TUD-DNS3脱硝助剂在催化裂化装置的工业应用

TUD-DNS3脱硝助剂在中韩（武汉）石油化工有限公司1号催化裂化装置上进行了工业应用。结果表明：针对两段再生工艺，当系统中助剂占总催化剂藏量的质量分数为2.6%时，烟气脱硫装置外排污水中的氨氮质量浓度由加剂前的100 mg/L下降至40 mg/L以内；助剂的加入降低了CO焚烧炉的炉膛温度，有利于烟气的合格排放，并对装置操作、产品分布及汽油、柴油产品质量无不良影响。     

Comparison of total and faecal coliforms as faecal indicator in eutrophicated surface water.

The aim of this study was to evaluate the use of total coliforms (TC) and faecal coliforms (FC) using a membrane filtration method for precise monitoring of faecal pollution in Korean surface water. The samples were collected in Korea from both main rivers and their tributaries. Presumptive TC * FC were enumerated. The ratios of presumptive FC to TC were not constant, but varied widely, and TC were difficult to enumerate because of overgrowth by background colonies. For FC this was not the case. Seven hundred and three purified strains of presumptive TC * FC and their background colonies were biotyped using API 20E. Among 272 presumptive TC, non-faecal related species, Aeromonas hydrophila dominated (34.6%) and E. coli accounted for only 5.1%. In contrast, E. coli made up 89% of the 209 presumptive FC. Furthermore, of 164 background colonies on Endo Agar LES, 54.9% was A. hydrophila, while background colonies on m-FC Agar were few (58 strains), and despite their atypical colony appearance, most of them were biotyped as enteric bacteria. These results reveal that the detection of FC rather than TC using m-FC Agar is more appropriate for faecal pollution monitoring in eutrophicated surface water located in a temperate region.     

An Analysis of Citation Counts of ETRI‐Invented US Patents

From its foundation until 2004, ETRI has registered over 1,000 US patents. This letter analyzes the characteristics of these patents and addresses the explanatory factors affecting their citation counts. For explanatory variables, research team related variables, invention specific variables, and geographical domain related variables are suggested. Zero‐altered count data models are used to test the impact of independent variables. A key finding is that technological cumulativeness, the scale of invention, outputs in the electronic field, and the degree of dependence on the US technology domain positively affect the citation counts of ETRI‐invented US patents. The magnitude of international presence appears to negatively affect the citation counts of ETRI‐invented US patents.     

连续波雷达测距中的解模糊技术

研究连续波雷达测距中的距离模糊问题，分析几种常用解模糊方法的性能，并讨论参差比的选取对测距范围的影响。     

关于我国钢铁工业发展战略的思考

21世纪初是世界经济发展的重大战略机遇期,如何抓住机遇加快发展,是中国钢铁行业应认真思考的问题。十一五我国钢铁工业的发展,靠什么来拉动,还能靠大规模的投资吗?目前我们还不能生产的双高产品怎么办,靠花钱能买来技术吗?靠市场能换来核心产品吗?值得深思。当今,我们思考的不仅应考虑个别企业的生存问题,而更应考虑的是钢铁行业整体的长远发展问题,即     

了解您的管理跨度--科研项目管理方法探索

概要介绍了科学的管理技术——项目管理方法，讨论了管理跨度在项目管理中的重要性，并推荐了如何了解管理跨度的方法。     

Solid phase crystallization of amorphous silicon on glass by thin film heater for thin film transistor (TFT) application

A new process for solid phase crystallization (SPC) of amorphous silicon (a-Si) using thin film heater is reported. With this localized Ti silicide thin film heater, we successfully crystallized 500 Å-thick a-Si in a few minutes without any thermal deformation of glass substrate. The size of crystallized silicon grain was abnormally big (30-40 μm). Polycrystalline thin film transistors (TFT) fabricated using this unique thin film heater showed better mobility than those of conventional ones by furnace annealing.     

Inhibition effect of carbon dioxide on the oxidation of hydrogen over a platinum foil catalyst

This paper investigates the catalytic ignition of the H₂/O₂/CO₂ mixture on platinum in a stagnation flow at atmospheric pressure experimentally and numerically. We measure the ignition temperatures of the gas mixtures flowing towards resistively heated platinum with various composition ratios and various diluent gases of N₂, Ar and CO₂. Compared with N₂ or Ar, the CO₂ dilution shows higher ignition temperature by about 50 K, even at the same composition ratio. The ignition temperature increase is proportional to the dilution ratio. Through the numerical simulation, it is illustrated that higher ignition temperature is caused by the adsorption of CO₂ and following dissociation on platinum surface, which was to date considered negligible in catalytic combustion.     

Abnormal junction profile of silicided p+/n shallowjunctions: a leakage mechanism

The leakage mechanism in p⁺/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions     

C-t analysis of MOS capacitors under constant current stress

The effect of high oxide field stress is studied using capacitance-time (C-t) measurements of MOS capacitors. The stress results in parallel shifts of the C-t curve along the time axis. The flatband voltage shift ΔV_FB obtained from the initial deep depletion capacitance C(t=0⁺) follows the same trend as that from the high-frequency C-V characteristics. However, the discrepancy between the two flatband voltages becomes larger as the stress increases due to the effect of interface charges on C-t characteristics. The flatband voltage difference is converted to interface trap density, showing a steady increase of interface trap density with stress, similar to that from low-frequency C-V measurements