Characteristics of planar diodes based on heavily doped GaAs/AlAs superlattices in the terahertz frequency region

Characteristics of ohmic InGaAs contacts in planar diodes based on semiconductor superlattices with a small-area active region (1–10 μm²) are studied. The diodes were formed on the basis of short (18 or 30 periods) heavily doped (10¹⁸ cm⁻³) GaAs/AlAs superlattices with a miniband width of 24.4 meV. The reduced resistance of the ohmic contact was equal to 2×10⁻⁷ Ω cm² at room temperature. It is shown that the properties of fabricated planar diodes make it possible to use these diodes later on in semiconductor devices that operate in the terahertz frequency region in a wide temperature range (4–300 K). __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 9, 2004, pp. 1141–1146. Original Russian Text Copyright ? 2004 by Pavel’ev, Demarina, Koshurinov, Vasil’ev, Semenova, Zhukov, Ustinov.     

Photoemission of polarized electrons from InAlGaAs/GaAs superlattices with minimum conduction band offsets

Photoemission of polarized electrons from heterostructures based on InAlGaAs/GaAs superlattices with minimum conduction-band offsets is investigated. The comparison of the excitation energy dependence of the photoemission polarization degree with the calculated spectra make it possible to determine the polarization losses at different stages of the photoemission. A maximum polarization of P = 91% and a quantum yield of 0.14% are close to the best results obtained for photocathodes on the basis of strained semiconductor superlattices.     

Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures

Cyclotron resonance is measured in solitary type-II InAs-AlGaSb quantum wells grown by molecular-beam epitaxy under various growth conditions. Quantum oscillations observed in the cyclotron resonance spectra in InAs-GaSb samples are attributed to scattering by a short-range potential due to roughness of the heterointerface. A new method based on measurement of the cyclotron resonance spectra is proposed for assessing the quality of the heterointerface. Fiz. Tekh. Poluprovodn. 31, 1246–1248 (October 1997)     

Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region

Lasers based on InAs/InGaAs quantum dots grown on metamorphic (In,Ga,Al)As layers deposited by MBE on GaAs substrates exhibited emission near 1.5 μm with a differential quantum efficiency of about 50%. The narrow-stripe lasers operate in a single transverse mode and withstand continuous current density above 20 kA cm^?2 without significant degradation. A maximum continuous-wave output power of 220 mW is obtained. Neither current nor beam filamentation was observed up to the highest pumping levels.     

Optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices

The optical properties of heterostructures comprising InAs/InGaAsN quantum wells in strain-compensated GaAsN/InGaAsN superlattices have been studied. It is demonstrated that, using such superlattices of various design and thickness and with additional InAs monolayer spacers, it is possible to control the wavelength of room-temperature emission from InGaAsN quantum wells within 1.3–1.6 μm without deteriorating the output radiation characteristics, which opens additional prospects for the development of lasers on GaAs substrates for telecommunication applications.     

Tellurium clusters in channels of the porous silica ZSM-11

The distribution and structure of tellurium nanoclusters synthesized in crystal channels of the porous silica ZSM-11 are investigated using the maximum-entropy method and the Rietveld analysis. It is shown that the intercalated tellurium atoms are arranged in channels of the ZSM-11 zeolite not randomly but in the form of scraps of infinite chains similar to those observed in massive tellurium. The distances between the nearest neighbor tellurium atoms vary in the range 2.53(4)–2.70(3) ?. The clusters Te₄ are formed at the intersections of channels in the structure. These clusters have the form of distorted tetrahedra in which the tellurium atoms are separated by distances of 2.53(4) and 2.90(4) ?. Original Russian Text ? A.E. Lapshin, Yu.F. Shepelev, Yu.I. Smolin, E.A. Vasil’eva, 2008, published in Fizika i Khimiya Stekla.     

Radioecological state of the territory and water area in Guba Andreev

The radioecological conditions which developed on the territory over the long operating time of the object of the naval fleet in Guba Andreev are described. The results of an analysis of the sources of the real and potential danger and measures to prevent dangerous effects for the environment and the workers at the time remediation work is performed are discussed. __________ Translated from Atomnaya énergiya, Vol. 101, No. 1, pp. 49–55, July, 2006.     

On the existence of monodromy groups of fuchsian systems on Riemann's sphere with unipotent genrators

In this paper we consider the following problem: For what choice of the (p+1)-tuple of conjugacy classesC ₁,…,C _p+1 in GL(n,?),p≥2, do there exist irreducible (p+1)-tuples of matricesM _j ∈C _j such that the productM ₁,…,M _p+1 equals identity? We present the necessary and sufficient conditions for the existence of such tuples in the case whereM _j are unipotent.     

Impedance spectroscopy of ultrafine-grain SnO2 ceramics with a variable grain size

The impedance spectra of nanocrystalline SnO₂ ceramics with an average grain size d ranging from 3 to 43 nm were investigated in the frequency range 1–10⁶ Hz at temperatures from 25 to 300°C in a dry oxygen atmosphere. Analysis of the experimental data by the graphoanalytical method made it possible to separate the contributions of grain bulk and grain boundaries to the conductivity. It is shown that the samples investigated can be arbitrarily divided into two groups with respect to the character of their conductivity. For the samples with an average grain size d < 25 nm, the charge transfer processes are almost completely determined by the grain boundaries. In samples with a larger grain size, the contribution of grain bulk to the conductivity is comparable with that of grain boundaries.     

Machine learning in control of functional electrical stimulationsystems for locomotion

Two machine learning techniques were evaluated for automatic design of a rule-based control of functional electrical stimulation (FES) for locomotion of spinal cord injured humans. The task was to learn the invariant characteristics of the relationship between sensory information and the FES-control signal by using off-line supervised training. Sensory signals were recorded using pressure sensors installed in the insoles of a subject's shoes and goniometers attached across the joints of the affected leg. The FES-control consisted of pulses corresponding to time intervals when the subject pressed on the manual push-button to deliver the stimulation during FES-assisted ambulation. The machine learning techniques used were the adaptive logic network (ALN) and the inductive learning algorithm (IL). Results to date suggest that, given the same training data, the IL learned faster than the ALN while both performed the test rapidly. The generalization was estimated by measuring the test errors and it was better with an ALN, especially if past points were used to reflect the time dimension. Both techniques were able to predict future stimulation events. An advantage of the ALN over the IL was that ALN's can be retrained with new data without losing previously collected knowledge. The advantages of the IL over the ALN were that the IL produces small, explicit, comprehensible trees and that the relative importance of each sensory contribution can be quantified