Microwave hybrid fast sintering of red clay ceramics

This work aimed to examine the performance of the hybrid sintering of clay ceramic in a microwave furnace, compared to the sintering process in a conventional furnace. The raw materials were subjected to X-ray fluorescence, loss on ignition (LOI), X-ray diffraction, particle size distribution, real specific mass, and thermogravimetric analyses. The red clay ceramic mass was prepared, extruded, pre-sintered in a conventional furnace at 600°C/60 min, and sintered at temperatures between 700 °C and 1100 °C. The sintering conventional (resistive oven) was carried out for 60 min with a heating rate of 10°C/min. In the microwave furnace, the sintering times were 5, 10, and 15 min, with a heating rate of 50°C/min, with a sintering chamber coated with silicon carbide (susceptor). The sintered specimens were characterized according to linear shrinkage, water absorption, apparent porosity, apparent specific mass, X-ray diffraction, Raman spectroscopy analysis, spectroscopy analysis in the ultraviolet and visible regions, microhardness, and scanning electron microscopy. The results showed that microwave sintering promoted an increase in the microhardness and apparent specific mass, and reduction in water absorption and apparent porosity values, due to greater densification in the microstructure. The best results occurred for specimens sintered at 1100°C.     

Fixed-order H∞ compensator design

A method is presented for the construction of fixed-order compensators to provide H_∞ norm constraint for linear control systems with exogenous disturbances. The method is based on the celebrated bounded-real lemma that predicates the H_∞ norm constraint via a Riccati inequality. The synthesis of fixed-order controllers whose dimensions are less than the order of a given plant, is demonstrated by a set of sufficient conditions along with a numerical algorithm.     

A small-angle X-ray scattering study of powder compaction

This work demonstrated a novel and potentially important application of two-dimensional small-angle X-ray scattering (2D-SAXS) to investigate powder compaction. SAXS from powder compacts of three materials commonly used for pharmaceutical tabletting exhibited azimuthal variations, with stronger intensity in the direction of the applied compaction force, relative to the transverse direction. This implied that compaction of a (macroscopic) powder could also produce changes on the molecular (nanometre) scale, which can be probed by 2D-SAXS. Two possible explanations for this effect were suggested. A combination of anisometric (i.e. elongated or flattened) granules with anisotropic morphologies could result in azimuthal variation in X-ray scattering due to granule orientation. It is expected that this mechanism would require relatively low packing density, so may operate during die filling. Granule re-orientation appeared less likely at higher packing densities and compaction pressures, however. Under these conditions, the changes in the 2D-SAXS patterns would be consistent with the powder granules becoming relatively flattened in the compression direction, with corresponding changes in their nano-scale morphology. The magnitude of this effect was found to vary between the materials used and increased with compaction pressure. This suggested that 2D-SAXS studies could provide useful information on force-transmission within a compressed powder. Further analysis of the data also suggested differences in the compaction mechanisms (i.e. granule re-orientation, deformation or fragmentation) between the materials studied.     

Sheldon H. White (1928-2005).

Sheldon "Shep" Harold White, one of developmental psychology's most distinguished scholars, died on March 17, 2005, at the age of 76. He is perhaps best remembered for his sharp intellect, generous spirit, good humor, and warm compassion. Shep's principal work lay in three intermeshed areas: children's learning and cognitive development, social programs and policies, and the history of developmental psychology. Shep White is sorely missed by his family and friends, and countless children have unknowingly benefited from his research, scholarship, and contributions to public policy. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

On the determination of boundaries to manipulator workspaces

The accumulation of two independent, broadly applicable formulations for determining the boundary to manipulator workspaces, presented elsewhere, are compared in this paper. Insights gained from one method are used to explain behavior exhibited in the other. Results are also compared and validated. A numerical formulation based on continuation methods is used to map curves that are on the boundary of a manipulator workspace. Analytical criteria based on row rank deficiency criteria of the manipulator's analytical Jacobian are used to map a family of one-dimensional solution curves on the boundary. The other formulation, based on a similar rank-deficiency criteria, yields analytic boundaries parametrized in terms of surface patches on the boundary. Results concerning the applicability of the numerical method to open- and closed-loop systems are compared with those limited to the open-loop for the analytical method. Conclusions regarding the behavior of the manipulator on geometric entities characterized by singular curves, higher-order bifurcation points, and surfaces inside the workspace are drawn. Applicability of both methods and their limitations are also addressed.     

Top-down logic design with pass-transistor cells and efficientsynthesiser

A pass-transistor based cell library containing only two types of cells is designed and a corresponding logic/circuit synthesiser developed for logic mapping of any combinational circuit. The proposed design has better performance than the recently proposed lean integration with pass transistors (LEAP) cell library. Furthermore, the modified LEAP cell library can be easily migrated to a new process technology due to the smaller number of cells     

Novel technique for SiO2 formed by liquid-phasedeposition for low-temperature processed polysilicon TFT

A technique for SiO₂ formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO₂ film with a lower P-etch rate shows a dense structure. LPD SiO₂ also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO ₂ as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs)