Hopping and optical absorption of electrons in nano-porous crystal 12CaO·7Al2O3

Recently it has been discovered that a nano-porous main group oxide 12CaO·7Al₂O₃ (C12A7) can be converted from a wide-gap insulator to a good transparent conductor. Using ab initio modelling we explain good conductivity of this material by very small barriers for hopping of localised electrons between neighbouring positive cages. We show that optical absorption of C12A7 in infrared region and at energies higher than 2.7 eV is due to inter-cage and intra-cage electron transitions, respectively. The proposed mechanisms can be useful in further search for conducting transparent media.     

Synthesis, Characterization and Crystal Structure of Quaternary Complex of Gadolinium （Ⅲ）

Ａｎｕｍｂｅｒｏｆｌａｎｔｈａｎｉｄｅｔｅｒｎａｒｙｃｏｍｐｌｅｘｅｓｃｏｎ ｔａｉｎｉｎｇｈｅｔｅｒｏｃｙｃｌｉｃａｍｉｎｅｓｈａｖｅｂｅｅｎｒｅｐｏｒｔｅｄｓｉｎｃｅ1960 [1] .Ｉｎｒｅｃｅｎｔｙｅａｒｓｍｕｃｈａｔｔｅｎｔｉｏｎｈａｓｂｅｅｎｐａｉｄｔｏｑｕａｔｅｒｎａｒｙｃｏｍｐｌｅｘｅｓｏｆｌａｎｔｈａｎｉｄｅｓｂｅｃａｕｓｅｏｆｉｎ ｔｅｒｅｓｔｉｎｇｓｔｒｕｃｔｕｒｅ ,ｃｏｏｒｄｉｎａｔｉｏｎｍｏｄｅ ,ｃｏｍｐｅｔｉｔｉｏｎｒｅ ａｃｔｉｏｎａｎｄｐｒｏｐｅｒｔｙ[2～ 9] .ＥＳＲｃａｎｅ…     

Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs

We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO₃(ZnO)_m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 10⁵. The field-effect mobility increased from ∼1 to ∼10 cm² (V s)⁻¹ as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds.     

A novel method of suppressing the inrush current of transformers by using a series‐connected voltage‐source PWM converter

This paper proposes a novel method of suppressing the inrush current of transformers. A small‐rated voltage‐source PWM converter is connected in series to the transformers through a matching transformer. As the connected PWM converter serves as a resistor for the source current, no inrush phenomena occurs. The required rating of the PWM converter, which serves as the damping resistor for the inrush phenomena, is 1/400 that of the main transformers in single‐phase circuits. In three‐phase circuits, it is 1/900. The basic principle of the proposed method is discussed. Digital computer simulation is implemented to confirm the validity and excellent practicability of the proposed method using the PSCAD/EMTDC. A prototype experimental model is constructed and tested. The experimental results demonstrate that the proposed method can perfectly suppress the inrush phenomena. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 157(4): 56–65, 2006; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20174     

Fabrication of Nonadditive Mica Ceramics by Hot Isostatic Processing

Powder compacts of synthetic mica (fluorphlogopite) encapsulated in a boro–silicate glass tube were isostatically hot–pressed in a Roy–Tuttle–type pressure vessel. Synthetic mica was sintered to a density of 2.60 g/cm³ (91.2% of theoretical density) without additives under 98 MPa of water at 800°C for 45 min.     

Calibration Curve for Quantitative Analysis of the Monoclinic-Tetragonal ZrO2 System by X-Ray Diffraction

A nonlinear calibration curve for volume fraction vs integrated intensity ratio was obtained for the monoclinic-tetragonal ZrO² system by using X-ray powder pattern-fitting and pattern-decomposition techniques. The empirical equation agrees well with the theoretical one. By using this equation, the deviation from linearity (6.8% maximum) resulting from the intensity difference of corresponding reflections of the two phases can be estimated quite accurately.     

Built-in Nanostructures in Transparent Oxides for Novel Photonic and Electronic Functions Materials

We review distinct photonic/electronic properties originating from built-in nanostructures in transparent oxide-based materials, emphasizing potential of nanostructures hidden in crystal structure. Materials focused on are oxychalcogenides LaCuOCh (Ch = chalcogen ion) and homologous oxides InGaO₃(ZnO)_m(m = integer) having naturally formed multi-quantum well structures and 12CaO· 7Al₂O₃ (C12A7) with a unique nanoporous structure. Novel functions and devices arising from the built-in nanostructure are: (1) modulation doping of positive holes and room-temperature stable exciton in LaCuOCh, (2) high-performance transparent field-effect transistor fabricated in InGaO₃(ZnO)₅ epitaxial thin films, and (3) conversion of insulator to persistent electronic conductor by carrier doping in 12CaO·7Al₂O₃ (C12A7).