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排序方式: 共有947条查询结果,搜索用时 27 毫秒
1.
Shogo Mamada Naoyuki Yaguchi Masanori Hansaka Masafumi Yamato Hirohisa Yoshida 《应用聚合物科学杂志》2015,132(15)
This study was addressed to the influence of an electric field strength applied at fabrication process and matrix properties, such as the dielectric constant and the Young's modulus, on “pseudo‐1‐3 piezoelectric ceramic/polymer composite” in order to further enhance the piezoelectricity of that. The pseudo‐1‐3 piezoelectric ceramic/polymer composite consists of linearly ordered piezoelectric ceramic particles in polymer material. Silicone gel, silicone rubber, urethane rubber, and poly‐methyl‐methacrylate, which exhibit different dielectric constants and Young's modulus, were used as matrices to evaluate the matrix influence. The piezoelectricity of the pseudo‐1‐3 piezoelectric ceramic/polymer composite was evaluated using the piezoelectric strain constant d33. The d33 is one of the indices of the piezoelectric properties for piezoelectric materials. As a result, it was confirmed that d33 of the pseudo‐1‐3 piezoelectric ceramic/polymer composite increased with the increase of the electric filed strength applied at fabrication process, though, it reached a constant value at a certain strength value. Further it was confirmed that dielectric constant of the matrix had a small influence on d33 of the pseudo‐1‐3 piezoelectric ceramic/polymer composite, however, in case of matrix of lower Young's modulus, d33 was increase. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015 , 132, 41817. 相似文献
2.
Yamada T. Kawakami Y. Nakano T. Mutoh N. Orihara K. Teranishi N. 《Electron Devices, IEEE Transactions on》1997,44(10):1580-1587
This study reports an optimum design for a two-phase charge-coupled device (CCD) and limitations on its driving voltage reduction. The two-phase CCD to be used as a horizontal-CCD (H-CCD) in a CCD image sensor requires low-voltage and high-speed operation. Reducing the driving voltage, however, may induce potential pockets in the channel under the inter-electrode gaps which results in a fatal decrease in charge-transfer efficiency. In this case it is necessary to optimize the CCD design to be free of pocket generation. For this requirement, we conducted two-dimensional (2-D) device simulations for the two-phase CCD, whose potential barriers are formed by boron ion-implantation. Our simulations indicated that the edge position of the potential barrier region and the dose of boron-ion implantation would be important parameters for controlling the size of potential pockets. At an optimum edge position and a boron dose, the minimum driving voltage appears to be reducible to 1.1 V. Characteristics of potential pockets and methods of their suppression are also discussed 相似文献
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Wakabayashi R. Kawakami H. Sato G. Amano T. Suzuki Y. 《Vehicular Technology, IEEE Transactions on》1998,47(2):392-405
A VHF omnidirectional radio range (VOR) is a navigation aid radio beacon facility, which provides aircraft with azimuth information relative to the VOR station in question as the origin. In Japan, two types of VOR-the conventional type (referred to as a CVOR) and the Doppler type (referred to as a DVOR)-are currently in use. An element known as the Alford loop antenna (ALA), which changes the loading reactance, is used for the VOR because the horizontally polarized wave and nondirectivity in the horizontal plane are preferred. A VOR antenna consists of a carrier antenna and a sideband antenna-an aircraft receives separate signals from these two antennas and compares them to obtain azimuth information. The mutual coupling between the elements forming the carrier and the sideband antenna affects the directivity of the single elements, resulting in errors in azimuth information. With the mutual coupling between the antenna elements being taken into consideration, a quantitative calculation was made by using the moment method-the results of the calculation made it clear that a loading reactance value of -320 Ω is better to make not mutually coupled elements nondirectional while a loading reactance value of -600 Ω is optimum to minimize the azimuth error of a CVOR 相似文献
6.
An outbreak of Cryptosporidiosis occurred over three months in a British Columbia community, peaking in December 1990. Results of the case-control study and illness surveys support the hypothesis that transmission occurred in a public children's pool at the local recreation centre. Analysis using lab-confirmed cases revealed a matched odds ratio of 4.5 [95% CI 0.97, 20.83], and using clinical cases an unmatched odds ratio of 12.8 [95% CI 3.68, 46.77], associated with swimming in the children's pool within two weeks prior to onset of illness. Other risk factors were not significant. Attack rates in various groups of children's pool users ranged from 8% to 78%. The children's pool was closed for steam cleaning and disinfection. Unusually frequent defecations including liquid stools had occurred before and during the outbreak. Improvements were instituted for removal of feces and superchlorination of pool water. 相似文献
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Remarkably rapid nitriding which is independent of diffusion theory based on the thermal activation process, was observed during nitriding of austenitic Fe-Ni-Cr steels containing 16 and 19 mass% chromium. Increase of the chromium content in the alloys yielded increasing thickness of the nitrided layer, i.e. the internal nitriding theory did not hold in the nitriding. No rapid nitriding was observed in steels containing less than 13 mass% chromium. Hence the limiting concentration of chromium for the rapid nitriding will lie between 13 and 16 mass% chromium. A solution to the problem of abnormalities arising during nitriding of practical austenitic stainless steels which have been investigated since 1972, has been presented experimentally by nitriding various chromium-containing steels. Based on the experimental results, the origin of the rapid nitriding is discussed in connection with the free-energy function of Cr2N and CrN to temperature. In particular, a plateau of nitrogen concentration measured in the nitrided layers leads to the conclusion that a forced nitrogen diffusion in the layer resulted in the rapid nitriding. 相似文献
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10.
Yasuo Koide T. Kawakami Masanori Murakami N. Teraguchi Y. Tomomura A. Suzuki 《Journal of Electronic Materials》1998,27(6):772-775
Schottky barrier heights (SBHs) of a variety of metals (In, Cd, Nb, Ti, W, Cu, Ag, Au, Ni, Pt, and Se) contacting to p-ZnSe
grown by a molecular beam epitaxy method were determined by analyzing capacitance-voltage (C-V) and/or current density-voltage
(J-V) curves. The SBH values of the Au and Ni contacts were determined from intersections of straight lines of the C−2-V curves to be 1.23 and 1.13 eV, respectively. The J-V calculations provided a large SBH value of 1.2 ± 0.1 eV for a variety
of metals, indicating that the Fermi-level could be pinned at the contact interface. Reduction of the SBH values to a level
lower than 0.4 eV and/or increase of doping concentrations to a level higher than 1020 cm−3 are essential to obtain an ohmic contact with contact resistivity of around 10−3 Ω·cm2. 相似文献