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本文基于热力学平衡计算,首次给出以DMZn和H2Se为源,MOVPE生长ZnSe的相图.文中讨论了ZnSe单一凝聚相区的范围,以及可能出现ZnSe(s)+Zn(s)或ZnSe(s)+Se(l)两种双凝聚相区的条件. 相似文献
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提出一个以TMGa、TMAl、TMIn和NH3为源,用MOVPE方法生长GaxAlyIn1-x-yN四元合金的准热力学模型.该模型假设四元合金是由氨和Ⅲ族元素之间反应合成的,其特点是考虑了NH3的分解效率,并用N、H、Ga、Al及In的摩尔分数代替惯用的分压来表示质量守衡方程.计算了各种生长条件对于与GaN晶格匹配的GaxAlyIn1-x-yN四元合金与注入反应室的Ⅲ族金属有机化合物之间关系的影响.计算表明,几乎所有达到生长表面的Al和Ga都并入到GaxAlyIn1-x-yN四元合金中,而In则富集在气相.为增强铟的并入,应采用低的生长温度,高的Ⅴ/Ⅲ比,氮载气而且须要设法降低到达生长界面前氨的分解. 相似文献
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本文对MOCVD生长Hg1-xCdxTe进行了热力学分析.所用的起始原材料为Hg、DM-Cd和R2Te.计算结果一方面表明CdTe优先并入倾向使得在通常的DAG工艺中x值非常不易控制.另一方面表明即使在Hg存在的情况下,也可以沉积几乎纯的CdTe,这对实现IMP工艺非常有利,计算结果还表明II/VI比对HgCdTe的组分控制起着关键性的作用.在DAG工艺中,较低的II/VI比可以改善对x值的控制能力,LMP-DAG工艺是降低II/VI比的较好途径.本文还计算了生长温度和反应室压力对固相组分的影响以及LMP 相似文献
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用两相液相外延法生长 In_(1-x)Ga_xAs_yP_(1-y)/InP DH外延片,以 AZ1350i胶模掩蔽,在(001)DH片上,用Br_2:HBr:H_2O=1:25:50作腐蚀剂,沿<110>方向刻槽,研制成两种发射波长为1.35μm In_(1-x)Ga_xAs_yP_(1-y)/InP化学腐蚀腔面激光器.单面化学腐蚀腔面激光器的阈电流密度与常规解理腔面器件相比,未见增高.而双面化学腐蚀腔面激光器则有较高的阈电流密度. 相似文献
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Quasi-Thermodynamic Model of MOVPE of InAlN 总被引:1,自引:0,他引:1
Group - nitrides are very importantmaterials,which are applied to the fabrication ofgreen,blue and ultraviolet light emitting diodes(L EDs) and laser diodes(L Ds) [1 ] .Inx Al1 - xN alloy is a kind of promising material for Ga N- based... 相似文献
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A quasi-thermodynamic model of MOVPE growth of InxAl1-xN alloy with TMAl,TMIn and ammonia as sources has been proposed. In this improved model,the effect of low decomposition rate of ammonia has been considered and the number of moles is used to express the mass conservation constraints of element N,H,Al and In. It is assumed that the alloy is synthesized by the reactions between ammonia and group Ⅲ elements. The results show that it is more difficult to grow the InxAl1-xN alloy,especially for the InxAl1-xN lattice matched the GaN. In order to enhance the incorporation of indium into InA1N,we should use the lower growth temperature,optimized input Ⅴ/Ⅲ ratio and high nitrogen fraction in the carrier gas. In addition,the decomposed fraction of ammonia should be reduced. Indium droplets would be deposited if the growth conditions have not been selected properly. 相似文献