一种PD雷达动目标模拟与微波测控系统

介绍了一种基于PC／104总线，具有GPIB程控功能，采用无内部微波源体制，通过在雷达载频上调制多普勒频率模型目标速度信息，延迟雷达发射机触发脉冲模拟目标距离信息并具有微波功率精确定标与衰减功能的PD雷达动目标模拟与微波测控系统。     

CSTN-LCD用铬版清洗效果的改善

利用铬版清洗机对CSTN-LCD用铬版进行清洗处理,分析了清洗过程中出现的铬层脱落现象,铬层脱落与轴向喷射压力和水平切力密切相关,通过调整转速和喷射压力探索了安全使用条件:在转速不超过1000r/min,喷射压力低于0.5×105Pa的情况下使用铬版清洗机进行清洗是相对安全的。同时采用预清洗处理的方法满足清洁要求,使换线时间由平均3h缩短到平均1h以内,年产能提高270000片。     

Structural and chemical analysis of C : H,O /Si : H,O multilayers deposited by reactive RF sputtering

Hydro-oxygenated carbon (C : H,O) and silicon (Si : H,O) layers are deposited by RF sputtering of graphite and silicon targets in a mixture of argon, hydrogen and oxygen gases. C : H,O/Si : H,O/C : H,O/Si : H,O... multilayers are obtained by sequential deposition of C : H,O and Si : H,O layers. Infrared (IR) spectroscopy, Grazing Incidence X-ray Diffraction (GIXD) and X-ray Photoelectron Spectroscopy (XPS) techniques have been used to analyse the formed multilayers. The IR spectra made on as deposited structures show the presence of Si---C, Si---O, C---O, Si---H, C---H and C=C bonds. This result indicates an interfacial reactivity between Si : H,O and C : H,O layers. The latter result is confirmed by the XPS measurements. After an annealing at 850°c for two hours under argon atmosphere (10^-3 mbar), the concentration of the Si---C bonds is increased by a factor two while the Si---H and C---H bonds disappear complet The GIXD measurements show that the multilayers are amorphous when annealed below 750°C, and they are crystallized with the formation of the α-SiC phase if the heat treatment is made at 850°C. The mean size of the microcrystallites is 50 Å about.     

医用聚氯乙烯材料的表面光接枝改性

研究了在不排氧氛围下 ,紫外光照射 ,以二苯甲酮 (BP)为光引发剂 ,甲基丙烯酸缩水甘油酯(GMA)在医用聚氯乙烯 (PVC)薄膜表面的气相接枝聚合。探讨了反应条件对接枝结果的影响 ,并用正交法指出了影响因素的显著性。用傅立叶红外 (FT- IR)、水接触角作为接枝改性结果的表征。FT- IR谱图表明 GMA已接枝到 PVC膜表面。水接触角由接枝前的 78°下降到 5 4°     

Improvement of RCA transistor using RTA annealing after theformation of interfacial oxide

A polysilicon emitter RCA transistor (an ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) is presented which can operate at 77 K for the first time. An ultra-thin (1.5 nm) interfacial oxide layer is grown deliberately between polysilicon and silicon emitter using RCA oxidation and excellent device stability is obtained after rapid thermal annealing (RTA) treatment in nitrogen atmosphere. The RCA transistor exhibits good electrical performance at very low temperature for an emitter area of 3 × 8 μm². The maximum toggle frequency of a 1:2 static divider is 1.2 GHz and 732 MHz at 300 K and 77 K, respectively     

A One-Dimensional Nonlocal Damage-Plasticity Model for Ductile Materials

This paper presents a new 1-D non-local damage-plasticity deformation model for ductile materials. It uses the thermodynamic framework described in Houlsby and Puzrin (2000) and holds, nevertheless, some similarities with Lemaitre’s (1971) approach. A 1D finite element (FE) model of a bar fixed at one end and loaded in tension at the other end is introduced. This simple model demonstrates how the approach can be implemented within the finite element framework, and that it is capable of capturing both the pre-peak hardening and post-peak softening (generally responsible for models instability) due to damage-induced stiffness and strength reduction characteristic of ductile materials. It is also shown that the approach has further advantages of achieving some degree of mesh independence, and of being able to capture deformation size effects. Finally, it is illustrated how the model permits the calculation of essential work of rupture (EWR), i.e. the specific energy per unit cross-sectional area that is needed to cause tensile failure of a specimen.     

S盒设计中的一种新准则

本文提出了强扩散准则,强雪崩效应以及扩散效应的逼近优势等相关概念,给出了差分均匀性与强k阶扩散准则之间的相互关系,利用给出的设计准则改进了Rijndael密码的S盒。     

Influence of the preparation conditions on the size and morphology of nanocrystalline lanthanum orthoferrite

Nanocrystalline LaFeO₃ is prepared by the dehydration of coprecipitated lanthanum and iron(III) hydroxides. It is shown that the behavior of the samples during heating and the size distribution of LaFeO₃ nanocrystals can be considerably different depending on the scheme used for coprecipitation of lanthanum and iron hydroxides; independently of the method employed for coprecipitation of the initial compounds, sintering of the samples at 950°C leads to the formation of lanthanum orthoferrite crystals up to 100 nm in size.