculations on the optical transitions in Si quantum wires modulated by a quantum dot. The geometrical parameters of the buldged wire are appropriate for porous Si and the ground state is localized. The photoluminescence lifetimes are calculated and compared with those of straight wires and dots. The magnitude of the lifetime is sensitive to the structural parameters of the nanostructures. Lifetimes varying from nanoseconds to milliseconds have been obtained. The results of the calculations provide insight to the optical properties of Si nanostructures. 相似文献
9.
10.
Violetta Gianneta Antonis Olziersky Androula G Nassiopoulou 《Nanoscale research letters》2013,8(1):71