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1.
Antimony triselenide (Sb2Se3) nanoflake-based nitrogen dioxide (NO2) sensors exhibit a progressive bifunctional gas-sensing performance, with a rapid alarm for hazardous highly concentrated gases, and an advanced memory-type function for low-concentration (<1 ppm) monitoring repeated under potentially fatal exposure. Rectangular and cuboid shaped Sb2Se3 nanoflakes, comprising van der Waals planes with large surface areas and covalent bond planes with small areas, can rapidly detect a wide range of NO2 gas concentrations from 0.1 to 100 ppm. These Sb2Se3 nanoflakes are found to be suitable for physisorption-based gas sensing owing to their anisotropic quasi-2D crystal structure with extremely enlarged van der Waals planes, where they are humidity-insensitive and consequently exhibit an extremely stable baseline current. The Sb2Se3 nanoflake sensor exhibits a room-temperature/low-voltage operation, which is noticeable owing to its low energy consumption and rapid response even under a NO2 gas flow of only 1 ppm. As a result, the Sb2Se3 nanoflake sensor is suitable for the development of a rapid alarm system. Furthermore, the persistent gas-sensing conductivity of the sensor with a slow decaying current can enable the development of a progressive memory-type sensor that retains the previous signal under irregular gas injection at low concentrations.  相似文献   
2.
We present a distribution‐free tabular cumulative sum chart for monitoring the variability of an autocorrelated process. A quantity known as the asymptotic variance parameter is employed as a measure of the variability, and a distribution‐free tabular cumulative sum chart is applied to variance estimates calculated from batches of nonoverlapping samples. The proposed chart is applicable to a stationary process with a general marginal distribution and a general autocorrelation structure. It also determines control limits analytically without trial‐and‐error simulations. The performance of the proposed chart is tested on stationary processes with both normal and nonnormal marginals with various autocorrelation structures. Copyright © 2014 John Wiley & Sons, Ltd.  相似文献   
3.
Safety-critical software systems such as certain nuclear instrumentation and control (NI&C) systems should be developed with thorough verification. This study presents a method of software requirement verification with a case study for a nuclear power plant (NPP) protection system. The verification introduces colored petri net (CPN) for system modeling and prototype verification system (PVS) for mathematical verification. In order to aid flow-through from modeling by CPN to mathematical proof by PVS, an information extractor from CPN models has been developed in this paper. In order to convert the extracted information to the PVS specification language, a translator has also been developed. This combined method has been applied to the functional requirements of the Wolsong NPP Shut Down System #2 (SDS2); logical properties of the requirements were verified. Through this research, guidelines and a tool support for the use of formal methods have been developed for application to NI&C software verification.  相似文献   
4.
Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high‐density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas‐phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E‐beam patterns, we evaluated and controlled selectivity loss and nonuniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.  相似文献   
5.
Disturbance-observer (DOB)-based controller design is one of the most popular methods in the field of motion control. In this paper, the generalized disturbance compensation framework, named the robust internal-loop compensator (RIC) is introduced and an advanced design method of a DOB is proposed based on the RIC. The mixed sensitivity optimization problem, which is the main issue of DOB design, is also solved through the parametrization of the DOB in the RIC framework. Differently from conventional methods, the Q-filter is separated from the mixed sensitivity optimization problem and a systematic design law for the DOB is proposed. This guarantees the robustness and optimality of the DOB and enables the design for unstable plants.  相似文献   
6.
The leakage mechanism in p+/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions  相似文献   
7.
Norton NBD 200 silicon nitride ceramics were implanted with sodium to a dose of 7.0×1015cm-2 at 72 keV (1 at% peak sodium content at 100 nm). The sodium-implanted samples were further implanted with aluminium to 7.3×1015cm-2 at 87 keV (1 at% peak aluminium content at 100 nm). The implanted and unimplanted samples were oxidized in 1 atm dry oxygen at 1100 and 1300°C for 2–6 h. Profilometry and scanning electron microscopy measurements indicated that sodium implantation led to up to a two-fold increase in the oxidation rate of silicon nitride. The sodium effect was effectively neutralized when aluminium was co-implanted. The opposite effects of sodium and aluminium on the oxidation resistance of silicon nitride can be attributed to their different roles in modifying the structure and properties of the oxide formed. This revised version was published online in November 2006 with corrections to the Cover Date.  相似文献   
8.
9.
When a horizontal homogeneous solid is melted from below, convection can be induced in a thermally unstable melt layer. In this study the onset of buoyancy-driven convection during time-dependent melting is investigated by using similarly transformed disturbance equations. The critical Rayleigh numbers based on the melt-layer thickness are found numerically for various conditions. For small superheats, the present predictions approach the well known results of classical Rayleigh-Bénard problems, that is, critical Rayleigh numbers are located between 1,296 and 1,708, regardless of the Prandtl number. However, for high superheats the critical Rayleigh number increases with an increase in phase change rate but with decrease in Prandtl number.  相似文献   
10.
Complementary effects of solid lubricants in the automotive brake lining   总被引:5,自引:0,他引:5  
An experimental investigation was carried out to examine the tribological behavior of NAO (non-asbestos organic) type brake linings containing different volume ratios of graphite and antimony trisulfide (Sb2S3). A scale dynamometer was used for friction tests and particular emphases were given to the effect of applied pressure, sliding speed, and temperature on the coefficient of friction according to the relative amounts of the two solid lubricants. Results showed that the brake linings with both solid lubricants exhibited better friction stability and less speed sensitivity than the friction materials containing a single solid lubricant. In particular, the brake lining containing higher concentrations of graphite showed better fade resistance than others during high-temperature friction test.  相似文献   
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