Progressive NO2 Sensors with Rapid Alarm and Persistent Memory-Type Responses for Wide-Range Sensing Using Antimony Triselenide Nanoflakes

Antimony triselenide (Sb₂Se₃) nanoflake-based nitrogen dioxide (NO₂) sensors exhibit a progressive bifunctional gas-sensing performance, with a rapid alarm for hazardous highly concentrated gases, and an advanced memory-type function for low-concentration (<1 ppm) monitoring repeated under potentially fatal exposure. Rectangular and cuboid shaped Sb₂Se₃ nanoflakes, comprising van der Waals planes with large surface areas and covalent bond planes with small areas, can rapidly detect a wide range of NO₂ gas concentrations from 0.1 to 100 ppm. These Sb₂Se₃ nanoflakes are found to be suitable for physisorption-based gas sensing owing to their anisotropic quasi-2D crystal structure with extremely enlarged van der Waals planes, where they are humidity-insensitive and consequently exhibit an extremely stable baseline current. The Sb₂Se₃ nanoflake sensor exhibits a room-temperature/low-voltage operation, which is noticeable owing to its low energy consumption and rapid response even under a NO₂ gas flow of only 1 ppm. As a result, the Sb₂Se₃ nanoflake sensor is suitable for the development of a rapid alarm system. Furthermore, the persistent gas-sensing conductivity of the sensor with a slow decaying current can enable the development of a progressive memory-type sensor that retains the previous signal under irregular gas injection at low concentrations.     

A Novel Self-Organizing Approach to Automatic Traffic Light Management System for Road Traffic Network

Wireless Personal Communications - Traffic network is basically a “network of networks” consisting of mainly two types of networks: road network and a travel network. Due to drastic...     

Experimental investigation of Co and Fe-Doped CuO nanostructured electrode material for remarkable electrochemical performance

The current research work presents a facile and cost–effective co-precipitation method to prepare doped (Co & Fe) CuO and undoped CuO nanostructures without usage of any type of surfactant or capping agents. The structural analysis reveals monoclinic crystal structure of synthesized pure CuO and doped-CuO nanostructures. The effect of different morphologies on the performance of supercapacitors has been found in CV (cyclic voltammetry) and GCD (galvanic charge discharge) investigations. The specific capacitances have been obtained 156 (±5) Fg^?1, 168(±5) Fg^?1 and 186 (±5) Fg^?1 for CuO, Co-doped CuO and Fe-doped CuO electrodes, respectively at scan rate of 5 mVs^?1, while it is found to be 114 (±5) Fg^?1, 136 (±5) Fg^?1 and 170 (±5) Fg^?1 for CuO, Co–CuO and Fe–CuO, respectively at 0.5 Ag^-1 as calculated from the GCD. The super capacitive performance of the Fe–CuO nanorods is mainly attributed to the synergism that evolves between CuO and Fe metal ion. The Fe-doped CuO with its nanorods like morphology provides superior specific capacitance value and excellent cyclic stability among all studied nanostructured electrodes. Consequently, it motivates to the use of Fe-doped CuO nanostructures as electrode material in the next generation energy storage devices.     

Identifying crop water stress using deep learning models

Neural Computing and Applications - The identification of water stress is a major challenge for timely and effective irrigation to ensure global food security and sustainable agriculture. Several...     

Benchmarks of simple, generic, shaped plates for validation oflow-frequency electromagnetic computational codes

The validation of low-frequency measurements and electromagnetic (EM) scattering computations for several simple, generic shapes, such as an equilateral-triangular plate, an equilateral-triangular plate with a concentric equilateral-triangular hole, and diamond- and hexagonal-shaped plates, is discussed. The plates were constructed from a thin aluminium sheet with a thickness of 0.08 cm. EM scattering by the planar plates was measured in the experimental test range (ETR) facility of NASA Langley Research Center. The dimensions of the plates were selected such that, over the frequency range of interest, the dimensions were in the range of λ₀ to 3λ₀. In addition, the triangular plate with a triangular hole was selected to study internal-hole resonances     

The effect of biphasic waveform tilt in transvenous atrial defibrillation

Atrial defibrillation can be accomplished using low energy shocks and transvenous catheters. The biphasic waveform tilt required to achieve optimal atrial defibrillation thresholds (ADFTs) is, however, not known. The effect of single capacitor biphasic waveform tilt modification on ADFT was assessed in 20 patients. Following AF induction the defibrillation pulses were delivered between the catheters positioned in the coronary sinus and the right atrium. The single capacitor biphasic waveform shocks, delivered over the same pathways, consisted of 65% tilt (65/65 biphasic waveform) to produce an overall tilt of 88%, or 50% tilt (50/50 biphasic waveform) to produce an overall tilt of 75%. Although 65/65 biphasic waveform delivers more energy, the shorter duration 50/50 biphasic waveform reduced stored energy ADFT 21%, from 1.34 +/- 0.82 J with 65/65 biphasic to 1.06 +/- 0.81 J. These differences were not statistically significant. Nine patients had lower ADFT with 50/50 biphasic waveform while five patients had lower ADFT with 65/65 biphasic waveform. Equivalent reduction in ADFT was seen in the remaining six patients. The ADFT was 0.83 +/- 0.65 J when both tilts were considered. In conclusion, biphasic waveform tilt modification may affect the ADFT in an individual patient. The optimal biphasic waveform for ADFT is not known.     

Fast RCS computation over a frequency band using method of momentsin conjunction with asymptotic waveform evaluation technique

The method of moments (MoM) in conjunction with the asymptotic waveform evaluation (AWE) technique is applied to obtain the radar cross section (RCS) of an arbitrarily shaped three-dimensional (3-D) perfect electric conductor (PEC) body over a frequency band. The electric field integral equation (EFIE) is solved using the MoM to obtain the equivalent surface current on the PEC body. In the AWE technique, the equivalent surface current is expanded in a Taylor's series around a frequency in the desired frequency band. The Taylor series coefficients are then matched via the Pade approximation to a rational function. Using the rational function, the surface current is obtained at any frequency within the frequency range, which is in turn used to calculate the RCS of the 3-D PEC body. A rational function approximation is also obtained using the model-based parameter estimation (MBPE) method and compared with the Pade approximation. Numerical results for a square plate, a cube, and a sphere are presented over a frequency bandwidth. Good agreement between the AWE and the exact solution over the bandwidth is observed     

An EKV-based high voltage MOSFET model with improved mobility and drift model

An EKV-based high voltage MOSFET model is presented. The intrinsic channel model is derived based on the charge based EKV-formalism. An improved mobility model is used for the modeling of the intrinsic channel to improve the DC characteristics. The model uses second order dependence on the gate bias and an extra parameter for the smoothening of the saturation voltage of the intrinsic drain. An improved drift model [Chauhan YS, Anghel C, Krummenacher F, Ionescu AM, Declercq M, Gillon R, et al. A highly scalable high voltage MOSFET model. In: IEEE European solid-state device research conference (ESSDERC), September 2006. p. 270–3; Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11–12):1801–13] is used for the modeling of the drift region, which gives smoother transition on output characteristics and also models well the quasi-saturation region of high voltage MOSFETs. First, the model is validated on the numerical device simulation of the VDMOS transistor and then, on the measured characteristics of the SOI-LDMOS transistor. The accuracy of the model is better than our previous model [Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11–12):1801–13] especially in the quasi-saturation region of output characteristics.     

Study of automatic text summarization approaches in different languages

Artificial Intelligence Review - Nowadays we see huge amount of information is available on both, online and offline sources. For single topic we see hundreds of articles are available, containing...