On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon

Semiconductors - Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid...     

Thin-Film Nanotechnology for Power Sources

Russian Engineering Research - Thin-film vacuum technology permits the creation of new electrode materials on the basis of a flexible carbon matrix with a highly developed surface. Supercapacitor...     

Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates

Technical Physics Letters - A new method for epitaxial growth of cadmium sulfide (CdS) films in the metastable cubic phase by atomic-layer deposition on silicon substrates with a buffer layer of...     

A CVD Diamond-Based Photodetector for the Visible and Near-IR Spectral Range

Technical Physics Letters - A photodetector for the visible and near-IR spectral range has been created on the basis of a chemical- vapor-deposited diamond modulation-doped with boron. The detected...     

Electrospark Dispersion of Metal Nanopowder

The production of electrically conducting metal nanopowder by electrospark dispersion in liquid dielectric is considered, in the case with a significant overvoltage in the discharge gap between the electrodes. An experimental apparatus with an air gap that creates an overvoltage at the working spark gap is developed. The two gaps split the voltage on capacitor discharge.     

A method for the construction of an ultra-operator in complex processing of remote monitoring information

A method of synthesizing a complex processing ultra-operator for diverse information that makes it possible to assure that the inverse problem of analysis is well-posed is developed. An example of an implementation of the method in search and rescue operations under complex natural weather conditions perfomed by means of pilotless aircraft is considered.     

Models for vector data representation and nontraditional transformation in a residual-class system

Mathematical principles are considered for advanced metrological support technology on the basis of finite-field theory. It is shown that models can be constructed for the measurement and processing of the incoming data that most closely reflect the essence and the specific features of certain experiments involving complicated technology. __________ Translated from Izmeritel’naya Tekhnika, No. 3, pp. 15–20, March, 2007.     

Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer

A new approach is described, according to which the use of a thin silicon carbide (SiC) interlayer ensures the suppression of cracking and the simultaneous release of elastic strain in gallium nitride (GaN) epilayers grown by hydride-chloride vapor-phase epitaxy (HVPE) on 1.5-inch Si(111) substrates. Using this method, 20-μm-thick GaN epilayers have been grown by HVPE on Si substrates with AlN (300 nm) and SiC (100 nm) interlayers. A high quality of the obtained GaN epilayers is confirmed by the photoluminescence spectra, where an exciton band with hv_max = 3.45 eV and a half-width (FWHM) of 68 meV is observed at 77 K, as well as by the X-ray rocking curves exhibiting GaN(0002) reflections with a half-width of ω_? = 600 arc sec.     

Kinetics of the Initial Stage of Crystallization at a Spatially Inhomogeneous Temperature Distribution

The initial stage of crystallization in a glass whose composition is close to the Na₂O · 2CaO · 3SiO₂stoichiometry is experimentally and theoretically investigated under spatially inhomogeneous temperature conditions. It is shown that the crystallization of this glass in an inhomogeneous temperature field is described by the nonlinear thermal conductivity equation similar to the equation accounting for the propagation of a burning front.