4D Printing of Shape Memory Materials for Textiles: Mechanism,Mathematical Modeling,and Challenges

Shape memory materials (SMMs) in 3D printing (3DP) technology garnered much attention due to their ability to respond to external stimuli, which direct this technology toward an emerging area of research, “4D printing (4DP) technology.” In contrast to classical 3D printed objects, the fourth dimension, time, allows printed objects to undergo significant changes in shape, size, or color when subjected to external stimuli. Highly precise and calibrated 4D materials, which can perform together to achieve robust 4D objects, are in great demand in various fields such as military applications, space suits, robotic systems, apparel, healthcare, sports, etc. This review, for the first time, to the best of the authors’ knowledge, focuses on recent advances in SMMs (e.g., polymers, metals, etc.) based wearable smart textiles and fashion goods. This review integrates the basic overview of 3DP technology, fabrication methods, the transition of 3DP to 4DP, the chemistry behind the fundamental working principles of 4D printed objects, materials selection for smart textiles and fashion goods. The central part summarizes the effect of major external stimuli on 4D textile materials followed by the major applications. Lastly, prospects and challenges are discussed, so that future researchers can continue the progress of this technology.     

Photon and vibration synergism on planar defects induced 2D-graphitic carbon nitride for ultrafast remediation of dyes and antibiotic ampicillin

Journal of Materials Science - Hybrid oxidation methodologies (HOMs) and active site enrichment of 2D nanocatalyst through defects induction are ubiquitously used for generating adequate reactive...     

Fabrication of Wear-Resistant Ti3AlC2/Al3Ti Hybrid Aluminum Composites by Friction Stir Processing

Metallurgical and Materials Transactions A - Hybrid nanocomposites have potential as wear-resistant materials. However, synthesizing these nanocomposites by conventional molten state methods result...     

Impact of Climate Change on Future Flood Susceptibility: an Evaluation Based on Deep Learning Algorithms and GCM Model

Floods are common and recurring natural hazards which damages is the destruction for society. Several regions of the world with different climatic conditions face the challenge of floods in different magnitudes. Here we estimate flood susceptibility based on Analytical neural network (ANN), Deep learning neural network (DLNN) and Deep boost (DB) algorithm approach. We also attempt to estimate the future rainfall scenario, using the General circulation model (GCM) with its ensemble. The Representative concentration pathway (RCP) scenario is employed for estimating the future rainfall in more an authentic way. The validation of all models was done with considering different indices and the results show that the DB model is most optimal as compared to the other models. According to the DB model, the spatial coverage of very low, low, moderate, high and very high flood prone region is 68.20%, 9.48%, 5.64%, 7.34% and 9.33% respectively. The approach and results in this research would be beneficial to take the decision in managing this natural hazard in a more efficient way.

     

Design and performance study of phase‐locked loop using fractional‐order loop filter

The present work reports the realization of an analog fractional‐order phase‐locked loop (FPLL) using a fractional capacitor. The expressions for bandwidth, capture range, and lock range of the FPLL have been derived analytically and then compared with the experimental observations using LM565 IC. It has been observed that bandwidth and capture range can be extended by using FPLL. It has also been found that FPLL can provide faster response and lower phase error at the time of switching compared to its integer‐order counterpart. Copyright © 2014 John Wiley & Sons, Ltd.     

Estimation of power density in IMPATT using different materials

ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n⁺-n-p-p⁺) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 10¹⁰ Wm^?2 and the Si-based counterpart has lowest power density of order 10⁶ Wm^?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.