A Setup for Measuring the Spectral Dispersion of External Quantum Efficiency

Instruments and Experimental Techniques - A setup for measuring the spectral dispersion of the external quantum efficiency in a wide temperature range is described. The setup is capable of...     

Study of Current Flow Mechanisms in a CdS/<Emphasis Type="Italic">por</Emphasis>-Si/<Emphasis Type="Italic">p</Emphasis>-Si Heterostructure

The temperature dependence of the forward and reverse portions of the current–voltage characteristic and the photovoltage spectrum of a CdS/por-Si/p-Si semiconductor heterostructure are studied. It is found that the current-flow mechanisms are controlled by generation–recombination processes in the spacecharge region of the por-Si/p-Si heterojunction, carrier tunneling in the por-Si film, and the model of space-charge-limited currents. A simplified version of the energy-band diagram of the heterostructure under study is proposed.     

Study of Deep Levels in a HIT Solar Cell

The results of studying a HIT (heterojunction with an intrinsic thin layer) Ag/ITO/a-Si:H(p)/a-Si:H(i)/c-Si(n)/a-Si:H(i)/a-Si:H(n⁺)/ITO/Ag solar cell by the capacitance–voltage characteristic and current deep-level relaxation transient spectroscopy methods are presented. The temperature dependence of the capacitance–voltage characteristics of the HIT structure and deep-energy-level parameters are studied. The results of comprehensive studies by the above methods are used to determine the features of the energy-band diagram of actual HIT structures.     

Defects with deep levels in a semiconductor structure of a photoelectric converter of solar energy with an antireflection film of porous silicon

Defects in a semiconductor structure of a photoelectric converter of solar energy based on a p–n junction with an antireflection film of porous silicon on the front surface have been studied by current deeplevel transient spectroscopy. An explanation of the influence of thickness of a porous-silicon film formed by electrochemical etching on the character of transformation of defects with deep levels and efficiency of solarenergy conversion is proposed.     

Deep-Level Defects in a Photovoltaic Converter with an Antireflection Porous Silicon Film Formed by Chemical Stain Etching

Technical Physics Letters - Defects in the semiconductor structure of a photovoltaic converter (PVC) with a p–n junction and antireflection film of porous silicon manufactured using chemical...     

Apparatus for determining parameters of semiconductor structures by magnetic quantum effects and admittance spectroscopy

A universal combined apparatus is described, which allows investigations of magnetic quantum effects in 3D and 2D semiconductor structures under the influence of optical and microwave radiation on samples in the Faraday and Voight geometries and the recording of the derivatives of the transmission and reflection coefficients of the radiation power under smooth changes in the quantizing magnetic field in a wide temperature range of a studied sample. The vacuum cell of a Janis CCS-400/204N helium cryostat, which is included in the apparatus, has two cold demountable CaF₂ windows that serve for probing IR radiations with different wavelengths. The apparatus provides the determination of the following characteristics: the concentration and g-factor of free charge carriers (FCCs) in semiconductor structures from Shubnikov-De Haas (SDH) oscillation periods and from the positions of the peaks of nonlinear spin-resonance curves; the mobility and relaxation time of a FCC pulse, from the cyclotron-resonance curves with an accuracy of 0.5–1%; and the concentration profiles of FCCs and the parameters of electrically active electron levels and deep centers, using the admittance spectroscopy method.     

An investigation of current-flow mechanisms in thin rubrene wafers prepared by the vapor transport method

Optical transmission spectrum and temperature dependence of the current–voltage characteristics of a plane-parallel rubrene wafer prepared by the vapor transport method have been investigated. The band gap is determined from the optical transmission spectrum. It is established that the current–voltage characteristics can be explained within the framework of the model of space-charge-limited currents. The current-flow processes are significantly affected by traps.     

External Quantum Efficiency of Bifacial HIT Solar Cells

Semiconductors - It is shown that the use of both sides of solar cells created with the heterojunction technology makes possible an increase in the solar-cell efficiency. The difference in...