Sub-50-nm physical gate length CMOS technology and beyond usingsteep halo

Sub-50-nm CMOS devices are investigated using steep halo and shallow source/drain extensions. By using a high-ramp-rate spike annealing (HRR-SA) process and high-dose halo, 45-nm CMOS devices are fabricated with drive currents of 650 and 300 μA/μm for an off current of less than 10 nA/μm at 1.2 V with T_ox^inv =2.5 nm. For an off current less than 300 nA/μm, 33-nm pMOSFETs have a high drive current of 400 uA/μm. Short-channel effect and reverse short-channel effect are suppressed simultaneously by using the HRR-SA process to activate a source/drain extension (SDE) after forming a deep source/drain (S/D). This process sequence is defined as a reverse-order S/D (R-S/D) formation. By using this formation, 24-nm nMOSFETs are achieved with a high drive current of 800 μA/μm for an off current of less than 300 μA/μm at 1.2 V. This high drive current might be a result of a steep halo structure reducing the spreading resistance of source/drain extensions     

Design optimization of tall tubular lead/acid cells based on an analysis of the reaction distribution

In order to estimate the discharge performance of tall lead/acid cells (with tubular positives), changes in current and potential distributions with discharge progress were calculated with a computer on the basis of plate resistance and the current—potential—time relationship between small facing parts of positive and negative plates. The taller the cell, the larger the voltage drop along the plates. Thus, the discharge time became shorter despite a large amount of available active mass remaining in the bottom part of the plates.Various current-collector designs were evaluated, e.g., one with varying resistance at each height; a side conductor placed along the plates and connected to them at the top, centre and bottom, etc. Results revealed an optimum collector design with which the maximum discharge capacity could be obtained. Furthermore, it was shown that the side conductor markedly improved the discharge performance because the active mass near the connecting parts was appreciably used.     

A 3-V, 2%-mW multibit current-mode ΣΔ DAC with 100 dBdynamic range

The area ratio of analog to digital for mixed-mode chip has been inversely proportional to the process design rule for a given dynamic range objective, in contradiction to the LSI trend. This paper presents a design approach to realize a high degree of size reduction with process design rules for analog circuitry and a signal processing architecture for digital circuitry. A five-level current-mode ΣΔ digital-to-analog converter (DAC) system reveals full scale total harmonic: distortion plus noise (THD+N) of -90 dB and dynamic-range of 100 dB at 3 V (low power of 22 mW). Analog-area down-scaling can be accomplished by this architecture to be 1.09 mm², using 0.6-μm double-poly double-metal (DPDM) CMOS. For the digital filter, a pipeline instruction sequence with multiplierless architecture also gives small area of 1.98 mm²     

Discharge behaviour of electrodeposited PbO2 and Pb electrodes

The discharge behaviour of electrodeposited lead dioxide and lead electrodes was investigated under various conditions; the surfaces of the discharged electrodes were observed with a scanning electron microscope. Both the positive and negative electrodes were passivated by a covering of deposited lead sulphate crystals. The amount of lead sulphate required for passivation depended on the size of the crystals.     

Co-crosslinking blend of incompatible polymers VI: Poly(vinyl chloride) toughened with polyethylene via a co-crosslinking technique

A binary blend which consists of two incompatible polymers such as poly(vinyl chloride) and polyethylene has been performed through a partial co-crosslinking reaction with peroxide to give a co-crosslinked blend with a uniform dispersion of small polyethylene particles and with an improved mechanical property. The results are obtained through the formation of a co-crosslinked product which acts as a potential solid phase dispersant as well as a well-bonded reinforcing interlayer on polyethylene particles uniformly dispersed in poly(vinyl chloride) matrix. The resulting blends (PVC/PE=10/90 wt) give carbon spherules of 0.5 to 1m diameter through pressure-carbonization at 650° C for 1 h.     

PbTiO3–PbO–SiO2 Glass-Ceramic Thin Film by a Sol–Gel Process

PbTiO₃(PT)-PbO-SiO₂ glass-ceramic thin films were pro-duced by a sol-gel process. The crystallization of PT oc-curred at ∼700°C and was higher than that in PT-PbO-B₂ O₃ sol-gel glass-ceramics. A pinhole-free thin film was obtained by a rapid thermal annealing process when the designed glass-forming phase content in the thin film was >24 vol%. The measured dielectric constants of the films fairly agreed with the predicted values, based on a parallel mixing model. The dielectric constant was 219 and the di-electric loss was 0.04 in the 0.6PT-0.4(PbO-SiO₂) film that was fired at 700°C.     

New amphoteric surfactants containing a phosphoric acid group: I. syntheses and physicochemical properties of sodium 2-(n-2-hydroxyalkyl-n-methylamino)ethyl hydrogen phosphate

A series of new amphoteric surfactants having a phosphoric acid group, a tertiary amino group and a 2-hydroxyalkyl group, sodium 2-(N-2-hydroxyalkyl-N-methyl-amino)ethyl hydrogen phosphates (alkyl: n-tetradecyl, n-hexadecyl, n-octadecyl), were prepared by an addition reaction of 1,2-epoxyalkanes to N-methylaminoethanol, followed by the introduction of a phosphoric acid group and neutralization with sodium hydroxide. The structures of these compounds were confirmed by spectroscopy and elemental analysis. The solubility in solvents, Krafft point, surface tension, critical micelle concentration (CMC), occupation area of the molecule at the surface of aqueous solutions and foaming power were measured. It was shown that a 2-hydroxyethyl group in a long alkyl chain seemed to behave as a hydrophobic part.     

The degradation of polystyrene during extrusion

An investigation was made of the magnitude and mechanism of shear degradation of a narrow distribution, high molecular weight (M_w = 670,000) polystyrene. An Instron rheometer was used to perform the extrusion at temperatures from 164° to 250°C. The change in molecular weight distribution was studied by gel permeation chromatography. The maximum shear stress employed was 5.83 kg/cm². It was found that degradation could be induced at high stress at temperatures of 50°C lower than degradation of polystyrene would occur exclusively due to thermal forces. An activation energy for the degradation, calculated at constant shear rate, was +20.2 kcal/mole. The direction and magnitude of this value are consistent with degradation induced through a mechanical reduced activation for thermal degradation.