Cerebral microbleeds and cognitive decline in a hemodialysis patient: Case report and review of literature

Cerebral microbleeds (CMBs) are small hemosiderin deposits indicative of prior cerebral microscopic hemorrhage and previously thought to be clinically silent. Recent population‐based cross‐sectional studies and prospective longitudinal cohort studies have revealed association between CMB and cognitive dysfunction. In the general population, CMBs are associated with age, hypertension, and cerebral amyloid angiopathy. In the chronic kidney disease (CKD) population, diminished estimated glomerular filtration rate has been found to be an independent risk factor for CMB, raising the possibility that a uremic milieu may predispose to microbleeds. In the end‐stage renal disease (ESRD) population on hemodialysis, the incidence of microbleeds is significantly higher compared with a control group without history of CKD or stroke. We present an ESRD patient on chronic hemodialysis with a history of gradual cognitive decline and progressive CMBs. Through this case and literature review, we illustrate the need to develop detection and prediction models to treat this frequent development in ESRD patients.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

ADI-FDTD Method With Fourth Order Accuracy in Time

This letter presents an unconditionally stable alternating direction implicit finite-difference time-domain (ADI-FDTD) method with fourth order accuracy in time. Analytical proof of unconditional stability and detailed analysis of numerical dispersion are presented. Compared to second order ADI-FDTD and six-steps SS-FDTD, the fourth order ADI-FDTD generally achieves lower phase velocity error for sufficiently fine mesh. Using finer mesh gridding also reduces the phase velocity error floor, which dictates the accuracy limit due to spatial discretization errors when the time step size is reduced further.     

Integrated Personal Mobility Architecture: A Complete Personal Mobility Solution

The high expectations and demand for users to access the Internet from anywhere at anytime has made user mobility an important part of the design and development of the next generation mobile communications and computing. Traditionally user mobility has been divided into two areas: Terminal Mobility and Personal Mobility. In recent years terminal mobility has focused on the movement of the terminal and developed extensions to IP protocols such as Mobile IP. In contrast, personal mobility has only received limited attention, and is somewhat lagging behind. This research has either focussed on personal mobility in communications or personalisation of operating environments. As a result, to date no framework for providing true personal mobility has emerged. In this paper, we introduce a new personal mobility framework called IPMoA (Integrated Personal Mobility Architecture), which integrates both aspects of personal mobility to provide a complete personal mobility solution, and illustrate the viability of this approach through a proof-of-concept implementation.     

孔径法测量铜带残余应力的试验研究

介绍了用于薄板残余应力测量的新方法——孔径法,该方法是通过测量冲孔直径的变化来间接求出各方向的残余应力;文中详细阐述了残余应力的标定方法;由于可针对不同材料建立了被测材料的平均应力(σ_l)与被测板材宽度(B)、厚度(H)以及冲孔后直径变化率(△D_i/D)之间的数学模型,因而使薄板残余应力测量变得简便而经济;此外还对该方法的分辨率与测量精度进行了实验、计算与分析。     

Starting up the Sherritt Zinc Pressure Leach Process at Hudson Bay

The first commercial application of the Sherritt two-stage zinc pressure leach process commenced operation at the Hudson Bay Mining and Smelting Company metallurgical complex in Flin Flon, Manitoba (Canada), on July 2, 1993. The start-up was relatively smooth, and full design rate for the plant was achieved by September 12, 1993. Since that time, zinc extraction in the zinc pressure leach plant has consistently been in excess of 98%, and production has continued to exceed expectations. The successful operation of the Hudson Bay plant represents a significant advancement of zinc processing technology, especially with respect to meeting the environmental challenge faced by zinc plants today.     

IS-78: LonWorks® goes into hazardous areas

This paper introduces LonWorks technology, intrinsic safety and how the two are combined in the IS-78 physical channel which enables networks to be taken into hazardous areas. The capabilities of the physical channel are described, together with some applications in which it has been used.     

Monte Carlo simulation of grain growth and recrystallization in polycrystalline materials

The prediction and control of metal grain structures during processing have been major objectives of materials science. However, methodologies that are accurate and can be easily generalized to a variety of processing conditions have been difficult to formulate due to the complexity of the grain interactions. A novel Monte Carlo-based approach that explicitly incorporates these interactions has been developed to simulate the microstructural evolution driven by the minimization of grain boundary energy and lattice defect density. The applicability of this procedure has been demonstrated by the good correspondence between simulation results and experimental observations. This article reviews recent advances in the application of this technique to the investigation of a variety of phenomena, including normal and abnormal grain growth as well as static and dynamic recrystallization.