Based on simulation results and accompanying analysis, we suggest a thyristor-type ESD protection device structure suitable for implementation in standard CMOS processes to reduce the parasitic capacitances added to the input nodes, which is very important in CMOS RF ICs. We compare DC breakdown characteristics of the suggested device to those of a conventional NMOS protection device to show the benefits of using the suggested device for ESD protection. The characteristic improvements are demonstrated and the corresponding mechanisms are explained based on simulations. Structure dependencies are also examined to define the optimal structure. AC simulation results are introduced to estimate the magnitude of reduction in the added parasitic capacitance when using the suggested device for ESD protection. The analysis shows a possibility of reducing the added parasitic capacitance down to about 1/45 of that resulting with a conventional NMOS protection transistor, while maintaining robustness against ESD.
Jin-Young Choi was born in Seoul, Korea in 1956. He received the B.S. degree in electrical engineering from the Seoul National University, Korea, in 1979, and the M.S. and Ph.D. degrees in electrical engineering from the University of Florida, USA, in 1986 and 1991, respectively. In 1991, he joined Samsung Electronics Memory Division, Korea, where he was engaged in high-speed SRAM development. In 1992, he moved to the Hongik University, Jochiwon, Korea, where he is now an associate professor. His recent research interests include the high-frequency modeling of CMOS devices, CMOS RF circuit design, and analysis & design for ESD protection.
Woo Suk Yang was born in Seoul, Korea in 1957. He received the B.S. degree in electrical engineering from the Seoul National University, Korea, in 1979, and the Ph.D. degree in electrical and computer engineering from the North Calorina State University, USA, in 1990. His doctorial research was in the area of signal processing. In 1990, he joined LG Electronics Co. Korea. In 1991, he moved to the Hongik University, Jochiwon, Korea, where he is now a professor. His recent research interests include the high-frequency modeling and various topics in signal processing area.
Dongmin Kim was born in Korea in 1956. He received the B.S. and M.S. degrees in electrical engineering from the Seoul National University, Korea, in 1979 and 1984, respectively and the Ph.D. degree in ECE from the University of Michigan, USA, in 1996. Now, he is an assistant professor of the Hongik University, Jochiwon, Korea. His recent research interests include circuit design and analysis.
Youngju Kim was born in Seoul, Korea in 1957. He received the B.S. and M.S. degrees in electrical engineering from the Seoul National University, Korea in 1980 and 1985, respectively and the Ph.D. degree in electrical engineering from the Polytechnic University of New York, USA, in 1995, respectively. In 1996, he joined the Hongik University, Jochiwon, Korea, where he is now an assistance professor. His recent research interests include the RF circuit design and LIN wireless systems.
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