VO2/GaAs异质结的制备及其光电特性研究

采用直流磁控溅射和后退火氧化工艺在p型GaAs单晶衬底上成功制备了n-VO_2/pGaAs异质结,研究了不同退火温度和退火时间对VO_2/GaAs异质结性能的影响,并分析其结晶取向、化学组分、膜层质量以及光电特性。结果表明,在退火时间2 h和退火温度693 K下能得到相变性能最佳的VO_2薄膜,相变前后电阻变化约2个数量级。VO_2/GaAs异质结在308 K、318 K和328 K温度下具有较好的整流特性,对应温度下的阈值跳变电压分别为6.9 V、6.6 V和6.2 V,该结果为基于VO_2相变特性的异质结光电器件的设计与应用提供了可行性。     

Special Issue on the Internet of Things (ISCC 2020)

Journal of Signal Processing Systems -     

The Central Lyapunov Limit Theorem and the Property of the Asymptotic Normality of the Sequence of Stable Polynomial Coefficients

Journal of Computer and Systems Sciences International - It is shown that the Lyapunov theorem on the distribution properties of the sum of random variables with different distribution densities...     

Mammogram pectoral muscle removal and classification using histo-sigmoid based ROI clustering and SDNN

Multimedia Tools and Applications - Mammograms are the images used by radiologists to diagnose breast cancer. Breast cancer is one of the most common cancers in women. The early detection of breast...     

Technological Aspects of Synthesizing Ceramic Coatings by Flow-Through Micro-Arc Oxidation

Refractories and Industrial Ceramics - The paper introduces a promising technology for utilizing a traditional scheme for implementing a flow-through micro-arc oxidation method to restore localized...     

Effective prediction and resource allocation method (EPRAM) in fog computing environment for smart healthcare system

Multimedia Tools and Applications - Recently, many concepts in technology has been changed. According to the digital transformation trends, Internet of Things (IoT) represents an interested...