A 322 MHz random-cycle embedded DRAM with high-accuracy sensing and tuning

A 16 Mb embedded DRAM macro in a fully CMOS logic compatible 90 nm process with a low noise core architecture and a high-accuracy post-fabrication tuning scheme has been developed. Based on the proposed techniques, 61% improvement of the sensing accuracy is realized. Even with the smallest 5 fF/cell capacitance, a 322 MHz random-cycle access while 32 ms data retention time which contributes to save the data retention power down to 60 /spl mu/W are achieved.     

Photolytic crosslinking of poly(p-hydroxystyrene)

Light-induced crosslinking of poly(p-hydroxystyrene) (PPHS) is significantly enhanced by O₂. This was evidenced by molar mass (light scattering measurements) and by gel content determinations which were performed on various polymer samples before and after continuous irradiation at λ_inc = 254 nm. The following mechanism was elucidated with the aid of flash photolysis studies: Crosslinking in the absence or presence of O₂ is mainly due to the combination of phenoxyl type radicals. In the absence of O₂ the latter are exclusively formed by O? H bond cleavage of singlet excited phenolic groups. Triplet excited phenolic groups which are also formed do not deactivate via O? H bond cleavage but react very effectively with O₂. This reaction leads to the formation of HO and additional phenoxyl type radicals. All Commercial and most laboratory-prepared PPHS samples contain chemically bound impurities of quinoid nature. On the basis of results performed with model compounds of low molar mass, it is concluded that triplet excited quinoid groups react effectively with phenolic groups forming phenoxyl type radicals and that they are quite unreactive with respect to the abstraction of alphatic hydrogen atoms. Irradiation of PPHS at λ_inc = 254 nm causes the formation of quinoid groups which absorb strongly at this wavelength. Light absorption by these groups becomes a determining factor with respect to photochemical alteration in the course of further irradiation.     

Electrical conductivity and domain structure in ferroelastic Tl2SeO4

We have carried out the optical observation, electrical conductivity and ²⁰⁵Tl NMR measurements, and subsequently investigated the origin of the large conductivity above ferroelastic phase transition temperature T_c (=661 K) on the basis of the domain structure and the crystal structure. Electrical conductivity exhibits the discontinuous increase around T_c with increasing temperature and becomes approximately 5 × 10⁻³ S m⁻¹ above T_c. Moreover, from the ²⁰⁵Tl NMR measurements, it is found that mobile Tl ions exist above T_c. Furthermore, from the analysis of the domain structure based on the crystal structure in the low-temperature ferroelastic phase, it is also found that the anomalously large fluctuations of SeO₄ tetrahedrons exist above T_c. It is deduced from these results that the high electrical conductivity above T_c is caused by the mobile Tl ions closely related to the anomalously large fluctuations of SeO₄ tetrahedrons accompanied by the ferroelastic phase transition.     

Radiation damage of SiC Schottky diodes by electron irradiation

The impact of radiation damage on the device performance of 4H-SiC Schottky diodes, which are irradiated at room temperature with 2-MeV electrons is studied. After irradiation the reverse current increases, while the forward current and the capacitance decrease with barrier height and carrier density. The decrease of the barrier height is mainly responsible for the increase of the reverse current, while the decrease of the forward current for a high fluence is caused by the increase of the resistance in the bulk of the crystal. Although no electron capture levels are observed before irradiation, three electron capture levels (E₁, E₂, and E₃) are induced after irradiation. It is noted that the decrease in carrier density is partly caused by the contribution of non-observed electron capture level in the DLT spectrum, which compensates the free carriers.     

Integrated reproduction of human motion components by motion copying system

Currently, the development of leading‐edge technology for recording and loading human motion on the basis of haptic information is required in the fields of manufacturing and human support. Human movement is an assembly of motion components. Since human movements should be supported by a robot in real time, it is necessary to integrate the motion components that were saved earlier. Once such motion integration is realized, future technology for use in daily human life can be developed. This paper proposes the integrated reproduction of the decomposed components of human motion by using a motion copying system. This system is the key technology for the realization of the acquisition, saving, and reproduction of real‐world haptic information. By using the proposed method, it is possible not only to achieve expert skill acquisition, skill transfer to robots, and power assist for each motion component, but also to open up new areas of applications. © 2012 Wiley Periodicals, Inc. Electr Eng Jpn, 181(1): 28–35, 2012; Published online in Wiley Online Library (wileyonlinelibrary.com). DOI 10.1002/eej.21263     

Synthesis of sulfonated organic–inorganic hybrids through the radical copolymerization of vinyl sulfonate esters and vinyl trialkoxysilanes

Novel organic–inorganic hybrids with sulfonic acid groups were prepared using random copolymers composed of vinyl sulfonate esters and vinyl trialkoxysilanes. Five vinyl sulfonate esters with different substituent groups were employed as protecting monomers for the production of the poly(vinyl sulfonic acid) component, and three vinyl trialkoxysilanes were used as cross-linkable monomers. Free radical and reversible addition-fragmentation chain transfer (RAFT) copolymerizations were performed for the production of random copolymers with two different functional groups. The selective deprotection of the sulfonate esters of the copolymers proceeded smoothly and resulted in the formation of copolymers with lithium vinyl sulfonate units and cross-linkable trialkoxysilane units. The co-condensation of the trialkoxysilane moieties in the deprotected copolymers with cross-linkers yielded transparent hybrid films that contained lithium sulfonate groups without aromatic rings or ester linkages.     

Control of Thermal Conductance of Peltier Device Using Heat Disturbance Observer

In industry, temperature control and heat flow control are now applied in many thermal devices, including Peltier devices, which facilitates heat transfer by the Peltier effect. Generally, temperature control compensates for heat flowing from the external environment, while heat actively flows into the system during heat flow control. Thus, temperature control and heat flow control differ from each other. However, there have been no detailed discussions of a thermal control process in which the thermal conductance control ranges between 0 and ∞. This paper focuses on thermal conductance control and the construction of a thermal conductance control system for a Peltier device using a heat disturbance observer. When using the thermal conductance controller, the thermal conductance control is altered and the system becomes thermally compliant with the external environment. This paper also presents experimental results that confirm the validity of the proposed control system. © 2013 Wiley Periodicals, Inc. Electr Eng Jpn, 185(4): 44–52, 2013; Published online in Wiley Online Library ( wileyonlinelibrary.com ). DOI 10.1002/eej.22411