共面转换液晶显示器中获得对比度高于1:600的新技术

薄膜晶体管液晶电视(TFT-LCD TV)因为具有薄、轻、紧凑和可随意放置的特点，已经占据了大部分电视机市场。除了这些物理特性以外，最重要的特性是已具有了良好像质的对比度。为了将对比度提高到1：600以上，对偏振片膜、背光源板、滤色片树脂、电极锥角和摩擦条件等都进行了研究。优化的背光板组合，光滑的电极锥角和摩擦方法的控制是提高对比度的主要控制因素。应用新开发的滤色片树脂，对获得高对比度最为有效。     

Design of thermophoretic probe for precise particle sampling

We proposed a design methodology for improved thermophoretic probes that can sample particles with high spatial resolution. A bending vibration analysis for the instantaneous motion of a probe has been done together with direct observation of the probe motion and flow disturbance for systematic study of the effect of different designs on particle sampling. Direct observation of the motion of thermophoretic sampling probes revealed that the probe with a low stiffness would result in inaccurate particle sampling. Based on these, the thermophoretic sampling probe was modified to minimize probe vibration and flow disturbance and this modified design was confirmed to sample particles with higher spatial resolution than the original one by examining transmission electron microscope (TEM) images of particles collected in a flame.     

Sensitivity analysis of ion implanted silicon wafers after rapid thermal annealing

In this study, we have investigated sensitivities of the ion implanted silicon wafers processed by rapid thermal annealing (RTA), which can reveal the variation of sheet resistance as a function of annealing temperature as well as implantation parameters. All the wafers were sequentially implanted by the arsenic or phosphorous implantations at 40, 80, and 100 keV with the dose level of 10¹⁴ to 2 × 10¹⁶ ions/cm². Rapid thermal annealing was carried out for 10 s by the infrared irradiation at a temperature between 850 and 1150°C in the nitrogen ambient. The activated wafer was characterized by the measurements of the sheet resistance and its uniformity mapping. The values of sensitivities are determined from the curve fitting of the experimental data to the fitting equation of correlation between the sheet resistance and process variables. From the sensitivity values and the deviation of sheet resistance, the optimum process conditions minimizing the effects of straggle in process parameters are obtained. As a result, a strong dependence of the sensitivity on the process variables, especially annealing temperatures and dose levels is also found. From the sensitivity analysis of the 10 s RTA process, the optimum values for the implant dose and annealing temperature are found to be in the range of 10¹⁶ ions/cm² and 1050-1100°C, respectively. The sensitivity analysis of sheet resistance will provide valuable data for accurate activation process, offering a guideline for dose monitoring and calibration of ion implantation process.     

A Novel Body-tied Silicon-On-Insulator(SOI) n-channel Metal-Oxide-Semiconductor Field-Effect Transistor with Grounded Body Electrode

A novel body-tied silicon-on-insulator(SOI) n-channel metal-oxide-semiconductor field-effect transistor with grounded body electrode named GBSOI nMOSFET has been developed by wafer bonding and etch-back technology. It has no floating body effect such as kink phenomena on the drain current curves, single-transistor latch and drain current overshoot inherent in a normal SOI device with floating body. We have characterized the interface trap density, kink phenomena on the drain current (I_DS-V_DS) curves, substrate resistance effect on the I_DS-V_DS curves, subthreshold current characteristics and single transistor latch of these transistors. We have confirmed that the GBSOI structure is suitable for high-speed and low-voltage VLSI circuits.     

Room temperature CO and H2 sensing with carbon nanoparticles

We report on a shell-shaped carbon nanoparticle (SCNP)-based gas sensor that reversibly detects reducing gas molecules such as CO and H(2) at room temperature both in air and inert atmosphere. Crystalline SCNPs were synthesized by laser-assisted reactions in pure acetylene gas flow, chemically treated to obtain well-dispersed SCNPs and then patterned on a substrate by the ion-induced focusing method. Our chemically functionalized SCNP-based gas sensor works for low concentrations of CO and H(2) at room temperature even without Pd or Pt catalysts commonly used for splitting H(2) molecules into reactive H atoms, while metal oxide gas sensors and bare carbon-nanotube-based gas sensors for sensing CO and H(2) molecules can operate only at elevated temperatures. A pristine SCNP-based gas sensor was also examined to prove the role of functional groups formed on the surface of functionalized SCNPs. A pristine SCNP gas sensor showed no response to reducing gases at room temperature but a significant response at elevated temperature, indicating a different sensing mechanism from a chemically functionalized SCNP sensor.     

Analysis of hot-strip rolling by a penalty rigid-viscoplastic finite element method

A new approach to the analysis of hot-strip rolling is presented. This approach is based on the rigid-viscoplastic finite element method and employs a penalty algorithm to relax the contact boundary condition for the determination of the stress distributions at the roll-strip interface. The approach is applied to the investigation of the various aspects of deformation mechanics in hot-strip rolling, with particular emphasis given to examining the effect of the coefficient of friction. An investigation is also carried out for a multi-pass rolling problem in which the strip is subject to simultaneous rolling at the two different roll gaps.